STMicroelectronics STB150NF55T4
- Part Number:
- STB150NF55T4
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2482305-STB150NF55T4
- Description:
- MOSFET N-CH 55V 120A D2PAK
- Datasheet:
- STB150NF55T4
STMicroelectronics STB150NF55T4 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STB150NF55T4.
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesSTripFET™ II
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance6mOhm
- Terminal FinishMatte Tin (Sn) - annealed
- SubcategoryFET General Purpose Power
- Voltage - Rated DC55V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)245
- Current Rating120A
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberSTB150N
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Power Dissipation-Max300W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation300W
- Case ConnectionDRAIN
- Turn On Delay Time35 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs6m Ω @ 60A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds4400pF @ 25V
- Current - Continuous Drain (Id) @ 25°C120A Tc
- Gate Charge (Qg) (Max) @ Vgs190nC @ 10V
- Rise Time180ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)80 ns
- Turn-Off Delay Time140 ns
- Continuous Drain Current (ID)60A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage55V
- Pulsed Drain Current-Max (IDM)480A
- Dual Supply Voltage55V
- Avalanche Energy Rating (Eas)850 mJ
- Nominal Vgs4 V
- Height6.35mm
- Length6.35mm
- Width6.35mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STB150NF55T4 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 850 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4400pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 60A.With a drain-source breakdown voltage of 55V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 55V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 140 ns.Peak drain current for this device is 480A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 35 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.
STB150NF55T4 Features
the avalanche energy rating (Eas) is 850 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 140 ns
based on its rated peak drain current 480A.
a threshold voltage of 4V
STB150NF55T4 Applications
There are a lot of STMicroelectronics
STB150NF55T4 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 850 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4400pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 60A.With a drain-source breakdown voltage of 55V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 55V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 140 ns.Peak drain current for this device is 480A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 35 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.
STB150NF55T4 Features
the avalanche energy rating (Eas) is 850 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 140 ns
based on its rated peak drain current 480A.
a threshold voltage of 4V
STB150NF55T4 Applications
There are a lot of STMicroelectronics
STB150NF55T4 applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
STB150NF55T4 More Descriptions
N-CHANNEL 55V - 0.005 OHM -120A D2PAK STripFET II MOSFET
Trans MOSFET N-CH 55V 120A Automotive 3-Pin(2 Tab) D2PAK T/R
Power Field-Effect Transistor, 120A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 55V, 120A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:55V; On Resistance Rds(on):5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:120A; Package / Case:D2-PAK; Power Dissipation Pd:300W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:55V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Trans MOSFET N-CH 55V 120A Automotive 3-Pin(2 Tab) D2PAK T/R
Power Field-Effect Transistor, 120A I(D), 55V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 55V, 120A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:55V; On Resistance Rds(on):5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:120A; Package / Case:D2-PAK; Power Dissipation Pd:300W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:55V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
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