STMicroelectronics STP8NK85Z

Name: STP8NK85Z
Brand: STMicroelectronics
SKU: 2487999-STP8NK85Z
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP8NK85Z

Manufacturer:: STMicroelectronics

Ventron No:: 2487999-STP8NK85Z

Description:: MOSFET N-CH 850V 6.7A TO-220

ECAD Model:

Datasheet:: STP8NK85Z

Specifications

STMicroelectronics STP8NK85Z technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP8NK85Z.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
SuperMESH™
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN
Additional Feature
AVALANCHE RATED
Subcategory
FET General Purpose Power
Voltage - Rated DC
850V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
6.7A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STP8N
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
150W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
150W
Case Connection
ISOLATED
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.4 Ω @ 3.35A, 10V
Vgs(th) (Max) @ Id
4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
1870pF @ 25V
Current - Continuous Drain (Id) @ 25°C
6.7A Tc
Gate Charge (Qg) (Max) @ Vgs
60nC @ 10V
Rise Time
19ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
18 ns
Turn-Off Delay Time
58 ns
Continuous Drain Current (ID)
6.7A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
850V
Avalanche Energy Rating (Eas)
350 mJ
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP8NK85Z Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 350 mJ.The maximum input capacitance of this device is 1870pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 6.7A.When VGS=850V, and ID flows to VDS at 850VVDS, the drain-source breakdown voltage is 850V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 58 ns.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.

STP8NK85Z Features
the avalanche energy rating (Eas) is 350 mJ
a continuous drain current (ID) of 6.7A
a drain-to-source breakdown voltage of 850V voltage
the turn-off delay time is 58 ns

STP8NK85Z Applications
There are a lot of STMicroelectronics
STP8NK85Z applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

STP8NK85Z More Descriptions

N-CHANNEL 850V -1.1 Ohm - 8.6A TO-220 Zener-Protected SuperMESH MOSFET
MOSFET 850V 1.1OHM 6.7A, TO 220 AB NON ISOLPower Field-Effect Transistor, 6.7A I(D), 850V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Certification