Vishay Semiconductor Diodes Division VS-26MT80
- Part Number:
- VS-26MT80
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Ventron No:
- 2411350-VS-26MT80
- Description:
- RECTIFIER BRIDGE 800V 25A D-63
- ECAD Model:
-
- Datasheet:
- VS-26MT80
Vishay Semiconductor Diodes Division VS-26MT80 technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division VS-26MT80.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeQC Terminal
- Package / Case5-Square, D-63
- Number of Pins5
- Weight19.999993g
- Diode Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published2008
- JESD-609 Codee4
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- Terminal FinishGOLD
- Additional FeatureUL RECOGNIZED
- TechnologyStandard
- Terminal PositionUPPER
- Terminal FormSOLDER LUG
- Number of Elements1
- Element ConfigurationSingle
- Diode TypeThree Phase
- Current - Reverse Leakage @ Vr100μA @ 800V
- Case ConnectionISOLATED
- Forward Current25A
- Max Surge Current375A
- Forward Voltage1.26V
- Number of Phases3
- Peak Reverse Current200μA
- Max Repetitive Reverse Voltage (Vrrm)800V
- Peak Non-Repetitive Surge Current375A
- Max Forward Surge Current (Ifsm)375A
- Isolation Voltage2.7kV
- Height10mm
- Length28.5mm
- Width28.5mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
VS-26MT80 Overview
There is no forward voltage applied to this device.A 5-Square, D-63 package electronic component is basically a type of electronic component.Mounting method of the device is Through Hole.Keeping the temperature at -55°C~150°C TJ ensures normal operation.Current surges should be monitored and not exceeded.Powering this device requires a peak reverse voltage of 200μA.
VS-26MT80 Features
25A forward voltage
forward voltage of 25A
5-Square, D-63 package
operating at a temperature of -55°C~150°C TJ
peak reverse voltage of 200μA
a reverse voltage peak of 200μA
VS-26MT80 Applications
There are a lot of Vishay Semiconductor Diodes Division
VS-26MT80 applications of bridge rectifiers.
High forward surge current capability
Low thermal resistance
Extremely robust construction
Fuse-in-glass diodes design
Electrically isolated aluminum case
Motor controls – Low Voltage and Medium Voltage converters
SCR power bridges for solid state starters
SCR and diode based input rectifiers
Crowbar systems for motor drives
Wind power (alternative energy) – Converters available as diodes, SCRs or IGBTs
There is no forward voltage applied to this device.A 5-Square, D-63 package electronic component is basically a type of electronic component.Mounting method of the device is Through Hole.Keeping the temperature at -55°C~150°C TJ ensures normal operation.Current surges should be monitored and not exceeded.Powering this device requires a peak reverse voltage of 200μA.
VS-26MT80 Features
25A forward voltage
forward voltage of 25A
5-Square, D-63 package
operating at a temperature of -55°C~150°C TJ
peak reverse voltage of 200μA
a reverse voltage peak of 200μA
VS-26MT80 Applications
There are a lot of Vishay Semiconductor Diodes Division
VS-26MT80 applications of bridge rectifiers.
High forward surge current capability
Low thermal resistance
Extremely robust construction
Fuse-in-glass diodes design
Electrically isolated aluminum case
Motor controls – Low Voltage and Medium Voltage converters
SCR power bridges for solid state starters
SCR and diode based input rectifiers
Crowbar systems for motor drives
Wind power (alternative energy) – Converters available as diodes, SCRs or IGBTs
VS-26MT80 More Descriptions
VISHAY VS-26MT80 Bridge Rectifier Diode, Three, 800 V, 25 A, Module, 1.26 V, 5 Pins
Diode Rectifier Bridge Single 800V 25A 5-Pin Case D-63
Bridge Rectifier Diode, 3 Phase, 25A, 800V V(RRM), Silicon
:2.7kV; Junction Temperature Tj @ Irrm:150°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; Junction to Case Thermal Resistance A
BRIDGE RECTIFIER, 25A, 3PH; No. of Phases:Three; Repetitive Reverse Voltage Vrrm Max:800V; Forward Current If(AV):25A; Forward Voltage VF Max:1.26V; Diode Mounting Type:Surface Mount; Operating Temperature Range:-55°C to 150°C; Bridge Rectifier Case Style:D-63; No. of Pins:5; SVHC:No SVHC (19-Dec-2011); Body Height Max:10mm; Case Temperature Tc:60°C; Current If @ Vf:40A; Current Ir Max:2mA; Diode Type:Bridge Rectifier, Three Phase; External Depth:28.5mm; External Length / Height:21mm; External Width:28.5mm; Fixing Hole Diameter:5.2mm; Forward Surge Current Ifsm Max:360A; Isolation Voltage:2.7kV; Junction Temperature Tj @ Irrm:150°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; Junction to Case Thermal Resistance A:1.42°C/W; Output Current Max:25A; Package / Case:D-63; Surge Current Frequency:50Hz; Terminal Type:6.35mm x 0.8mm; Termination Type:Screw; Weight:20g
Diode Rectifier Bridge Single 800V 25A 5-Pin Case D-63
Bridge Rectifier Diode, 3 Phase, 25A, 800V V(RRM), Silicon
:2.7kV; Junction Temperature Tj @ Irrm:150°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; Junction to Case Thermal Resistance A
BRIDGE RECTIFIER, 25A, 3PH; No. of Phases:Three; Repetitive Reverse Voltage Vrrm Max:800V; Forward Current If(AV):25A; Forward Voltage VF Max:1.26V; Diode Mounting Type:Surface Mount; Operating Temperature Range:-55°C to 150°C; Bridge Rectifier Case Style:D-63; No. of Pins:5; SVHC:No SVHC (19-Dec-2011); Body Height Max:10mm; Case Temperature Tc:60°C; Current If @ Vf:40A; Current Ir Max:2mA; Diode Type:Bridge Rectifier, Three Phase; External Depth:28.5mm; External Length / Height:21mm; External Width:28.5mm; Fixing Hole Diameter:5.2mm; Forward Surge Current Ifsm Max:360A; Isolation Voltage:2.7kV; Junction Temperature Tj @ Irrm:150°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; Junction to Case Thermal Resistance A:1.42°C/W; Output Current Max:25A; Package / Case:D-63; Surge Current Frequency:50Hz; Terminal Type:6.35mm x 0.8mm; Termination Type:Screw; Weight:20g
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