ZVP2110ASTZ

Diodes Incorporated ZVP2110ASTZ

Part Number:
ZVP2110ASTZ
Manufacturer:
Diodes Incorporated
Ventron No:
2485838-ZVP2110ASTZ
Description:
MOSFET P-CH 100V 0.23A TO92-3
ECAD Model:
Datasheet:
ZVP2110ASTZ

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Specifications
Diodes Incorporated ZVP2110ASTZ technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZVP2110ASTZ.
  • Factory Lead Time
    17 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    E-Line-3
  • Number of Pins
    3
  • Weight
    453.59237mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Box (TB)
  • Published
    2012
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    8Ohm
  • Terminal Finish
    Matte Tin (Sn)
  • Voltage - Rated DC
    -100V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    WIRE
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -230mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    700mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    700mW
  • Turn On Delay Time
    7 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    8 Ω @ 375mA, 10V
  • Vgs(th) (Max) @ Id
    3.5V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    100pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    230mA Ta
  • Rise Time
    15ns
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    15 ns
  • Turn-Off Delay Time
    12 ns
  • Continuous Drain Current (ID)
    230mA
  • Gate to Source Voltage (Vgs)
    20V
  • Height
    4.01mm
  • Length
    4.77mm
  • Width
    2.41mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
ZVP2110ASTZ Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 100pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 12 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 7 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

ZVP2110ASTZ Features
a continuous drain current (ID) of 230mA
the turn-off delay time is 12 ns
a 100V drain to source voltage (Vdss)


ZVP2110ASTZ Applications
There are a lot of Diodes Incorporated
ZVP2110ASTZ applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
ZVP2110ASTZ More Descriptions
Trans MOSFET P-CH 100V 0.23A 3-Pin E-Line Box
P-Channel 100 V 8 Ohm Enhancement Mode Vertical DMOS FET
Small Signal Field-Effect Transistor, 0.23A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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