Diodes Incorporated ZXTD09N50DE6TA

Name: ZXTD09N50DE6TA
Brand: Diodes Incorporated
SKU: 2461104-ZXTD09N50DE6TA
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: ZXTD09N50DE6TA

Manufacturer:: Diodes Incorporated

Ventron No:: 2461104-ZXTD09N50DE6TA

Description:: TRANS 2NPN 50V 1A SOT23-6

ECAD Model:

Datasheet:: ZXTD09N50DE6TA

Specifications

Diodes Incorporated ZXTD09N50DE6TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZXTD09N50DE6TA.

Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6
Number of Pins
6
Weight
14.996898mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
50V
Max Power Dissipation
1.7W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
2A
Frequency
215MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
ZXTD09N50D
Pin Count
6
Number of Elements
2
Polarity
NPN
Element Configuration
Dual
Power Dissipation
1.7W
Power - Max
1.1W
Transistor Application
SWITCHING
Gain Bandwidth Product
215MHz
Transistor Type
2 NPN (Dual)
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 500mA 2V
Current - Collector Cutoff (Max)
10nA
Vce Saturation (Max) @ Ib, Ic
270mV @ 50mA, 1A
Collector Emitter Breakdown Voltage
50V
Transition Frequency
215MHz
Collector Emitter Saturation Voltage
160mV
Max Breakdown Voltage
50V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
1A
Height
1.3mm
Length
3.1mm
Width
1.8mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

ZXTD09N50DE6TA Overview
This product is manufactured by Diodes Incorporated and belongs to the category of Transistors - Bipolar (BJT) - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet ZXTD09N50DE6TA or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of ZXTD09N50DE6TA. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

ZXTD09N50DE6TA More Descriptions

Bipolar Array, Dual Npn, 50V, 1A, Sot-26 Rohs Compliant: Yes |Diodes Inc. ZXTD09N50DE6TA
ZXTD09N50DE6 Series 50V 1 A Dual NPN Silicon Low Saturation Transistor -SOT-23-6
Bipolar Transistors - BJT Dual 50V NPN
NPN DUAL TRANS. 50V 1A SOT23-6 RoHSconf

Product Comparison

The three parts on the right have similar specifications to ZXTD09N50DE6TA.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Polarity

Element Configuration

Power Dissipation

Power - Max

Transistor Application

Gain Bandwidth Product

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

Continuous Collector Current

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Max Operating Temperature

Min Operating Temperature

Terminal Position

JESD-30 Code

Qualification Status

Case Connection

DC Current Gain-Min (hFE)

Additional Feature

REACH SVHC

Current - Collector (Ic) (Max)

Frequency - Transition

View Compare
ZXTD09N50DE6TA

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

SOT-23-6

6

14.996898mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2011

e3

yes

Active

1 (Unlimited)

6

EAR99

Matte Tin (Sn)

Other Transistors

50V

1.7W

GULL WING

260

2A

215MHz

40

ZXTD09N50D

6

2

NPN

Dual

1.7W

1.1W

SWITCHING

215MHz

2 NPN (Dual)

50V

1A

200 @ 500mA 2V

10nA

270mV @ 50mA, 1A

50V

215MHz

160mV

50V

50V

5V

1A

1.3mm

3.1mm

1.8mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-
ZXTDC3M832TA

Diodes Incorporated

-

Surface Mount

-

-

832

-

-

-

Tape & Reel (TR)

2006

e3

-

Obsolete

1 (Unlimited)

10

EAR99

Matte Tin (Sn)

BIP General Purpose Small Signal

-

1W

FLAT

260

-

165MHz

40

-

10

2

NPN, PNP

Dual

3W

-

SWITCHING

190MHz

-

320mV

3A

-

-

-

40V

190MHz

-

40V

50V

7.5V

-

1mm

3mm

2mm

-

ROHS3 Compliant

Lead Free

150°C

-55°C

QUAD

R-PQFP-F10

Not Qualified

COLLECTOR

100

-

-

-

-

ZXTD09N50DE6TA vs ZXTDC3M832TA
ZXTD720MCTA

Diodes Incorporated

15 Weeks

Surface Mount

Surface Mount

8-WDFN Exposed Pad

8

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2011

e4

yes

Active

1 (Unlimited)

8

EAR99

Nickel/Palladium/Gold (Ni/Pd/Au)

Other Transistors

-

1.7W

-

260

-

-

40

ZXTD720MC

8

2

PNP

Dual

-

1.7W

SWITCHING

190MHz

2 PNP (Dual)

370mV

3A

60 @ 1.5A 2V

100nA

370mV @ 250mA, 2.5A

40V

190MHz

-25mV

40V

-50V

-7V

-3A

-

-

-

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

COLLECTOR

-

HIGH RELIABILITY

No SVHC

-

-

ZXTD09N50DE6TA vs ZXTD720MCTA
ZXTD618MCTA

Diodes Incorporated

16 Weeks

Surface Mount

Surface Mount

8-VDFN Exposed Pad

8

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2011

e4

yes

Active

1 (Unlimited)

8

EAR99

Nickel/Palladium/Gold (Ni/Pd/Au)

Other Transistors

-

1.7W

-

260

-

-

40

-

8

2

NPN

Dual

-

-

SWITCHING

140MHz

2 NPN (Dual)

20V

4.5A

300 @ 200mA 2V

100nA

300mV @ 125mA, 4.5A

20V

140MHz

8mV

20V

40V

7V

4.5A

-

-

-

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

COLLECTOR

-

HIGH RELIABILITY

No SVHC

5A

100MHz

ZXTD09N50DE6TA vs ZXTD618MCTA