STMicroelectronics STP30NM60N

STP30NM60N Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 900 mJ.A device's maximal input capacitance is 2700pF @ 50V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 25A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 125 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 100A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This device reduces its overall power consumption by using drive voltage (10V).

STP30NM60N Features
the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 125 ns
based on its rated peak drain current 100A.


STP30NM60N Applications
There are a lot of STMicroelectronics
STP30NM60N applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples