Fairchild/ON Semiconductor SS8050DTA
- Part Number:
- SS8050DTA
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2462994-SS8050DTA
- Description:
- TRANS NPN 25V 1.5A TO-92
- ECAD Model:
-
- Datasheet:
- SS8050DTA
Fairchild/ON Semiconductor SS8050DTA technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor SS8050DTA.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time6 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins3
- Weight240mg
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Box (TB)
- Published2007
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC25V
- Max Power Dissipation1W
- Terminal PositionBOTTOM
- Current Rating1.5A
- Frequency100MHz
- Base Part NumberSS8050
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation1W
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product100MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)25V
- Max Collector Current1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 80mA, 800mA
- Collector Emitter Breakdown Voltage25V
- Transition Frequency190MHz
- Collector Emitter Saturation Voltage500mV
- Max Breakdown Voltage25V
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)6V
- hFE Min85
- Height4.58mm
- Length4.58mm
- Width3.86mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SS8050DTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 100mA 1V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 80mA, 800mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1.5A.In the part, the transition frequency is 190MHz.This device can take an input voltage of 25V volts before it breaks down.A maximum collector current of 1.5A volts can be achieved.
SS8050DTA Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 190MHz
SS8050DTA Applications
There are a lot of ON Semiconductor
SS8050DTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 100mA 1V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 80mA, 800mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1.5A.In the part, the transition frequency is 190MHz.This device can take an input voltage of 25V volts before it breaks down.A maximum collector current of 1.5A volts can be achieved.
SS8050DTA Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 190MHz
SS8050DTA Applications
There are a lot of ON Semiconductor
SS8050DTA applications of single BJT transistors.
Inverter
Interface
Driver
Muting
SS8050DTA More Descriptions
Bipolar Transistor BJT NPN Epitaxial Silicon 25V 1500mA 100MHz 1W TO-92-3
Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
SS8050DTA ON Semiconductor / Fairchild NPN Transistor, 1.5 A, 25 V, 3-Pin TO-92 RoHS
SS8050 Series 25 V 1.5 A Through Hole NPN Epitaxial Silicon Transistor - TO-92.3
Trans GP BJT NPN 25V 1.5A 1000mW 3-Pin TO-92 Fan-Fold
Bipolar Transistors - BJT NPN/25V/1.5A/160-300
TO-92-3L Bipolar Transistors - BJT ROHS
TRANSISTOR, NPN, 25V, 1.5A; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 25V; Transition Frequency ft: -; Power Dissipation Pd: 1W; DC Collector Current: 1.5A; DC Current Gain hFE: 40hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 500mV; Current Ic Continuous a Max: 800mA; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 160; Termination Type: Through Hole; Transistor Type: General Purpose
Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
SS8050DTA ON Semiconductor / Fairchild NPN Transistor, 1.5 A, 25 V, 3-Pin TO-92 RoHS
SS8050 Series 25 V 1.5 A Through Hole NPN Epitaxial Silicon Transistor - TO-92.3
Trans GP BJT NPN 25V 1.5A 1000mW 3-Pin TO-92 Fan-Fold
Bipolar Transistors - BJT NPN/25V/1.5A/160-300
TO-92-3L Bipolar Transistors - BJT ROHS
TRANSISTOR, NPN, 25V, 1.5A; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 25V; Transition Frequency ft: -; Power Dissipation Pd: 1W; DC Collector Current: 1.5A; DC Current Gain hFE: 40hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 500mV; Current Ic Continuous a Max: 800mA; Gain Bandwidth ft Typ: 100MHz; Hfe Min: 160; Termination Type: Through Hole; Transistor Type: General Purpose
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