Microchip Technology AT21CS01-SSHM10-B
- Part Number:
- AT21CS01-SSHM10-B
- Manufacturer:
- Microchip Technology
- Ventron No:
- 7013248-AT21CS01-SSHM10-B
- Description:
- Memory IC AT21CS01 4.9mm mm
- Datasheet:
- AT21CS01-SSHM10-B
Microchip Technology AT21CS01-SSHM10-B technical specifications, attributes, parameters and parts with similar specifications to Microchip Technology AT21CS01-SSHM10-B.
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTube
- Published2017
- JESD-609 Codee4
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- TechnologyCMOS
- Voltage - Supply1.7V~3.6V
- Terminal PositionDUAL
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch1.27mm
- Base Part NumberAT21CS01
- JESD-30 CodeR-PDSO-G8
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size1Kb 128 x 8
- Memory TypeNon-Volatile
- Operating ModeSYNCHRONOUS
- Clock Frequency125kHz
- Memory FormatEEPROM
- Memory InterfaceI2C, Single Wire
- Organization128X8
- Memory Width8
- Write Cycle Time - Word, Page5ms
- Memory Density1024 bit
- Parallel/SerialSERIAL
- Serial Bus Type1-WIRE
- Write Cycle Time-Max (tWC)5ms
- Height Seated (Max)1.75mm
- Length4.9mm
- Width3.9mm
- RoHS StatusNon-RoHS Compliant
AT21CS01-SSHM10-B Overview
This product was manufactured by Microchip Technology, is an essential Memory electronic component. The JESD-609 Code denotes its unique identifier - e4. It features an array of 8 terminations, making it versatile for diverse applications. The technology employed in this component is CMOS, which ensures high performance and energy efficiency. This component is designed with a single function, enhancing its simplicity and ease of use. The terminal pitch stands at 1.27mm, ensuring compactness and efficient space utilization. The operating mode is synchronous, providing reliable and efficient operations. The parallel or serial connectivity is available only in serial mode, offering flexibility to users who require such capabilities. The serial bus type is 1-Wire, enhancing data transfer speed and minimizing system requirements. The maximum write cycle time (tWC) stands at 5ms, guaranteeing timely data writing. Lastly, the height seated (max) measurement is 1.75mm, adding to the overall dimensions of the component without compromising its performance.
AT21CS01-SSHM10-B Features
Package / Case: 8-SOIC (0.154, 3.90mm Width)
AT21CS01-SSHM10-B Applications
There are a lot of Microchip Technology
AT21CS01-SSHM10-B Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
This product was manufactured by Microchip Technology, is an essential Memory electronic component. The JESD-609 Code denotes its unique identifier - e4. It features an array of 8 terminations, making it versatile for diverse applications. The technology employed in this component is CMOS, which ensures high performance and energy efficiency. This component is designed with a single function, enhancing its simplicity and ease of use. The terminal pitch stands at 1.27mm, ensuring compactness and efficient space utilization. The operating mode is synchronous, providing reliable and efficient operations. The parallel or serial connectivity is available only in serial mode, offering flexibility to users who require such capabilities. The serial bus type is 1-Wire, enhancing data transfer speed and minimizing system requirements. The maximum write cycle time (tWC) stands at 5ms, guaranteeing timely data writing. Lastly, the height seated (max) measurement is 1.75mm, adding to the overall dimensions of the component without compromising its performance.
AT21CS01-SSHM10-B Features
Package / Case: 8-SOIC (0.154, 3.90mm Width)
AT21CS01-SSHM10-B Applications
There are a lot of Microchip Technology
AT21CS01-SSHM10-B Memory applications.
Cache memory
cell phones
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
AT21CS01-SSHM10-B More Descriptions
Application Specific EEPROMs, 8Bytes, 1.7 to 3.6V, -40 to 85°C, SOIC-8, RoHSMicrochip SCT
EEPROM, 128X8, Serial, CMOS, PDSO8
1.7-3.6V, 125Kbps, Ind Tmp, 8-SOIC
IC EEPROM 1KBIT I2C 125KHZ 8SOIC
EEPROM, 1KBIT, -40 TO 85DEG C;
1.7-3.6V, 125Kbps, Ind Tmp, 2-Xsfn, Add=000 8 Soic 3.90Mm(.150In) Tube Rohs Compliant: Yes |Microchip AT21CS01-SSHM10-B
EEPROM, 128X8, Serial, CMOS, PDSO8
1.7-3.6V, 125Kbps, Ind Tmp, 8-SOIC
IC EEPROM 1KBIT I2C 125KHZ 8SOIC
EEPROM, 1KBIT, -40 TO 85DEG C;
1.7-3.6V, 125Kbps, Ind Tmp, 2-Xsfn, Add=000 8 Soic 3.90Mm(.150In) Tube Rohs Compliant: Yes |Microchip AT21CS01-SSHM10-B
The three parts on the right have similar specifications to AT21CS01-SSHM10-B.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchBase Part NumberJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeClock FrequencyMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityParallel/SerialSerial Bus TypeWrite Cycle Time-Max (tWC)Height Seated (Max)LengthWidthRoHS StatusNumber of PinsPbfree CodePeak Reflow Temperature (Cel)Reflow Temperature-Max (s)Time@Peak Reflow Temperature-Max (s)View Compare
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AT21CS01-SSHM10-B8 WeeksSurface Mount8-SOIC (0.154, 3.90mm Width)YES-40°C~85°C TATube2017e4Active1 (Unlimited)8Nickel/Palladium/Gold (Ni/Pd/Au)CMOS1.7V~3.6VDUAL11.8V1.27mmAT21CS01R-PDSO-G83.6V1.7V1Kb 128 x 8Non-VolatileSYNCHRONOUS125kHzEEPROMI2C, Single Wire128X885ms1024 bitSERIAL1-WIRE5ms1.75mm4.9mm3.9mmNon-RoHS Compliant------
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8 WeeksSurface Mount8-SOIC (0.154, 3.90mm Width)YES-40°C~85°C TCTape & Reel (TR)2005e4Active3 (168 Hours)8Nickel/Palladium/Gold (Ni/Pd/Au)CMOS1.7V~3.6VDUAL11.8V1.27mmAT21CS01-3.6V1.7V1Kb 128 x 8Non-VolatileSYNCHRONOUS125kHzEEPROMI2C, Single Wire-85ms1024 bitSERIAL1-WIRE5ms1.75mm4.9mm3.9mmROHS3 Compliant8yes26040-
-
16 WeeksSurface MountTO-236-3, SC-59, SOT-23-3YES-40°C~85°C TCTape & Reel (TR)2005e3Active1 (Unlimited)3Matte Tin (Sn) - annealedCMOS1.7V~3.6VDUAL11.8V-AT21CS01R-PDSO-G33.6V1.7V1Kb 128 x 8Non-VolatileSYNCHRONOUS125kHzEEPROMI2C, Single Wire128X885ms1024 bitSERIAL1-WIRE5ms1.12mm2.9mm1.3mmROHS3 Compliant-yes260-40
-
16 WeeksSurface MountTO-236-3, SC-59, SOT-23-3YES-40°C~85°C TCTape & Reel (TR)2014e3Active1 (Unlimited)3Matte Tin (Sn) - annealedCMOS1.7V~3.6VDUAL11.8V-AT21CS01R-PDSO-G33.6V1.7V1Kb 128 x 8Non-VolatileSYNCHRONOUS125kHzEEPROMI2C, Single Wire128X885ms1024 bitSERIAL1-WIRE5ms1.12mm2.9mm1.3mmROHS3 Compliant-yes26040-
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