Vishay Semiconductor Diodes Division SM5S33HE3/2D
- Part Number:
- SM5S33HE3/2D
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Ventron No:
- 999650-SM5S33HE3/2D
- Description:
- TVS DIODE 33VWM 59VC DO218AB
- Datasheet:
- SM5S10 - SM5S36A
Vishay Semiconductor Diodes Division SM5S33HE3/2D technical specifications, attributes, parameters and parts with similar specifications to Vishay Semiconductor Diodes Division SM5S33HE3/2D.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseDO-218AB
- Number of Pins2
- Diode Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- Published2013
- SeriesAutomotive, AEC-Q101, PAR®
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations1
- ECCN CodeEAR99
- Terminal FinishTin (Sn) - with Nickel (Ni) barrier
- ApplicationsAutomotive
- Additional FeatureHIGH RELIABILITY, LOW LEAKAGE CURRENT
- SubcategoryTransient Suppressors
- Max Power Dissipation3.6kW
- TechnologyAVALANCHE
- Terminal FormC BEND
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberSM5S
- Pin Count1
- Operating Supply Voltage33V
- Number of Elements1
- Element ConfigurationSingle
- Power Line ProtectionNo
- Power - Peak Pulse3600W 3.6kW
- Max Reverse Leakage Current10μA
- Voltage - Clamping (Max) @ Ipp59V
- Clamping Voltage59V
- Peak Pulse Current61A
- Reverse Standoff Voltage33V
- Max Surge Current61A
- Peak Pulse Power3.6kW
- DirectionUnidirectional
- Test Current5mA
- Unidirectional Channels1
- Breakdown Voltage36.7V
- Non-rep Peak Rev Power Dis-Max3600W
- RoHS StatusROHS3 Compliant
SM5S33HE3/2D Overview
This product is manufactured by Vishay Semiconductor Diodes Division and belongs to the category of TVS - Diodes. The images we provide are for reference only, for detailed product information please see specification sheet SM5S33HE3/2D or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SM5S33HE3/2D. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Vishay Semiconductor Diodes Division and belongs to the category of TVS - Diodes. The images we provide are for reference only, for detailed product information please see specification sheet SM5S33HE3/2D or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SM5S33HE3/2D. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SM5S33HE3/2D More Descriptions
Diode TVS Single Uni-Dir 33V 3.6KW 2-Pin DO-218AB T/R
TVS 3600W 33V 10% DO-218AB
5W,33V 10%,SMD PAR
TVS 3600W 33V 10% DO-218AB
5W,33V 10%,SMD PAR
The three parts on the right have similar specifications to SM5S33HE3/2D.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsDiode Element MaterialOperating TemperaturePackagingPublishedSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishApplicationsAdditional FeatureSubcategoryMax Power DissipationTechnologyTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountOperating Supply VoltageNumber of ElementsElement ConfigurationPower Line ProtectionPower - Peak PulseMax Reverse Leakage CurrentVoltage - Clamping (Max) @ IppClamping VoltagePeak Pulse CurrentReverse Standoff VoltageMax Surge CurrentPeak Pulse PowerDirectionTest CurrentUnidirectional ChannelsBreakdown VoltageNon-rep Peak Rev Power Dis-MaxRoHS StatusSupplier Device PackageMax Operating TemperatureMin Operating TemperatureCompositionPolarityNumber of ChannelsVoltage - Breakdown (Min)Current - Peak Pulse (10/1000μs)Voltage - Reverse Standoff (Typ)Number of Unidirectional ChannelsRadiation HardeningView Compare
-
SM5S33HE3/2DSurface MountSurface MountDO-218AB2SILICON-55°C~175°C TJTape & Reel (TR)2013Automotive, AEC-Q101, PAR®e3yesObsolete1 (Unlimited)1EAR99Tin (Sn) - with Nickel (Ni) barrierAutomotiveHIGH RELIABILITY, LOW LEAKAGE CURRENTTransient Suppressors3.6kWAVALANCHEC BEND26040SM5S133V1SingleNo3600W 3.6kW10μA59V59V61A33V61A3.6kWUnidirectional5mA136.7V3600WROHS3 Compliant------------
-
Surface MountSurface MountDO-218AB2SILICON-55°C~175°C TJTape & Reel (TR)2013Automotive, AEC-Q101, PAR®e3yesObsolete1 (Unlimited)1EAR99Tin (Sn) - with Nickel (Ni) barrierAutomotiveHIGH RELIABILITY, LOW LEAKAGE CURRENTTransient Suppressors3.6kWAVALANCHEC BEND26040SM5S120V1SingleNo3600W 3.6kW10μA35.8V35.8V101A20V101A3.6kWUnidirectional5mA122.2V3600WROHS3 Compliant-----------
-
Surface MountSurface MountDO-218AB2SILICON-55°C~175°C TJTape & Reel (TR)2013Automotive, AEC-Q101, PAR®e3yesObsolete1 (Unlimited)1EAR99Tin (Sn) - with Nickel (Ni) barrierAutomotiveHIGH RELIABILITY, LOW LEAKAGE CURRENTTransient Suppressors3.6kWAVALANCHEC BEND26040SM5S130V1SingleNo3600W 3.6kW10μA53.5V53.5V67A30V67A3.6kWUnidirectional5mA133.3V3600WROHS3 Compliant-----------
-
Surface MountSurface MountDO-218AB---55°C~175°C TJTape & Reel (TR)2013PAR®--Obsolete1 (Unlimited)---General Purpose-------SM5S-30V-SingleNo3600W 3.6kW10μA48.4V48.4V74A30V500A3.6kWUnidirectional5mA133.3V-ROHS3 CompliantDO-218AB175°C-55°CZenerUnidirectional133.3V74A30V1No
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
25 September 2023
A Comparison of 2N7000 and BS170 N-Channel Mosfet Transistors
Ⅰ. What is a MOS field effect transistor?Ⅱ. Overview of 2N7000Ⅲ. Overview of BS170Ⅳ. 2N7000 vs BS170: PCB footprintsⅤ. 2N7000 vs BS170: Technical parametersⅥ. 2N7000 vs BS170: FeaturesⅦ.... -
26 September 2023
W25Q128JVSIQ Footprint, Features and Package
Ⅰ. W25Q128JVSIQ descriptionⅡ. W25Q128JVSIQ symbol and footprintⅢ. Technical parametersⅣ. Features of W25Q128JVSIQⅤ. Pin configuration of W25Q128JVSIQⅥ. Package of W25Q128JVSIQⅦ. What are the characteristics of the SPI interface of... -
26 September 2023
TDA7560 Audio Power Amplifier: Symbol, Features and Application
Ⅰ. Overview of TDA7560Ⅱ. Pin connection, symbol and footprint of TDA7560Ⅲ. Technical parametersⅣ. Features of TDA7560Ⅴ. Application of TDA7560Ⅵ. Are TDA7560 and TDA7851 interchangeable?Ⅶ. TDA7560 car power amplifier... -
27 September 2023
BC640 PNP Transistor: Features, Package and Other Details
Ⅰ. Overview of BC640Ⅱ. Symbol and footprint of BC640Ⅲ. Technical parametersⅣ. Features of BC640Ⅴ. Pinout and package of BC640Ⅵ. Application of BC640Ⅶ. How to optimize the performance of...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.