ZXTP2027FTA

Diodes Incorporated ZXTP2027FTA

Part Number:
ZXTP2027FTA
Manufacturer:
Diodes Incorporated
Ventron No:
2462828-ZXTP2027FTA
Description:
TRANS PNP 60V 4A SOT23-3
ECAD Model:
Datasheet:
ZXTP2027FTA

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Specifications
Diodes Incorporated ZXTP2027FTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXTP2027FTA.
  • Factory Lead Time
    15 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    7.994566mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2005
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -60V
  • Max Power Dissipation
    1.56W
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -4A
  • Frequency
    165MHz
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    ZXTP2027
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    1.56W
  • Power - Max
    1.2W
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    165MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    60V
  • Max Collector Current
    4A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 2A 2V
  • Current - Collector Cutoff (Max)
    20nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    240mV @ 200mA, 4A
  • Collector Emitter Breakdown Voltage
    60V
  • Transition Frequency
    165MHz
  • Collector Emitter Saturation Voltage
    -60mV
  • Max Breakdown Voltage
    60V
  • Collector Base Voltage (VCBO)
    100V
  • Emitter Base Voltage (VEBO)
    -7V
  • Continuous Collector Current
    -4A
  • Height
    1mm
  • Length
    3.05mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
ZXTP2027FTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 2A 2V.The collector emitter saturation voltage is -60mV, which allows for maximum design flexibility.When VCE saturation is 240mV @ 200mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -4A for high efficiency.Emitter base voltages of -7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -4A.In the part, the transition frequency is 165MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 4A volts can be achieved.

ZXTP2027FTA Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of -60mV
the vce saturation(Max) is 240mV @ 200mA, 4A
the emitter base voltage is kept at -7V
the current rating of this device is -4A
a transition frequency of 165MHz


ZXTP2027FTA Applications
There are a lot of Diodes Incorporated
ZXTP2027FTA applications of single BJT transistors.


Inverter
Interface
Driver
Muting
ZXTP2027FTA More Descriptions
ZXTP2027F Series 60 V 4 A PNP SMT Medium Power Transistor - SOT-23
Small Signal Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 60V 4A 3Pin SOT23 | Diodes Inc ZXTP2027FTA
Trans GP BJT PNP 60V 4A 1560mW 3-Pin SOT-23 T/R
PNP TRANSISTOR 60V 4A SOT23 RoHSconf
TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector-to-Emitter Breakdown Voltage:60V; Typ Gain Bandwidth ft:165MHz; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23 (TO-236); Case Style:SOT-23 (TO-236); Current Ic hFE:10mA; Max Current Gain Hfe:145; Max Current Ic:4A; Max Current Ic Continuous a:-4A; Max Power Dissipation Ptot:1.2W; Max Voltage Vce Sat:-25mV; Min DC Current Gain Hfe:100; Min Hfe:100; Power Dissipation:1.2W; SMD Marking:951; Termination Type:SMD; Transistor Type:Bipolar Medium Power; Typ Hfe:250; Voltage Vcbo:100V; Current, Ic hfe -Do Not Use See ID 1182:10mA
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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