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SS2H10HE3/52T

Vishay Semiconductor Diodes Division SS2H10HE3/52T

Part Number:
SS2H10HE3/52T
Manufacturer:
Vishay Semiconductor Diodes Division
Ventron No:
2435565-SS2H10HE3/52T
Description:
DIODE SCHOTTKY 100V 2A DO214AA
ECAD Model:
Datasheet:
SS2H9, SS2H10

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Specifications
Vishay Semiconductor Diodes Division SS2H10HE3/52T technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division SS2H10HE3/52T.
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    DO-214AA, SMB
  • Number of Pins
    2
  • Diode Element Material
    SILICON
  • Packaging
    Tape & Reel (TR)
  • Series
    Automotive, AEC-Q101
  • Published
    2016
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -65°C
  • Additional Feature
    FREE WHEELING DIODE, LOW POWER LOSS, LOW LEAKAGE CURRENT
  • HTS Code
    8541.10.00.80
  • Subcategory
    Rectifier Diodes
  • Terminal Position
    DUAL
  • Terminal Form
    C BEND
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    SS2H10
  • Pin Count
    2
  • Number of Elements
    1
  • Element Configuration
    Single
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Schottky
  • Current - Reverse Leakage @ Vr
    10μA @ 100V
  • Voltage - Forward (Vf) (Max) @ If
    790mV @ 2A
  • Forward Current
    2A
  • Max Reverse Leakage Current
    10μA
  • Operating Temperature - Junction
    -65°C~175°C
  • Max Surge Current
    75A
  • Output Current-Max
    2A
  • Application
    EFFICIENCY
  • Forward Voltage
    790mV
  • Max Reverse Voltage (DC)
    100V
  • Average Rectified Current
    2A
  • Number of Phases
    1
  • Peak Reverse Current
    10μA
  • Max Repetitive Reverse Voltage (Vrrm)
    100V
  • Peak Non-Repetitive Surge Current
    75A
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
SS2H10HE3/52T Overview
A reverse leakage current of 10μA volts can be generated by this device.A rectified current of 2A volts is averaged for this device.A value of 2A is the maximum forward current that can be allowed.75A is the maximum value of surge current.Phase diode rectifier is possible to produce a maximum output current by setting the output current to 2A.As indicated by the data chart in the datasheets, the peak reverse is 10μA.

SS2H10HE3/52T Features
a maximal reverse leakage current of 10μA volts
an average rectified current of 2A volts
2A is the maximum value
the peak reverse is 10μA


SS2H10HE3/52T Applications
There are a lot of Vishay Semiconductor Diodes Division
SS2H10HE3/52T applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
SS2H10HE3/52T More Descriptions
SS2H10HE3/52T, SMT Schottky Diode, 100V 2A, 2-Pin DO-214AA | Siliconix / Vishay SS2H10HE3/52T
Schottky Diodes & Rectifiers 100 Volt 2.0 Amp 75 Amp IFSM
Diode Schottky 100V 2A 2-Pin SMB T/R
Compliant Surface Mount Tape & Reel (TR) SMB 2 Tin 2 A 790 mV
2A,100V,HIGH BARRIER SKY REC, DO-214AA(SMB)
Diode; Diode Type:Schottky; Repetitive Reverse Voltage Max Vrrm:100V; Forward Current If(AV):2A; Forward Voltage VF Max:790mV; Forward Surge Current Ifsm Max:75A; Operating Temperature Range:-65°C to 175°C ;RoHS Compliant: Yes
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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