Vishay Siliconix SI1032R-T1-GE3

SI1032R-T1-GE3 Overview
The drain current is the maximum continuous current the device can conduct, and this device has 200mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 20V, and this device has a drainage-to-source breakdown voltage of 20VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 50 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 50 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 6V to 1.In this case, the threshold voltage of the transistor is 900mV, which means that it will not activate any of its functions when its threshold voltage reaches 900mV.Using drive voltage (1.5V 4.5V), this device contributes to a reduction in overall power consumption.

SI1032R-T1-GE3 Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 50 ns
a threshold voltage of 900mV


SI1032R-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI1032R-T1-GE3 applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies