Diodes Incorporated ZXTP2027FTA
- Part Number:
- ZXTP2027FTA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2462828-ZXTP2027FTA
- Description:
- TRANS PNP 60V 4A SOT23-3
- Datasheet:
- ZXTP2027FTA
Diodes Incorporated ZXTP2027FTA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXTP2027FTA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight7.994566mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-60V
- Max Power Dissipation1.56W
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-4A
- Frequency165MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberZXTP2027
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1.56W
- Power - Max1.2W
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product165MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current4A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 2A 2V
- Current - Collector Cutoff (Max)20nA ICBO
- Vce Saturation (Max) @ Ib, Ic240mV @ 200mA, 4A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency165MHz
- Collector Emitter Saturation Voltage-60mV
- Max Breakdown Voltage60V
- Collector Base Voltage (VCBO)100V
- Emitter Base Voltage (VEBO)-7V
- Continuous Collector Current-4A
- Height1mm
- Length3.05mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZXTP2027FTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 2A 2V.The collector emitter saturation voltage is -60mV, which allows for maximum design flexibility.When VCE saturation is 240mV @ 200mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -4A for high efficiency.Emitter base voltages of -7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -4A.In the part, the transition frequency is 165MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 4A volts can be achieved.
ZXTP2027FTA Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of -60mV
the vce saturation(Max) is 240mV @ 200mA, 4A
the emitter base voltage is kept at -7V
the current rating of this device is -4A
a transition frequency of 165MHz
ZXTP2027FTA Applications
There are a lot of Diodes Incorporated
ZXTP2027FTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 2A 2V.The collector emitter saturation voltage is -60mV, which allows for maximum design flexibility.When VCE saturation is 240mV @ 200mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -4A for high efficiency.Emitter base voltages of -7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -4A.In the part, the transition frequency is 165MHz.This device can take an input voltage of 60V volts before it breaks down.A maximum collector current of 4A volts can be achieved.
ZXTP2027FTA Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of -60mV
the vce saturation(Max) is 240mV @ 200mA, 4A
the emitter base voltage is kept at -7V
the current rating of this device is -4A
a transition frequency of 165MHz
ZXTP2027FTA Applications
There are a lot of Diodes Incorporated
ZXTP2027FTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
ZXTP2027FTA More Descriptions
ZXTP2027F Series 60 V 4 A PNP SMT Medium Power Transistor - SOT-23
Small Signal Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 60V 4A 3Pin SOT23 | Diodes Inc ZXTP2027FTA
Trans GP BJT PNP 60V 4A 1560mW 3-Pin SOT-23 T/R
PNP TRANSISTOR 60V 4A SOT23 RoHSconf
TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector-to-Emitter Breakdown Voltage:60V; Typ Gain Bandwidth ft:165MHz; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23 (TO-236); Case Style:SOT-23 (TO-236); Current Ic hFE:10mA; Max Current Gain Hfe:145; Max Current Ic:4A; Max Current Ic Continuous a:-4A; Max Power Dissipation Ptot:1.2W; Max Voltage Vce Sat:-25mV; Min DC Current Gain Hfe:100; Min Hfe:100; Power Dissipation:1.2W; SMD Marking:951; Termination Type:SMD; Transistor Type:Bipolar Medium Power; Typ Hfe:250; Voltage Vcbo:100V; Current, Ic hfe -Do Not Use See ID 1182:10mA
Small Signal Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 60V 4A 3Pin SOT23 | Diodes Inc ZXTP2027FTA
Trans GP BJT PNP 60V 4A 1560mW 3-Pin SOT-23 T/R
PNP TRANSISTOR 60V 4A SOT23 RoHSconf
TRANSISTOR, PNP, SOT-23; Transistor Polarity:PNP; Collector-to-Emitter Breakdown Voltage:60V; Typ Gain Bandwidth ft:165MHz; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23 (TO-236); Case Style:SOT-23 (TO-236); Current Ic hFE:10mA; Max Current Gain Hfe:145; Max Current Ic:4A; Max Current Ic Continuous a:-4A; Max Power Dissipation Ptot:1.2W; Max Voltage Vce Sat:-25mV; Min DC Current Gain Hfe:100; Min Hfe:100; Power Dissipation:1.2W; SMD Marking:951; Termination Type:SMD; Transistor Type:Bipolar Medium Power; Typ Hfe:250; Voltage Vcbo:100V; Current, Ic hfe -Do Not Use See ID 1182:10mA
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