Infineon Technologies BGB741L7ESDE6327XTSA1
- Part Number:
- BGB741L7ESDE6327XTSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 7532979-BGB741L7ESDE6327XTSA1
- Description:
- 19.5dB Cellular, RKE, WiFi WIDE BAND LOW POWER Tape & Reel (TR) 50MHz~3.5GHz 1.8V~4V P1dB:-6.5dBm 1dB Surface Mount
- Datasheet:
- BGB741L7ESDE6327XTSA1
Infineon Technologies BGB741L7ESDE6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BGB741L7ESDE6327XTSA1.
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-XFDFN Exposed Pad
- Number of Pins6
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee4
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Terminal FinishGold (Au)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Max Power Dissipation120mW
- Voltage - Supply1.8V~4V
- ConstructionCOMPONENT
- Frequency50MHz~3.5GHz
- Test Frequency1.5GHz
- Current - Supply30mA
- Halogen FreeHalogen Free
- Gain19.5dB
- RF/Microwave Device TypeWIDE BAND LOW POWER
- RF TypeCellular, RKE, WiFi
- Input Power-Max (CW)20dBm
- Characteristic Impedance50Ohm
- Max Junction Temperature (Tj)150°C
- Noise Figure1dB
- P1dB-6.5dBm
- Height500μm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BGB741L7ESDE6327XTSA1 Overview
A RF Amplifier that has a cost-effective WIDE BAND LOW POWER RF/Microwave Device Type.Cellular, RKE, WiFi RF Type from the RF Amplifier.Advanced RF Amp' packaging Tape & Reel (TR) is used to provide high reliability.Packed in 6-XFDFN Exposed Pad, the RF power Amplifier is convenient for shipping overseas.It is recommended to mount Amplifiers RF in the way of Surface Mount.The Amplifiers RF can supply 1.8V~4V voltage.The high power RF Amplifier is designed with 6 pins.Supplied with 30mA RF Amplifiers' current.RF power Amplifier shouldrun at a temperature of 150°C more than 150°C degrees Celsius.
BGB741L7ESDE6327XTSA1 Features
WIDE BAND LOW POWER RF/Microwave Amplifier
RF Type Cellular, RKE, WiFi
1.8V~4V voltage
6 pins
30mA current
BGB741L7ESDE6327XTSA1 Applications
There are a lot of Infineon Technologies
BGB741L7ESDE6327XTSA1 RF Amplifiers applications.
Location-Enabled Mobile Devices
Telematics (Asset Tracking and Management)
Personal Navigation Device (PND)
Cellular Phones with GPS
Notebook PC
Ultra-Mobile PC
Recreational
Marine Navigation
Avionics
GPS
A RF Amplifier that has a cost-effective WIDE BAND LOW POWER RF/Microwave Device Type.Cellular, RKE, WiFi RF Type from the RF Amplifier.Advanced RF Amp' packaging Tape & Reel (TR) is used to provide high reliability.Packed in 6-XFDFN Exposed Pad, the RF power Amplifier is convenient for shipping overseas.It is recommended to mount Amplifiers RF in the way of Surface Mount.The Amplifiers RF can supply 1.8V~4V voltage.The high power RF Amplifier is designed with 6 pins.Supplied with 30mA RF Amplifiers' current.RF power Amplifier shouldrun at a temperature of 150°C more than 150°C degrees Celsius.
BGB741L7ESDE6327XTSA1 Features
WIDE BAND LOW POWER RF/Microwave Amplifier
RF Type Cellular, RKE, WiFi
1.8V~4V voltage
6 pins
30mA current
BGB741L7ESDE6327XTSA1 Applications
There are a lot of Infineon Technologies
BGB741L7ESDE6327XTSA1 RF Amplifiers applications.
Location-Enabled Mobile Devices
Telematics (Asset Tracking and Management)
Personal Navigation Device (PND)
Cellular Phones with GPS
Notebook PC
Ultra-Mobile PC
Recreational
Marine Navigation
Avionics
GPS
BGB741L7ESDE6327XTSA1 More Descriptions
RF Amp Single LNA 5GHz 4V Automotive 6-Pin TSLP EP T/R
1dB 50MHz~3.5GHz 19.5dB Cellular,RKE,WiFi PG-TSLP-7-1 RF Amplifiers ROHS
Rf Amplifier, 5Ghz, -55 To 150Deg C; Frequency Min:30Mhz; Frequency Max:5Ghz; Gain:19Db; Noise Figure Typ:1Db; Rf Ic Case Style:Tslp-7-1; No. Of Pins:7Pins; Supply Voltage Min:1.8V; Supply Voltage Max:4V; Product Range:- Rohs Compliant: Yes |Infineon BGB741L7ESDE6327XTSA1
The BGB741L7ESD is a high performance low noise amplifier (LNA) MMIC based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) bipolar technology, TSLP-7-1, RoHSInfineon SCT
The BGB741L7ESD is a high performance low noise amplifier (LNA) MMIC based on Infineons reliable high volume silicon germanium carbon (SiGe:C) bipolar technology. Its integrated feedback provides a broadband pre-match to 50 at input and output up to 3.5 GHz and improves the stability against parasitic oscillations. These measures simplify the design of arbitrary LNA application circuits. The integrated active biasing reduces the external parts count and stabilizes the bias current against temperature- and process-variations. The integrated protection elements make the device robust against electrostatic discharge (ESD) and high RF input power levels. The device is highly flexible because the bias current is adjustable and the device works with a broad supply voltage range. The BGB741L7ESD comes in a Pb-free and halogen-free low profile TSLP-7-1 package. | Target Applications: Mobile TV, DAB, RKE, AMR, Cellular, ZigBee, WiMAX, SDARs, WiFi, Cordless phone, UMTS, WLAN
1dB 50MHz~3.5GHz 19.5dB Cellular,RKE,WiFi PG-TSLP-7-1 RF Amplifiers ROHS
Rf Amplifier, 5Ghz, -55 To 150Deg C; Frequency Min:30Mhz; Frequency Max:5Ghz; Gain:19Db; Noise Figure Typ:1Db; Rf Ic Case Style:Tslp-7-1; No. Of Pins:7Pins; Supply Voltage Min:1.8V; Supply Voltage Max:4V; Product Range:- Rohs Compliant: Yes |Infineon BGB741L7ESDE6327XTSA1
The BGB741L7ESD is a high performance low noise amplifier (LNA) MMIC based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) bipolar technology, TSLP-7-1, RoHSInfineon SCT
The BGB741L7ESD is a high performance low noise amplifier (LNA) MMIC based on Infineons reliable high volume silicon germanium carbon (SiGe:C) bipolar technology. Its integrated feedback provides a broadband pre-match to 50 at input and output up to 3.5 GHz and improves the stability against parasitic oscillations. These measures simplify the design of arbitrary LNA application circuits. The integrated active biasing reduces the external parts count and stabilizes the bias current against temperature- and process-variations. The integrated protection elements make the device robust against electrostatic discharge (ESD) and high RF input power levels. The device is highly flexible because the bias current is adjustable and the device works with a broad supply voltage range. The BGB741L7ESD comes in a Pb-free and halogen-free low profile TSLP-7-1 package. | Target Applications: Mobile TV, DAB, RKE, AMR, Cellular, ZigBee, WiMAX, SDARs, WiFi, Cordless phone, UMTS, WLAN
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