Vishay Semiconductor Diodes Division VS-GA200SA60UP
- Part Number:
- VS-GA200SA60UP
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Ventron No:
- 2854005-VS-GA200SA60UP
- Description:
- IGBT 600V 200A 500W SOT-227
- ECAD Model:
-
- Datasheet:
- VS-GA200SA60UP
Vishay Semiconductor Diodes Division VS-GA200SA60UP technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division VS-GA200SA60UP.
- MountChassis Mount, Panel, Screw
- Mounting TypeChassis Mount
- Package / CaseSOT-227-4, miniBLOC
- Number of Pins4
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- Published2014
- Part StatusLast Time Buy
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Additional FeatureUL APPROVED, LOW CONDUCTION LOSS
- Max Power Dissipation500W
- Terminal PositionUPPER
- Terminal FormUNSPECIFIED
- Number of Elements1
- ConfigurationSingle
- Power Dissipation500W
- Case ConnectionISOLATED
- Transistor ApplicationPOWER CONTROL
- Rise Time75ns
- Polarity/Channel TypeN-CHANNEL
- InputStandard
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current200A
- Current - Collector Cutoff (Max)1mA
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage1.6V
- Input Capacitance16.5nF
- Turn On Time131 ns
- Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 100A
- Turn Off Time-Nom (toff)620 ns
- NTC ThermistorNo
- Input Capacitance (Cies) @ Vce16.5nF @ 30V
- Height12.3mm
- Length38.3mm
- Width25.7mm
- REACH SVHCUnknown
- RoHS StatusROHS3 Compliant
VS-GA200SA60UP Overview
This product is manufactured by Vishay Semiconductor Diodes Division and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet VS-GA200SA60UP or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of VS-GA200SA60UP. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Vishay Semiconductor Diodes Division and belongs to the category of Transistors - IGBTs - Modules. The images we provide are for reference only, for detailed product information please see specification sheet VS-GA200SA60UP or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of VS-GA200SA60UP. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
VS-GA200SA60UP More Descriptions
VISHAY VS-GA200SA60UP. IGBT Array & Module Transistor, N Channel, 200 A, 1.6 V, 500 W, 600 V, ISOTOP
SINGLE IGBT, 600V, 200A; Transistor Type:IGBT; DC Collector Current:200A; Collector Emitter Voltage Vces:1.92V; Power Dissipation Pd:500W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Min:-55°C; No. of Pins:4 ;RoHS Compliant: Yes
IGBT, SOT-227; Transistor Polarity:N Channel; DC Collector Current:200A; Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation
IGBT, SOT-227; Transistor Polarity: N Channel; DC Collector Current: 200A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 500W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: ISOTOP; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Current Ic Continuous a Max: 200A; Current Temperature: 25°C; Fall Time tf: 460ns; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Max: 500W; Pulsed Current Icm: 400A; Rise Time: 75ns; Transistor Type: IGBT; Voltage Vces: 600V
SINGLE IGBT, 600V, 200A; Transistor Type:IGBT; DC Collector Current:200A; Collector Emitter Voltage Vces:1.92V; Power Dissipation Pd:500W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Min:-55°C; No. of Pins:4 ;RoHS Compliant: Yes
IGBT, SOT-227; Transistor Polarity:N Channel; DC Collector Current:200A; Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation
IGBT, SOT-227; Transistor Polarity: N Channel; DC Collector Current: 200A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 500W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: ISOTOP; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Current Ic Continuous a Max: 200A; Current Temperature: 25°C; Fall Time tf: 460ns; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Power Dissipation Max: 500W; Pulsed Current Icm: 400A; Rise Time: 75ns; Transistor Type: IGBT; Voltage Vces: 600V
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