Diodes Incorporated ZDT6790TA
- Part Number:
- ZDT6790TA
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2844097-ZDT6790TA
- Description:
- TRANS NPN/PNP 45V/40V 2A SM8
- Datasheet:
- ZDT6790TA
Diodes Incorporated ZDT6790TA technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated ZDT6790TA.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SMD, Gull Wing
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryBIP General Purpose Small Signal
- Max Power Dissipation2.75W
- Peak Reflow Temperature (Cel)260
- Current Rating2A
- Frequency150MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberZDT6790
- Pin Count8
- Number of Elements2
- PolarityNPN, PNP
- Element ConfigurationDual
- Power Dissipation2.75W
- Turn On Delay Time33 ns
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product150MHz
- Transistor TypeNPN, PNP
- Turn-Off Delay Time1.3 μs
- Collector Emitter Voltage (VCEO)500mV
- Max Collector Current2A
- DC Current Gain (hFE) (Min) @ Ic, Vce400 @ 1A 2V / 300 @ 10mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 5mA, 1A / 750mV @ 50mA, 2A
- Collector Emitter Breakdown Voltage40V
- Voltage - Collector Emitter Breakdown (Max)45V 40V
- Transition Frequency150MHz
- Collector Emitter Saturation Voltage500mV
- Max Breakdown Voltage40V
- Frequency - Transition150MHz 100MHz
- Collector Base Voltage (VCBO)45V
- Emitter Base Voltage (VEBO)5V
- hFE Min150
- Continuous Collector Current2A
- Height1.6mm
- Length6.7mm
- Width3.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
ZDT6790TA Description
The ZDT6790TA is a complementary medium power high gain transistor IN SM-8 PACKAGE. The semiconductor device known as a transistor is used to switch or amplify electrical impulses. It is one of the fundamental components of contemporary electronics. It has at least three terminals for connecting to an electronic circuit and is made of semiconductor material. The current flowing through another pair of the transistor's terminals is controlled by the voltage or current provided to one set of those terminals. A transistor can magnify a signal because the regulated (output) power can be greater than the controlling (input) power. Although many more transistors in small form are found incorporated in integrated circuits, not all of them are packaged individually.
ZDT6790TA Features
Lead-Free Finish; RoHS Compliant
Halogen and Antimony Free. “Green” Device
Qualified to AEC-Q101 Standards for High Reliability
NPN Transistor
- BVCEO > 45 - VCE(sat) < 100mV @ IC= 100mA - Continuous Current IC = 2A PNP Transistor
- BVCEO > -40V - VCE(sat) < -250mV @ IC= -500mA - Continuous Current IC = -2A
ZDT6790TA Applications
DC to AC converters
Power supply
Power control circuits
Inverters
Switch-mode power supplies (SMPS)
Relays
Converters
Power amplifiers
The ZDT6790TA is a complementary medium power high gain transistor IN SM-8 PACKAGE. The semiconductor device known as a transistor is used to switch or amplify electrical impulses. It is one of the fundamental components of contemporary electronics. It has at least three terminals for connecting to an electronic circuit and is made of semiconductor material. The current flowing through another pair of the transistor's terminals is controlled by the voltage or current provided to one set of those terminals. A transistor can magnify a signal because the regulated (output) power can be greater than the controlling (input) power. Although many more transistors in small form are found incorporated in integrated circuits, not all of them are packaged individually.
ZDT6790TA Features
Lead-Free Finish; RoHS Compliant
Halogen and Antimony Free. “Green” Device
Qualified to AEC-Q101 Standards for High Reliability
NPN Transistor
- BVCEO > 45 - VCE(sat) < 100mV @ IC= 100mA - Continuous Current IC = 2A PNP Transistor
- BVCEO > -40V - VCE(sat) < -250mV @ IC= -500mA - Continuous Current IC = -2A
ZDT6790TA Applications
DC to AC converters
Power supply
Power control circuits
Inverters
Switch-mode power supplies (SMPS)
Relays
Converters
Power amplifiers
ZDT6790TA More Descriptions
ZDT6790 Series 45 V 2 A Dual NPN/PNP Medium Power Darlington Transistor SOT-223
