Rohm Semiconductor UMT1NTN
- Part Number:
- UMT1NTN
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 3584729-UMT1NTN
- Description:
- TRANS 2PNP 50V 0.15A 6UMT
- ECAD Model:
-
- Datasheet:
- UMT1NTN
Rohm Semiconductor UMT1NTN technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor UMT1NTN.
- Factory Lead Time13 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2004
- JESD-609 Codee2
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin/Copper (Sn/Cu)
- HTS Code8541.21.00.75
- SubcategoryOther Transistors
- Voltage - Rated DC-50V
- Max Power Dissipation150mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-150mA
- Time@Peak Reflow Temperature-Max (s)10
- Base Part Number*MT1
- Pin Count6
- Output Voltage50V
- Number of Elements2
- PolarityPNP
- Element ConfigurationDual
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product140MHz
- Transistor Type2 PNP (Dual)
- Collector Emitter Voltage (VCEO)50V
- Max Collector Current150mA
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA 6V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage50V
- Max Frequency140MHz
- Transition Frequency140MHz
- Collector Emitter Saturation Voltage500mV
- Max Breakdown Voltage50V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)-6V
- hFE Min120
- Continuous Collector Current-150mA
- VCEsat-Max0.5 V
- Height900μm
- Length2mm
- Width1.25mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
UMT1NTN Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet UMT1NTN or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of UMT1NTN. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet UMT1NTN or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of UMT1NTN. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
UMT1NTN More Descriptions
ROHM UMT1NTN Dual PNP Bipolar Transistor, 0.15 A, 50 V, 6-Pin UMT | ROHM Semiconductor UMT1NTN
UMT1N Series 50 V 150 mA Dual PNP General Purpose Isolated Transistor-SOT-363
Trans GP BJT PNP 50V 0.15A 150mW 6-Pin UMT T/R
Transistor Dual PNP 150mA 0.15W SOIC6
50V 150mW 120@1mA,6V 150mA 2PCSPNP SOT-363-6(SC-70-6) Bipolar Transistors - BJT ROHS
Transistor Polarity:pnp; Collector Emitter Voltage V(Br)Ceo:-50V; Dc Collector Current:-150Ma; Power Dissipation Pd:150Mw; Dc Current Gain Hfe:120Hfe; No. Of Pins:6Pins; Transistor Mounting:surface Mount; Product Range:- Rohs Compliant: Yes
DUAL TRANSISTOR, PNP PNP; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -50V; Power Dissipation Pd: 150mW; DC Collector Current: -150mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SC-88; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: -150mA; Gain Bandwidth ft Typ: 140MHz; Module Configuration: Dual; No. of Channels: 2Channels; No. of Transistors: 2; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Output Current Max: 150mA; Output Voltage Max: 50V; Transition Frequency ft: 140MHz
UMT1N Series 50 V 150 mA Dual PNP General Purpose Isolated Transistor-SOT-363
Trans GP BJT PNP 50V 0.15A 150mW 6-Pin UMT T/R
Transistor Dual PNP 150mA 0.15W SOIC6
50V 150mW 120@1mA,6V 150mA 2PCSPNP SOT-363-6(SC-70-6) Bipolar Transistors - BJT ROHS
Transistor Polarity:pnp; Collector Emitter Voltage V(Br)Ceo:-50V; Dc Collector Current:-150Ma; Power Dissipation Pd:150Mw; Dc Current Gain Hfe:120Hfe; No. Of Pins:6Pins; Transistor Mounting:surface Mount; Product Range:- Rohs Compliant: Yes
DUAL TRANSISTOR, PNP PNP; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -50V; Power Dissipation Pd: 150mW; DC Collector Current: -150mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SC-88; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Ic Continuous a Max: -150mA; Gain Bandwidth ft Typ: 140MHz; Module Configuration: Dual; No. of Channels: 2Channels; No. of Transistors: 2; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Output Current Max: 150mA; Output Voltage Max: 50V; Transition Frequency ft: 140MHz
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