Micron Technology Inc. MT29F1T08EEHAFJ4-3ITFES:A TR
- Part Number:
- MT29F1T08EEHAFJ4-3ITFES:A TR
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 7373999-MT29F1T08EEHAFJ4-3ITFES:A TR
- Description:
- Memory IC
- Datasheet:
- MT29F1T08EEHAFJ4-3ITFES:A TR
Micron Technology Inc. MT29F1T08EEHAFJ4-3ITFES:A TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29F1T08EEHAFJ4-3ITFES:A TR.
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case132-VBGA
- Operating Temperature-40°C~85°C TA
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologyFLASH - NAND
- Voltage - Supply2.5V~3.6V
- Memory Size1Tb 128G x 8
- Memory TypeNon-Volatile
- Clock Frequency333MHz
- Memory FormatFLASH
- Memory InterfaceParallel
- RoHS StatusROHS3 Compliant
MT29F1T08EEHAFJ4-3ITFES:A TR Overview
Non-Volatile is the type of memory it has. There is a Tape & Reel (TR) case available. The 132-VBGA case contains it. The chip has an 1Tb 128G x 8 memory. This device uses a FLASH-format memory, which is of mainstream design. A wide operating temperature range makes this device ideal for a variety of demanding applications. A voltage of 2.5V~3.6V can be supplied to memory ics. Its recommended mounting type is Surface Mount. It is important to note that the memory has a clock frequency rotation within the range of 333MHz.
MT29F1T08EEHAFJ4-3ITFES:A TR Features
Package / Case: 132-VBGA
MT29F1T08EEHAFJ4-3ITFES:A TR Applications
There are a lot of Micron Technology Inc.
MT29F1T08EEHAFJ4-3ITFES:A TR Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
Non-Volatile is the type of memory it has. There is a Tape & Reel (TR) case available. The 132-VBGA case contains it. The chip has an 1Tb 128G x 8 memory. This device uses a FLASH-format memory, which is of mainstream design. A wide operating temperature range makes this device ideal for a variety of demanding applications. A voltage of 2.5V~3.6V can be supplied to memory ics. Its recommended mounting type is Surface Mount. It is important to note that the memory has a clock frequency rotation within the range of 333MHz.
MT29F1T08EEHAFJ4-3ITFES:A TR Features
Package / Case: 132-VBGA
MT29F1T08EEHAFJ4-3ITFES:A TR Applications
There are a lot of Micron Technology Inc.
MT29F1T08EEHAFJ4-3ITFES:A TR Memory applications.
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
MT29F1T08EEHAFJ4-3ITFES:A TR More Descriptions
NAND Flash TLC 1T 128GX8 BGA DDP
IC FLASH 1TBIT PARALLEL 132VBGA
IC EEPROM 32K I2C 1MHZ 6WLCSP
IC FLASH 1TBIT PARALLEL 132VBGA
IC EEPROM 32K I2C 1MHZ 6WLCSP
The three parts on the right have similar specifications to MT29F1T08EEHAFJ4-3ITFES:A TR.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeClock FrequencyMemory FormatMemory InterfaceRoHS StatusSeriesSurface MountNumber of TerminationsAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Operating ModeOrganizationMemory WidthMemory DensityHeight Seated (Max)LengthWidthView Compare
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MT29F1T08EEHAFJ4-3ITFES:A TR8 WeeksSurface Mount132-VBGA-40°C~85°C TATape & Reel (TR)Active3 (168 Hours)FLASH - NAND2.5V~3.6V1Tb 128G x 8Non-Volatile333MHzFLASHParallelROHS3 Compliant----------------------
-
-Surface Mount162-VFBGA-40°C~105°C TATape & Reel (TR)Last Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2Non-Volatile533MHzFLASH, RAMParallelROHS3 CompliantAutomotive, AEC-Q100--------------------
-
16 WeeksSurface Mount130-VFBGA-40°C~85°C TATrayActive-FLASH - NAND, Mobile LPDRAM1.7V~1.95V1Gb 128M x 8 N 512M 16M x 32 LPDRAMNon-Volatile200MHzFLASH, RAMParallelRoHS Compliant-YES130LPDRAM IS ORGANISED AS 32M X 16BOTTOMNOT SPECIFIED11.8V0.65mmcompliantNOT SPECIFIEDR-PBGA-B1301.95V1.7VSYNCHRONOUS128MX881073741824 bit1mm9mm8mm
-
-Surface Mount162-VFBGA-40°C~85°C TATrayLast Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2Non-Volatile533MHzFLASH, RAMParallel----------------------
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