Infineon Technologies BGB707L7ESDE6327XTSA1
- Part Number:
- BGB707L7ESDE6327XTSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 7532978-BGB707L7ESDE6327XTSA1
- Description:
- 27dB 802.11a/b/g/n Tape & Reel (TR) 2.3GHz 2.7GHz 1.8V~4V P1dB:8dBm 0.7dB Surface Mount
- Datasheet:
- BGB707L7ESDE6327XTSA1
Infineon Technologies BGB707L7ESDE6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BGB707L7ESDE6327XTSA1.
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case6-XFDFN Exposed Pad
- Surface MountYES
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee4
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations7
- Terminal FinishGold (Au)
- HTS Code8542.39.00.01
- Voltage - Supply1.8V~4V
- Terminal PositionDUAL
- Terminal FormNO LEAD
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch0.5mm
- Frequency2.3GHz 2.7GHz
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PDSO-N7
- Test Frequency1.5GHz
- Current - Supply25mA
- Gain27dB
- Screening LevelAEC-Q101
- Telecom IC TypeTELECOM CIRCUIT
- RF Type802.11a/b/g/n
- Noise Figure0.7dB
- P1dB8dBm
- Length2mm
- Height Seated (Max)0.5mm
- Width1.3mm
- RoHS StatusROHS3 Compliant
BGB707L7ESDE6327XTSA1 Overview
802.11a/b/g/n RF Type from the RF Amplifier.Advanced RF Amp' packaging Tape & Reel (TR) is used to provide high reliability.Packed in 6-XFDFN Exposed Pad, the RF power Amplifier is convenient for shipping overseas.It is recommended to mount Amplifiers RF in the way of Surface Mount.The Amplifiers RF can supply 1.8V~4V voltage.The RF Amplifier has 1 function (s) in total.Supplied with 25mA RF Amplifiers' current.7 terminations with a variety of functions.
BGB707L7ESDE6327XTSA1 Features
RF Type 802.11a/b/g/n
1.8V~4V voltage
25mA current
BGB707L7ESDE6327XTSA1 Applications
There are a lot of Infineon Technologies
BGB707L7ESDE6327XTSA1 RF Amplifiers applications.
Location-Enabled Mobile Devices
Telematics (Asset Tracking and Management)
Personal Navigation Device (PND)
Cellular Phones with GPS
Notebook PC
Ultra-Mobile PC
Recreational
Marine Navigation
Avionics
GPS
802.11a/b/g/n RF Type from the RF Amplifier.Advanced RF Amp' packaging Tape & Reel (TR) is used to provide high reliability.Packed in 6-XFDFN Exposed Pad, the RF power Amplifier is convenient for shipping overseas.It is recommended to mount Amplifiers RF in the way of Surface Mount.The Amplifiers RF can supply 1.8V~4V voltage.The RF Amplifier has 1 function (s) in total.Supplied with 25mA RF Amplifiers' current.7 terminations with a variety of functions.
BGB707L7ESDE6327XTSA1 Features
RF Type 802.11a/b/g/n
1.8V~4V voltage
25mA current
BGB707L7ESDE6327XTSA1 Applications
There are a lot of Infineon Technologies
BGB707L7ESDE6327XTSA1 RF Amplifiers applications.
Location-Enabled Mobile Devices
Telematics (Asset Tracking and Management)
Personal Navigation Device (PND)
Cellular Phones with GPS
Notebook PC
Ultra-Mobile PC
Recreational
Marine Navigation
Avionics
GPS
BGB707L7ESDE6327XTSA1 More Descriptions
RF Amp Single MMIC Amp 10GHz 4V Automotive 6-Pin TSLP EP T/R
Rf Amp, Aec-Q101, 150Mhz-10Ghz, Tslp-7; Frequency Min:150Mhz; Frequency Max:10Ghz; Gain:27Db; Noise Figure Typ:0.4Db; Rf Ic Case Style:Tslp; No. Of Pins:7Pins; Supply Voltage Min:1.8V; Supply Voltage Max:4V; Operating Temperature Rohs Compliant: Yes |Infineon BGB707L7ESDE6327XTSA1
The BGB707L7ESD is a Silicon Germanium Carbon (SiGe:C) low noise amplifier MMIC with integrated ESD protection and active biasing, TSLP-7-1, RoHSInfineon SCT
The BGB707L7ESD is a Silicon Germanium Carbon (SiGe:C) low noise amplifier MMIC with integrated ESD protection and active biasing. The device is as flexible as a discrete transistor and features high gain, reduced power consumption and very low distortion for a very wide range of applications. The device is based upon Infineon Technologies cost effective SiGe:C technology and comes in a low profile TSLP-7-1 leadless green package | Summary of Features: High performance general purpose wide band MMIC LNA; ESD protection integrated for all pins (3 kV for RF input vs. GND, 2 kV for all other pin combinations, HBM); Integrated active biasing circuit enables stable operation point against temperature- and processing-variations; Excellent noise figure from Infineons reliable high volume SiGe:C technology; High gain and linearity at low current consumption; Operation voltage: 1.8 V to 4.0 V; Adjustable operation current 2.1 mA to 25 mA by external resistor; Power-off function; Very small and leadless package TSLP-7-1, 2.0 x 1.3 x 0.4 mm3; Pb-free (RoHS compliant) and halogen-free (WEEE compliant) package Applications | Target Applications: Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5/3.5/5 GHz, UWB, WiFi, Bluetooth; Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB; Multimedia applications such as mobile/portable TV, CATV, FM Radio; 3G/4G UMTS/LTE mobile phone applications; ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
Rf Amp, Aec-Q101, 150Mhz-10Ghz, Tslp-7; Frequency Min:150Mhz; Frequency Max:10Ghz; Gain:27Db; Noise Figure Typ:0.4Db; Rf Ic Case Style:Tslp; No. Of Pins:7Pins; Supply Voltage Min:1.8V; Supply Voltage Max:4V; Operating Temperature Rohs Compliant: Yes |Infineon BGB707L7ESDE6327XTSA1
The BGB707L7ESD is a Silicon Germanium Carbon (SiGe:C) low noise amplifier MMIC with integrated ESD protection and active biasing, TSLP-7-1, RoHSInfineon SCT
The BGB707L7ESD is a Silicon Germanium Carbon (SiGe:C) low noise amplifier MMIC with integrated ESD protection and active biasing. The device is as flexible as a discrete transistor and features high gain, reduced power consumption and very low distortion for a very wide range of applications. The device is based upon Infineon Technologies cost effective SiGe:C technology and comes in a low profile TSLP-7-1 leadless green package | Summary of Features: High performance general purpose wide band MMIC LNA; ESD protection integrated for all pins (3 kV for RF input vs. GND, 2 kV for all other pin combinations, HBM); Integrated active biasing circuit enables stable operation point against temperature- and processing-variations; Excellent noise figure from Infineons reliable high volume SiGe:C technology; High gain and linearity at low current consumption; Operation voltage: 1.8 V to 4.0 V; Adjustable operation current 2.1 mA to 25 mA by external resistor; Power-off function; Very small and leadless package TSLP-7-1, 2.0 x 1.3 x 0.4 mm3; Pb-free (RoHS compliant) and halogen-free (WEEE compliant) package Applications | Target Applications: Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5/3.5/5 GHz, UWB, WiFi, Bluetooth; Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB; Multimedia applications such as mobile/portable TV, CATV, FM Radio; 3G/4G UMTS/LTE mobile phone applications; ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
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