VISHAY SI4108DY-T1-GE3

Name: SI4108DY-T1-GE3
Brand: VISHAY
SKU: 6361358-SI4108DY-T1-GE3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI4108DY-T1-GE3

Manufacturer:: VISHAY

Ventron No:: 6361358-SI4108DY-T1-GE3

Description:

ECAD Model:

Datasheet:: SI4108DY-T1-GE3

Specifications

VISHAY SI4108DY-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to VISHAY SI4108DY-T1-GE3.

Vgs(th) (Max) @ Id:
4V @ 250µA
Vgs (Max):
±20V
Technology:
MOSFET (Metal Oxide)
Supplier Device Package:
8-SO
Series:
TrenchFET®
Rds On (Max) @ Id, Vgs:
9.8 mOhm @ 13.8A, 10V
Power Dissipation (Max):
3.6W (Ta), 7.8W (Tc)
Packaging:
Original-Reel®
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Other Names:
SI4108DY-T1-GE3DKR
Operating Temperature:
-55°C ~ 150°C (TJ)
Mounting Type:
Surface Mount
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:
2100pF @ 38V
Gate Charge (Qg) (Max) @ Vgs:
54nC @ 10V
FET Type:
N-Channel
FET Feature:
-
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
75V
Detailed Description:
N-Channel 75V 20.5A (Tc) 3.6W (Ta), 7.8W (Tc) Surface Mount 8-SO
Current - Continuous Drain (Id) @ 25°C:
20.5A (Tc)

Description

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SI4108DY-T1-GE3 More Descriptions

Trans MOSFET N-CH 75V 13.8A 8-Pin SOIC N T/R
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:20500mA; Drain Source Voltage, Vds:75V; On Resistance, Rds(on):0.0098ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:20V; Power Dissipation, Pd:3.6W ;RoHS Compliant: Yes
MOSFET, N-CH, 75V, 20.5A, SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:20.5A; Drain Source Voltage Vds:75V; On Resistance Rds(on):8.2mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:7.8W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:20.5A; Power Dissipation Pd:7.8W; Voltage Vgs Max:20V

Certification