Vishay Semiconductor Diodes Division VS-GB70NA60UF
- Part Number:
- VS-GB70NA60UF
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Ventron No:
- 3587175-VS-GB70NA60UF
- Description:
- IGBT 600V 111A 447W SOT-227
- ECAD Model:
-
- Datasheet:
- VS-GB70NA60UF
Vishay Semiconductor Diodes Division VS-GB70NA60UF technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division VS-GB70NA60UF.
- MountChassis Mount, Screw
- Mounting TypeChassis Mount
- Package / CaseSOT-227-4, miniBLOC
- Number of Pins4
- Transistor Element MaterialSILICON
- Operating Temperature-40°C~150°C TJ
- Published2011
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Additional FeatureUL RECOGNIZED, LOW CONDUCTION LOSS
- Max Power Dissipation447W
- Terminal PositionUPPER
- Terminal FormUNSPECIFIED
- Pin Count4
- Number of Elements1
- ConfigurationSingle
- Case ConnectionISOLATED
- Power - Max447W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- InputStandard
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current111A
- Current - Collector Cutoff (Max)100μA
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage2.23V
- Turn On Time277 ns
- Vce(on) (Max) @ Vge, Ic2.44V @ 15V, 70A
- Turn Off Time-Nom (toff)308 ns
- IGBT TypeNPT
- NTC ThermistorNo
- Height12.3mm
- Length38.3mm
- Width25.7mm
- REACH SVHCUnknown
- RoHS StatusROHS3 Compliant
VS-GB70NA60UF Overview
This product is manufactured by Vishay Semiconductor Diodes Division and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet VS-GB70NA60UF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of VS-GB70NA60UF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Vishay Semiconductor Diodes Division and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet VS-GB70NA60UF or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of VS-GB70NA60UF. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
VS-GB70NA60UF More Descriptions
VS-GB70NA60UF, IGBT Module, N-channel, Dual Emitter, Single, 111A max, 600V, 4-Pin SOT-227
Trans IGBT Chip N-CH 600V 111A 4-Pin SOT-227
IGBT MOD 600V 111A 447W SOT227
French Electronic Distributor since 1988
TRANSISTOR,IGBT,600V,70A,SOT227; Transistor Type:IGBT; DC Collector Current:111A; Collector Emitter Voltage Vces:2.23V; Power Dissipation Pd:447W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Min:-40°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-227; No. of Pins:4; Operating Temperature Range:-40°C to 150°C; Power Dissipation Max:447W
Trans IGBT Chip N-CH 600V 111A 4-Pin SOT-227
IGBT MOD 600V 111A 447W SOT227
French Electronic Distributor since 1988
TRANSISTOR,IGBT,600V,70A,SOT227; Transistor Type:IGBT; DC Collector Current:111A; Collector Emitter Voltage Vces:2.23V; Power Dissipation Pd:447W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Min:-40°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-227; No. of Pins:4; Operating Temperature Range:-40°C to 150°C; Power Dissipation Max:447W
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