ISSI, Integrated Silicon Solution Inc IS42S16160G-7BI
- Part Number:
- IS42S16160G-7BI
- Manufacturer:
- ISSI, Integrated Silicon Solution Inc
- Ventron No:
- 7101232-IS42S16160G-7BI
- Description:
- 3.3V V Memory IC 8mm mm
- Datasheet:
- IS42S16160G-7BI
ISSI, Integrated Silicon Solution Inc IS42S16160G-7BI technical specifications, attributes, parameters and parts with similar specifications to ISSI, Integrated Silicon Solution Inc IS42S16160G-7BI.
- Mounting TypeSurface Mount
- Package / Case54-TFBGA
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Part StatusLast Time Buy
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations54
- ECCN CodeEAR99
- Additional FeatureAUTO/SELF REFRESH
- TechnologySDRAM
- Voltage - Supply3V~3.6V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage3.3V
- Terminal Pitch0.8mm
- JESD-30 CodeS-PBGA-B54
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)3.6V
- Power Supplies3.3V
- Supply Voltage-Min (Vsup)3V
- Memory Size256Mb 16M x 16
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency143MHz
- Supply Current-Max0.13mA
- Access Time5.4ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Organization16MX16
- Output Characteristics3-STATE
- Memory Width16
- Standby Current-Max0.004A
- Memory Density268435456 bit
- I/O TypeCOMMON
- Refresh Cycles8192
- Sequential Burst Length1248FP
- Interleaved Burst Length1248
- Height Seated (Max)1.2mm
- Length8mm
- Width8mm
- RoHS StatusROHS3 Compliant
IS42S16160G-7BI Overview
This product is manufactured by ISSI, a leading provider of integrated silicon solutions. It falls under the Memory category. The product has a surface mount mounting type and comes in a 54-TFBGA package/case. The operating temperature range for this product is between -40°C and 85°C with TA status. Currently, it is in the last time buy part status. The memory size measures 256Mb, consisting of 16M x 16 channels. The clock frequency stands at 143MHz, while the memory format utilizes DRAM technology. The output characteristics are based on a 3-state design, and the memory density amounts to 268435456 bits. Lastly, the product features an 8mm width.
IS42S16160G-7BI Features
Package / Case: 54-TFBGA
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
IS42S16160G-7BI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS42S16160G-7BI Memory applications.
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
This product is manufactured by ISSI, a leading provider of integrated silicon solutions. It falls under the Memory category. The product has a surface mount mounting type and comes in a 54-TFBGA package/case. The operating temperature range for this product is between -40°C and 85°C with TA status. Currently, it is in the last time buy part status. The memory size measures 256Mb, consisting of 16M x 16 channels. The clock frequency stands at 143MHz, while the memory format utilizes DRAM technology. The output characteristics are based on a 3-state design, and the memory density amounts to 268435456 bits. Lastly, the product features an 8mm width.
IS42S16160G-7BI Features
Package / Case: 54-TFBGA
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
IS42S16160G-7BI Applications
There are a lot of ISSI, Integrated Silicon Solution Inc
IS42S16160G-7BI Memory applications.
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
IS42S16160G-7BI More Descriptions
DRAM Chip SDRAM 128M-Bit 8Mx16 3.3V 54-Pin TSOP-II Tube
DRAM Chip SDRAM 256Mbit 16Mx16 3.3V 54-Pin TFBGA
DDR SDRAM, 16Mx16, 3.3V, 8K, BGA-54,RoHSISSI SCT
IC DRAM 256MBIT PARALLEL 54TFBGA
DRAM Chip SDRAM 256Mbit 16Mx16 3.3V 54-Pin TFBGA
DDR SDRAM, 16Mx16, 3.3V, 8K, BGA-54,RoHSISSI SCT
IC DRAM 256MBIT PARALLEL 54TFBGA
The three parts on the right have similar specifications to IS42S16160G-7BI.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchJESD-30 CodeQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencySupply Current-MaxAccess TimeMemory FormatMemory InterfaceOrganizationOutput CharacteristicsMemory WidthStandby Current-MaxMemory DensityI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthHeight Seated (Max)LengthWidthRoHS StatusMountNumber of PinsJESD-609 CodePbfree CodeTerminal FinishHTS CodePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountOperating Supply VoltageNominal Supply CurrentData Bus WidthAddress Bus WidthDensityRadiation HardeningSupplier Device PackageMax Operating TemperatureMin Operating TemperatureFrequencyInterfaceMax Supply VoltageMin Supply VoltageMax FrequencyView Compare
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IS42S16160G-7BISurface Mount54-TFBGAYES-40°C~85°C TATrayLast Time Buy3 (168 Hours)54EAR99AUTO/SELF REFRESHSDRAM3V~3.6VBOTTOM13.3V0.8mmS-PBGA-B54Not Qualified3.6V3.3V3V256Mb 16M x 161VolatileSYNCHRONOUS143MHz0.13mA5.4nsDRAMParallel16MX163-STATE160.004A268435456 bitCOMMON81921248FP12481.2mm8mm8mmROHS3 Compliant------------------------
-
Surface Mount50-TSOP (0.400, 10.16mm Width)--40°C~85°C TATrayObsolete3 (168 Hours)50EAR99AUTO/SELF REFRESHSDRAM3V~3.6VDUAL13.3V0.8mm--3.6V-3V16Mb 1M x 161Volatile-166MHz-5.5nsDRAMParallel1MX163-STATE160.002A-COMMON20481248FP12481.2mm20.95mm-RoHS CompliantSurface Mount50e3yesMATTE TIN8542.32.00.0226040503.3V110mA16b12b16 MbNo--------
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Surface Mount90-LFBGAYES-40°C~85°C TATape & Reel (TR)Discontinued3 (168 Hours)90--SDRAM - Mobile2.3V~3VBOTTOM-2.5V0.8mm-Not Qualified-2.5V-512Mb 16M x 32-Volatile-133MHz0.25mA5.4nsDRAMParallel16MX323-STATE320.00004A536870912 bitCOMMON81921248FP1248---ROHS3 Compliant-90---------32b-----------
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Surface Mount90-TFBGA-0°C~70°C TATape & Reel (TR)Obsolete2 (1 Year)---SDRAM3V~3.6V---------256Mb 8M x 32-Volatile-166MHz-5.5nsDRAMParallel------------RoHS Compliant-90---------32b---90-TFBGA (8x13)70°C0°C166MHzParallel3.6V3V166MHz
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