STMicroelectronics STD15NF10T4

Name: STD15NF10T4
Brand: STMicroelectronics
SKU: 2478406-STD15NF10T4
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STD15NF10T4

Manufacturer:: STMicroelectronics

Ventron No:: 2478406-STD15NF10T4

Description:: MOSFET N-CH 100V 23A DPAK

ECAD Model:

Datasheet:: STD15NF10T4

Specifications

STMicroelectronics STD15NF10T4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STD15NF10T4.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Manufacturer Package Identifier
DPAK_0068772
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
STripFET™ II
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
65mOhm
Terminal Finish
Matte Tin (Sn) - annealed
Subcategory
FET General Purpose Power
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
23A
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
STD15
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
70W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
70W
Case Connection
DRAIN
Turn On Delay Time
60 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
65m Ω @ 12A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
870pF @ 25V
Current - Continuous Drain (Id) @ 25°C
23A Tc
Gate Charge (Qg) (Max) @ Vgs
40nC @ 10V
Rise Time
45ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
17 ns
Turn-Off Delay Time
49 ns
Continuous Drain Current (ID)
23A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Pulsed Drain Current-Max (IDM)
60A
Avalanche Energy Rating (Eas)
75 mJ
Max Junction Temperature (Tj)
175°C
Height
2.4mm
Length
6.6mm
Width
6.2mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STD15NF10T4 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 75 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 870pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 23A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 49 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 60A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 60 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 3V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.

STD15NF10T4 Features
the avalanche energy rating (Eas) is 75 mJ
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 49 ns
based on its rated peak drain current 60A.
a threshold voltage of 3V

STD15NF10T4 Applications
There are a lot of STMicroelectronics
STD15NF10T4 applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

STD15NF10T4 More Descriptions

Mosfet Transistor, N Channel, 23 A, 100 V, 60 Mohm, 10 V, 3 V |Stmicroelectronics STD15NF10T4
N-Channel 100V - 0.06Ohm - 23A - DPAK LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET
Trans MOSFET N-CH 100V 23A 3-Pin(2 Tab) DPAK T/R / MOSFET N-CH 100V 23A DPAK
N-channel 100 V, 0.06 Ohm typ., 23 A StripFET II Power MOSFET in a DPAK packageCiiva Crawler
N-Channel 100 V 0.065 Ohm Surface Mount STripFET II Power MosFet - TO-252-3
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Source Voltage Vds:100V; On Resistance Rds(on):0.065ohm; Rds(on)
Power Field-Effect Transistor, 15A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N; Transistor Polarity: N Channel; Continuous Drain Current Id: 23A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 70W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 23A; On State resistance @ Vgs = 10V: 65mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 100V; Voltage Vgs Max: 3V; Voltage Vgs Rds on Measurement: 10V

Product Comparison

The three parts on the right have similar specifications to STD15NF10T4.

Image

Part Number

Manufacturer

Lifecycle Status

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Manufacturer Package Identifier

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Max Junction Temperature (Tj)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Factory Lead Time

Published

Speed

Diode Type

Current - Reverse Leakage @ Vr

Voltage - Forward (Vf) (Max) @ If

Operating Temperature - Junction

Voltage - DC Reverse (Vr) (Max)

Material

Max Operating Temperature

Min Operating Temperature

Color

ELV

Wire/Cable Diameter

Cable Diameter

Legend

View Compare
STD15NF10T4

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

4.535924g

SILICON

DPAK_0068772

-55°C~175°C TJ

Tape & Reel (TR)

STripFET™ II

e3

Active

1 (Unlimited)

2

EAR99

65mOhm

Matte Tin (Sn) - annealed

FET General Purpose Power

100V

MOSFET (Metal Oxide)

GULL WING

260

23A

30

STD15

3

R-PSSO-G2

1

1

70W Tc

Single

ENHANCEMENT MODE

70W

DRAIN

60 ns

N-Channel

SWITCHING

65m Ω @ 12A, 10V

4V @ 250μA

870pF @ 25V

23A Tc

40nC @ 10V

45ns

10V

±20V

17 ns

49 ns

23A

3V

20V

100V

60A

75 mJ

175°C

2.4mm

6.6mm

6.2mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STD10150TR

SMC Diode Solutions

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-

-

-

Tape & Reel (TR)

-

-

Active

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

20 Weeks

2013

Fast Recovery =< 500ns, > 200mA (Io)

Schottky

150μA @ 150V

1.2V @ 10A

-55°C~150°C

150V

-

-

-

-

-

-

-

-

STD15NF10T4 vs STD10150TR
STD17W-X

TE Connectivity Raychem Cable Protection

ACTIVE (Last Updated: 2 days ago)

Cable

-

-

-

-

-

-

-40°C~106°C

50 per Pkg

STD

-

Active

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

15 Weeks

2006

-

-

-

-

-

-

Polyoxymethylene (POM), Halogen Free

106°C

-40°C

White

Compliant

11.5 mm

0.335 ~ 0.452 (8.50mm ~ 11.50mm)

X

STD15NF10T4 vs STD17W-X
STD15W-W

TE Connectivity Raychem Cable Protection

ACTIVE (Last Updated: 2 days ago)

-

-

-

-

-

-

-

-40°C~106°C

50 per Pkg

STD

-

Active

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

15 Weeks

2006

-

-

-

-

-

-

Polyoxymethylene (POM), Halogen Free

106°C

-40°C

White

Compliant

8.5 mm

0.228 ~ 0.335 (5.80mm ~ 8.50mm)

W

STD15NF10T4 vs STD15W-W