Cypress Semiconductor Corp S34ML01G100BHI000
- Part Number:
- S34ML01G100BHI000
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3226914-S34ML01G100BHI000
- Description:
- IC FLASH 1GBIT 25NS 63BGA
- Datasheet:
- S34ML01,02,04G1
Cypress Semiconductor Corp S34ML01G100BHI000 technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp S34ML01G100BHI000.
- Factory Lead Time6 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case63-VFBGA
- Number of Pins63
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Published2014
- SeriesML-1
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations63
- HTS Code8542.32.00.51
- TechnologyFLASH - NAND
- Voltage - Supply2.7V~3.6V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage3.3V
- Terminal Pitch0.8mm
- Operating Supply Voltage3.3V
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size1Gb 128M x 8
- Nominal Supply Current30mA
- Memory TypeNon-Volatile
- Access Time20 ns
- Memory FormatFLASH
- Memory InterfaceParallel
- Data Bus Width8b
- Organization128MX8
- Write Cycle Time - Word, Page25ns
- Address Bus Width28b
- Density1 Gb
- Standby Current-Max0.00005A
- Sync/AsyncAsynchronous
- Word Size8b
- Programming Voltage3V
- Data PollingNO
- Toggle BitNO
- Command User InterfaceYES
- Number of Sectors/Size1K
- Sector Size128K
- Page Size2kB
- Ready/BusyYES
- Height1mm
- Length11mm
- Width9mm
- Radiation HardeningNo
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
S34ML01G100BHI000 Overview
This component is manufactured by Cypress Semiconductor Corp, a well-known brand in the electronics industry. It falls under the category of Memory chips, which are essential for storing and retrieving data in electronic devices. The Moisture Sensitivity Level (MSL) for this part is 3, meaning it can withstand exposure to moisture for up to 168 hours. The Voltage - Supply range for this chip is 2.7V to 3.6V, with an Operating Supply Voltage of 3.3V. The minimum supply voltage required for this chip is 2.7V. It uses a Parallel Memory Interface, which allows for faster data transfer. The maximum standby current for this chip is 0.00005A, making it energy efficient. The chip can operate in both Sync and Async modes, giving users flexibility in their applications. It has a word size of 8 bits, meaning it can process data in chunks of 8 bits at a time. The Ready/Busy feature indicates that the chip is capable of signaling when it is ready to receive or send data. The width of this chip is 9mm, making it compact and suitable for use in smaller electronic devices.
S34ML01G100BHI000 Features
Package / Case: 63-VFBGA
63 Pins
Operating Supply Voltage:3.3V
S34ML01G100BHI000 Applications
There are a lot of Cypress Semiconductor Corp S34ML01G100BHI000 Memory applications.
mainframes
data buffer
cell phones
eDRAM
networking
printers
eSRAM
multimedia computers
servers
networks
This component is manufactured by Cypress Semiconductor Corp, a well-known brand in the electronics industry. It falls under the category of Memory chips, which are essential for storing and retrieving data in electronic devices. The Moisture Sensitivity Level (MSL) for this part is 3, meaning it can withstand exposure to moisture for up to 168 hours. The Voltage - Supply range for this chip is 2.7V to 3.6V, with an Operating Supply Voltage of 3.3V. The minimum supply voltage required for this chip is 2.7V. It uses a Parallel Memory Interface, which allows for faster data transfer. The maximum standby current for this chip is 0.00005A, making it energy efficient. The chip can operate in both Sync and Async modes, giving users flexibility in their applications. It has a word size of 8 bits, meaning it can process data in chunks of 8 bits at a time. The Ready/Busy feature indicates that the chip is capable of signaling when it is ready to receive or send data. The width of this chip is 9mm, making it compact and suitable for use in smaller electronic devices.
