Fairchild/ON Semiconductor SS8550DBU

Name: SS8550DBU
Brand: Fairchild/ON Semiconductor
SKU: 3553734-SS8550DBU
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SS8550DBU

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3553734-SS8550DBU

Description:: TRANS PNP 25V 1.5A TO-92

ECAD Model:

Datasheet:: SS8550DBU

Part Pictures

Specifications

Fairchild/ON Semiconductor SS8550DBU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor SS8550DBU.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
7 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Weight
179mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2017
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-25V
Max Power Dissipation
1W
Terminal Position
BOTTOM
Current Rating
-1.5A
Frequency
200MHz
Base Part Number
SS8550
Number of Elements
1
Element Configuration
Single
Power Dissipation
1W
Transistor Application
AMPLIFIER
Gain Bandwidth Product
200MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
25V
Max Collector Current
1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 80mA, 800mA
Collector Emitter Breakdown Voltage
25V
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
-280mV
Collector Base Voltage (VCBO)
-40V
Emitter Base Voltage (VEBO)
-6V
hFE Min
85
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

SS8550DBU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 160 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of -280mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 200MHz in the part.When collector current reaches its maximum, it can reach 1.5A volts.

SS8550DBU Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -280mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at -6V
the current rating of this device is -1.5A
a transition frequency of 200MHz

SS8550DBU Applications
There are a lot of ON Semiconductor
SS8550DBU applications of single BJT transistors.

Inverter
Interface
Driver
Muting

SS8550DBU More Descriptions

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TRANSISTOR, BIPOL, PNP, -25V, TO-226AA-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -25V; Transition Frequency ft: 200MHz; Power Dissipation Pd: 1W; DC Collector Current: -1.5A; DC Current Gain hFE: 160hFE;