ON Semiconductor BQ4013MA-120
- Part Number:
- BQ4013MA-120
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 7100907-BQ4013MA-120
- Description:
- Memory IC
- Datasheet:
- BQ4013(Y,LY)
ON Semiconductor BQ4013MA-120 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BQ4013MA-120.
- Mounting TypeThrough Hole
- Package / Case32-DIP Module (0.61, 15.49mm)
- Supplier Device Package32-DIP Module (18.42x42.8)
- Operating Temperature0°C~70°C TA
- PackagingTube
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologyNVSRAM (Non-Volatile SRAM)
- Voltage - Supply4.75V~5.5V
- Memory Size1Mb 128K x 8
- Memory TypeNon-Volatile
- Access Time120ns
- Memory FormatNVSRAM
- Memory InterfaceParallel
- Write Cycle Time - Word, Page120ns
- RoHS StatusNon-RoHS Compliant
BQ4013MA-120 Overview
This product is manufactured by ON Semiconductor and is classified as an electronic component for memory purposes. The mounting method employed is through hole technology, while the supplier's device package consists of a 32-DIP module with dimensions of 18.42x42.8. The operating temperature range for this product is between 0°C to 70°C in TA. As per the part status, it has been marked as obsolete. The technology used is NVSRAM (Non-Volatile Single Event Random Access Memory). The memory size stands at 1Mb, spread across 128K words and 8 bits. It is categorized under non-volatile memory and features an access time of 120ns. The memory interface utilized is parallel in nature. Lastly, the write cycle time for this product is characterized by a word-level access, with a page being accessed within a time frame of 120ns.
BQ4013MA-120 Features
Package / Case: 32-DIP Module (0.61, 15.49mm)
BQ4013MA-120 Applications
There are a lot of Rochester Electronics, LLC
BQ4013MA-120 Memory applications.
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
This product is manufactured by ON Semiconductor and is classified as an electronic component for memory purposes. The mounting method employed is through hole technology, while the supplier's device package consists of a 32-DIP module with dimensions of 18.42x42.8. The operating temperature range for this product is between 0°C to 70°C in TA. As per the part status, it has been marked as obsolete. The technology used is NVSRAM (Non-Volatile Single Event Random Access Memory). The memory size stands at 1Mb, spread across 128K words and 8 bits. It is categorized under non-volatile memory and features an access time of 120ns. The memory interface utilized is parallel in nature. Lastly, the write cycle time for this product is characterized by a word-level access, with a page being accessed within a time frame of 120ns.
BQ4013MA-120 Features
Package / Case: 32-DIP Module (0.61, 15.49mm)
BQ4013MA-120 Applications
There are a lot of Rochester Electronics, LLC
BQ4013MA-120 Memory applications.
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
embedded logic
eDRAM
BQ4013MA-120 More Descriptions
128Kx8 Nonvolatile SRAM, 5% Voltage Tolerance 32-DIP MODULE 0 to 70
NVRAM NVSRAM Parallel 1M-Bit 5V 32-Pin DIP Module
Non-Volatile SRAM Module, 128KX8, 120ns, CMOS, PDIP32
Obsolete Non-Volatile Non-RoHS Compliant Parallel NVSRAM Memory 0C~70C TA 4.75V~5.5V 1Mb 128K x 8 120ns
Non-Volative SRAM (NVSRAM) 128Kx8 Nonvolatile SRAM
IC NVSRAM 1MBIT PAR 32DIP MODULE
Obsolete, LTB expires Nov-30-2013
NVRAM NVSRAM Parallel 1M-Bit 5V 32-Pin DIP Module
Non-Volatile SRAM Module, 128KX8, 120ns, CMOS, PDIP32
Obsolete Non-Volatile Non-RoHS Compliant Parallel NVSRAM Memory 0C~70C TA 4.75V~5.5V 1Mb 128K x 8 120ns
Non-Volative SRAM (NVSRAM) 128Kx8 Nonvolatile SRAM
IC NVSRAM 1MBIT PAR 32DIP MODULE
Obsolete, LTB expires Nov-30-2013
The three parts on the right have similar specifications to BQ4013MA-120.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeAccess TimeMemory FormatMemory InterfaceWrite Cycle Time - Word, PageRoHS StatusView Compare
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BQ4013MA-120Through Hole32-DIP Module (0.61, 15.49mm)32-DIP Module (18.42x42.8)0°C~70°C TATubeObsolete3 (168 Hours)NVSRAM (Non-Volatile SRAM)4.75V~5.5V1Mb 128K x 8Non-Volatile120nsNVSRAMParallel120nsNon-RoHS Compliant-
-
Through Hole32-DIP Module (0.61, 15.49mm)32-DIP Module (18.42x52.96)0°C~70°C TATubeObsolete3 (168 Hours)NVSRAM (Non-Volatile SRAM)4.5V~5.5V2Mb 256K x 8Non-Volatile85nsNVSRAMParallel85nsROHS3 Compliant
-
Through Hole32-DIP Module (0.61, 15.49mm)32-DIP Module (18.42x42.8)-40°C~85°C TATubeObsolete3 (168 Hours)NVSRAM (Non-Volatile SRAM)4.5V~5.5V1Mb 128K x 8Non-Volatile85nsNVSRAMParallel85nsROHS3 Compliant
-
Through Hole28-DIP Module (0.61, 15.49mm)28-DIP Module (18.42x37.72)0°C~70°C TATubeObsolete3 (168 Hours)NVSRAM (Non-Volatile SRAM)4.75V~5.5V64Kb 8K x 8Non-Volatile150nsNVSRAMParallel150nsROHS3 Compliant
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