STMicroelectronics STGP30NC60W

Name: STGP30NC60W
Brand: STMicroelectronics
SKU: 3554867-STGP30NC60W
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STGP30NC60W

Manufacturer:: STMicroelectronics

Ventron No:: 3554867-STGP30NC60W

Description:: IGBT 600V 60A 200W TO220

ECAD Model:

Datasheet:: STGB,STGP,STGW30NC60W

Specifications

STMicroelectronics STGP30NC60W technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGP30NC60W.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
PowerMESH™
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
200W
Current Rating
30A
Base Part Number
STGP30
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
200W
Input Type
Standard
Turn On Delay Time
29.5 ns
Transistor Application
MOTOR CONTROL
Rise Time
12ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
118 ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
60A
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.5V
Turn On Time
42.5 ns
Test Condition
390V, 20A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 20A
Turn Off Time-Nom (toff)
189 ns
Gate Charge
102nC
Current - Collector Pulsed (Icm)
150A
Td (on/off) @ 25°C
29.5ns/118ns
Switching Energy
305μJ (on), 181μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5.75V
Height
15.75mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STGP30NC60W   Description
This IGBT utilizes the advanced PowerMESH? process resulting in an excellent trade-off between switching performance and low on-state behavior.

STGP30NC60W   Features
■ High frequency operation ■ Lower CRES / CIES ratio (no cross-conduction susceptibility)

STGP30NC60W   Applications
■ High frequency motor controls, inverters, ups ■ HF, SMPS and PFC in both hard switch and resonant topologies

STGP30NC60W More Descriptions

Transistor IGBT Chip N-CH 600V 60A 3-Pin (3 Tab) TO-220 Tube
STMICROELECTRONICS STGP30NC60W IGBT Single Transistor, 30 A, 2.5 V, 200 W, 600 V, TO-220, 3 Pins
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IGBT, N 600V 30A TO-220; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Ic Continuous a Max: 30A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pulsed Current Icm: 200A; Rise Time: 12ns; Termination Type: Through Hole; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 600V

Product Comparison

The three parts on the right have similar specifications to STGP30NC60W.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Max Power Dissipation

Current Rating

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Input Type

Turn On Delay Time

Transistor Application

Rise Time

Polarity/Channel Type

Turn-Off Delay Time

Collector Emitter Voltage (VCEO)

Max Collector Current

JEDEC-95 Code

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Voltage - Collector Emitter Breakdown (Max):

Vce(on) (Max) @ Vge, Ic:

Test Condition:

Td (on/off) @ 25°C:

Switching Energy:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Other Names:

Operating Temperature:

Mounting Type:

Moisture Sensitivity Level (MSL):

Manufacturer Standard Lead Time:

Lead Free Status / RoHS Status:

Input Type:

IGBT Type:

Gate Charge:

Detailed Description:

Current - Collector Pulsed (Icm):

Current - Collector (Ic) (Max):

Lifecycle Status

Factory Lead Time

Case Connection

Reverse Recovery Time

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Power - Max

IGBT Type

View Compare
STGP30NC60W

STMicroelectronics

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~150°C TJ

Tube

PowerMESH™

e3

Obsolete

1 (Unlimited)

3

EAR99

Tin (Sn)

Insulated Gate BIP Transistors

600V

200W

30A

STGP30

3

1

Single

200W

Standard

29.5 ns

MOTOR CONTROL

12ns

N-CHANNEL

118 ns

600V

60A

TO-220AB

600V

2.5V

42.5 ns

390V, 20A, 10 Ω, 15V

2.5V @ 15V, 20A

189 ns

102nC

150A

29.5ns/118ns

305μJ (on), 181μJ (off)

20V

5.75V

15.75mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STGP20V60F

ST

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

600V

2.2V @ 15V, 20A

400V, 20A, 15V

38ns/149ns

200µJ (on), 130µJ (off)

TO-220

-

167W

Tube

TO-220-3

497-13956-5
STGP20V60F-ND

-55°C ~ 175°C (TJ)

Through Hole

1 (Unlimited)

42 Weeks

Lead free / RoHS Compliant

Standard

Trench Field Stop

116nC

IGBT Trench Field Stop 600V 40A 167W Through Hole TO-220

80A

40A

-

-

-

-

-

-

-

-

STGP30NC60W vs STGP20V60F
STGP10NC60KD

STMicroelectronics

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~150°C TJ

Tube

PowerMESH™

e3

Active

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

Insulated Gate BIP Transistors

600V

65W

20A

STGP10

3

1

Single

25W

Standard

-

POWER CONTROL

6ns

N-CHANNEL

-

600V

20A

TO-220AB

600V

2V

23 ns

390V, 5A, 10 Ω, 15V

2.5V @ 15V, 5A

242 ns

19nC

30A

17ns/72ns

55μJ (on), 85μJ (off)

20V

7V

9.15mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ACTIVE (Last Updated: 8 months ago)

8 Weeks

ISOLATED

22 ns

-

-

-

-

STGP30NC60W vs STGP10NC60KD
STGP15M65DF2

STMicroelectronics

Through Hole

Through Hole

TO-220-3

-

-

-55°C~175°C TJ

Tube

-

-

Active

1 (Unlimited)

-

EAR99

-

-

-

136W

-

STGP15

-

-

-

-

Standard

-

-

-

-

-

2V

30A

-

650V

-

-

400V, 15A, 12 Ω, 15V

2V @ 15V, 15A

-

45nC

60A

24ns/93ns

90μJ (on), 450μJ (off)

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ACTIVE (Last Updated: 8 months ago)

30 Weeks

-

142 ns

NOT SPECIFIED

NOT SPECIFIED

136W

Trench Field Stop

STGP30NC60W vs STGP15M65DF2