S34ML01G100BHI000 Features
Package / Case: 63-VFBGA
63 Pins
Operating Supply Voltage:3.3V
S34ML01G100BHI000 Applications
There are a lot of Cypress Semiconductor Corp S34ML01G100BHI000 Memory applications.
mainframes
data buffer
cell phones
eDRAM
networking
printers
eSRAM
multimedia computers
servers
networks
S34ML01G100BHI000 More Descriptions
S34ML01G1 Series 1 Gb (128 M x 8) 3 V SMT Embedded NAND Flash Memory - VFBGA-63
SLC NAND Flash Parallel 3V/3.3V 1Gbit 128M x 8bit 20ns 63-Pin BGA Tray
MEMORY, FLASH, 1GBIT, 63BGA; Memory Type:Flash - NAND; Memory Size:1Gbit; Memory Configuration:128M x 8bit; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:BGA; No. of Pins:63; Access Time:25ns; IC Interface Type:Parallel; Operating Temperature Min:-40°C; Operating Temperature Max:85°C; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2013)
SLC NAND Flash Parallel 3V/3.3V 1Gbit 128M x 8bit 20ns 63-Pin BGA Tray
MEMORY, FLASH, 1GBIT, 63BGA; Memory Type:Flash - NAND; Memory Size:1Gbit; Memory Configuration:128M x 8bit; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:BGA; No. of Pins:63; Access Time:25ns; IC Interface Type:Parallel; Operating Temperature Min:-40°C; Operating Temperature Max:85°C; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2013)
The three parts on the right have similar specifications to S34ML01G100BHI000.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsHTS CodeTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchOperating Supply VoltageSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeNominal Supply CurrentMemory TypeAccess TimeMemory FormatMemory InterfaceData Bus WidthOrganizationWrite Cycle Time - Word, PageAddress Bus WidthDensityStandby Current-MaxSync/AsyncWord SizeProgramming VoltageData PollingToggle BitCommand User InterfaceNumber of Sectors/SizeSector SizePage SizeReady/BusyHeightLengthWidthRadiation HardeningREACH SVHCRoHS StatusLead FreeSurface MountJESD-609 CodeTerminal FinishTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeOperating Temperature (Max)Operating Temperature (Min)Temperature GradeOperating ModeMemory WidthMemory DensityParallel/SerialMemory IC TypeHeight Seated (Max)View Compare
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S34ML01G100BHI0006 WeeksSurface MountSurface Mount63-VFBGA63-40°C~85°C TATray2014ML-1Discontinued3 (168 Hours)638542.32.00.51FLASH - NAND2.7V~3.6VBOTTOM13.3V0.8mm3.3V3.6V2.7V1Gb 128M x 830mANon-Volatile20 nsFLASHParallel8b128MX825ns28b1 Gb0.00005AAsynchronous8b3VNONOYES1K128K2kBYES1mm11mm9mmNoNo SVHCROHS3 CompliantLead Free-----------------
-
------Tube--Active3 (168 Hours)48-CMOS-DUAL13.3V0.5mm-3.6V2.7V-------512MX8------3V--------18.4mm12mm--RoHS Compliant-YESe3Matte Tin (Sn)GULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G4885°C-40°CINDUSTRIALASYNCHRONOUS84294967296 bitPARALLELFLASH1.2mm
-
------Tray--Active3 (168 Hours)63-CMOS-BOTTOM13V0.8mm-3.6V2.7V-------1GX8------3V--------11mm9mm--RoHS Compliant-YES--BALLNOT SPECIFIEDNOT SPECIFIEDR-PBGA-B6385°C-40°CINDUSTRIALASYNCHRONOUS88589934592 bitPARALLELFLASH1mm
-
------Tray--Active3 (168 Hours)48-CMOS-DUAL13.3V0.5mm-3.6V2.7V-------1GX8------3V--------18.4mm12mm--RoHS Compliant-YESe3Matte Tin (Sn)GULL WING--R-PDSO-G4885°C-40°CINDUSTRIALASYNCHRONOUS88589934592 bitPARALLELFLASH1.2mm
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