Trans GP BJT NPN/PNP 45V 2A 2750mW 8-Pin SM8 T/R
Power Bipolar Transistor, 2A I(C), 45V V(BR)CEO, 2-Element, NPN and PNP, Silicon, Plastic/Epoxy, 8 Pin
Comp High Gain NPN PNP trans,2A,40V, SM-8 | Diodes Inc ZDT6790TA
2.75W 2A 1PCSNPN&1PCSPNP SM-8 Bipolar Transistors - BJT ROHS
TRANSISTOR, NPN/PNP, SM-8; Module Configuration:Dual; Transistor Polarity:NPN / PNP; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency Typ ft:150MHz; Power Dissipation Pd:2.75W; DC Collector Current:2A; DC Current Gain hFE:500; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SM; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:500mV; Continuous Collector Current Ic Max:2A; Current Ic Continuous a Max:2A; Current Ic hFE:2A; Gain Bandwidth ft Min:150MHz; Gain Bandwidth ft Typ:150MHz; Hfe Min:150; Package / Case:SM-8; Peak Current Icm:6A; Power Dissipation Pd:2.75W; Power Dissipation Ptot Max:2.75W; Power Dissipation per device Max:2.25W; Termination Type:SMD; Turn Off Time:1300ns; Turn On Time:33ns; Voltage Vcbo:45V
Trans GP BJT NPN/PNP 45V 2A 2750mW 8-Pin SM8 T/R
Power Bipolar Transistor, 2A I(C), 45V V(BR)CEO, 2-Element, NPN and PNP, Silicon, Plastic/Epoxy, 8 Pin
Comp High Gain NPN PNP trans,2A,40V, SM-8 | Diodes Inc ZDT6790TA
2.75W 2A 1PCSNPN&1PCSPNP SM-8 Bipolar Transistors - BJT ROHS
TRANSISTOR, NPN/PNP, SM-8; Module Configuration:Dual; Transistor Polarity:NPN / PNP; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency Typ ft:150MHz; Power Dissipation Pd:2.75W; DC Collector Current:2A; DC Current Gain hFE:500; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SM; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:500mV; Continuous Collector Current Ic Max:2A; Current Ic Continuous a Max:2A; Current Ic hFE:2A; Gain Bandwidth ft Min:150MHz; Gain Bandwidth ft Typ:150MHz; Hfe Min:150; Package / Case:SM-8; Peak Current Icm:6A; Power Dissipation Pd:2.75W; Power Dissipation Ptot Max:2.75W; Power Dissipation per device Max:2.25W; Termination Type:SMD; Turn Off Time:1300ns; Turn On Time:33ns; Voltage Vcbo:45V
The three parts on the right have similar specifications to ZDT6790TA.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryMax Power DissipationPeak Reflow Temperature (Cel)Current RatingFrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsPolarityElement ConfigurationPower DissipationTurn On Delay TimeTransistor ApplicationGain Bandwidth ProductTransistor TypeTurn-Off Delay TimeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Transition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeVoltage - Rated DCReach Compliance CodeQualification StatusConfigurationView Compare
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ZDT6790TA15 WeeksSurface MountSurface Mount8-SMD, Gull Wing8SILICON-55°C~150°C TJTape & Reel (TR)2006e3noActive1 (Unlimited)8EAR99Matte Tin (Sn)BIP General Purpose Small Signal2.75W2602A150MHz40ZDT679082NPN, PNPDual2.75W33 nsSWITCHING150MHzNPN, PNP1.3 μs500mV2A400 @ 1A 2V / 300 @ 10mA 2V100nA ICBO500mV @ 5mA, 1A / 750mV @ 50mA, 2A40V45V 40V150MHz500mV40V150MHz 100MHz45V5V1502A1.6mm6.7mm3.7mmNo SVHCNoROHS3 CompliantLead Free-----
-
-Surface MountSurface Mount8-SMD, Gull Wing8SILICON-55°C~150°C TJTape & Reel (TR)1997e3-Obsolete1 (Unlimited)8EAR99MATTE TIN-2.75W2602A-40ZDT69082NPN---SWITCHING150MHz2 NPN (Dual)-500mV2A400 @ 1A 2V100nA ICBO500mV @ 5mA, 1A45V-150MHz-45V-45V5V-2A-----RoHS CompliantContains Lead45VunknownNot QualifiedSEPARATE, 2 ELEMENTS
-
-Surface MountSurface Mount8-SMD, Gull Wing8SILICON-55°C~150°C TJTape & Reel (TR)1997e3-Obsolete1 (Unlimited)8EAR99MATTE TIN-2.75W2602A-40ZDT65182NPN---SWITCHING175MHz2 NPN (Dual)-500mV2A100 @ 500mA 2V100nA ICBO500mV @ 200mA, 2A60V-240MHz-60V-80V5V-2A-----RoHS Compliant-60VunknownNot QualifiedSEPARATE, 2 ELEMENTS
-
-Surface MountSurface Mount8-SMD, Gull Wing8SILICON-55°C~150°C TJTape & Reel (TR)2006e3noObsolete1 (Unlimited)8EAR99Matte Tin (Sn)BIP General Purpose Small Signal2.75W260--40ZDT679082NPN, PNPDual--SWITCHING150MHzNPN, PNP-500mV2A400 @ 1A 2V / 300 @ 10mA 2V100nA ICBO500mV @ 5mA, 1A / 750mV @ 50mA, 2A40V45V 40V150MHz500mV-150MHz 100MHz50V5V5002A-----ROHS3 CompliantLead Free-not_compliantNot Qualified-
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