Cypress Semiconductor Corp S29GL512T11DHIV20
- Part Number:
- S29GL512T11DHIV20
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3229673-S29GL512T11DHIV20
- Description:
- IC FLASH 512MBIT 110NS 64BGA
- ECAD Model:
-
- Datasheet:
- S29GL512T11DHIV20
Cypress Semiconductor Corp S29GL512T11DHIV20 technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp S29GL512T11DHIV20.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case64-LBGA
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Published2016
- SeriesGL-T
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations64
- HTS Code8542.32.00.51
- TechnologyFLASH - NOR
- Voltage - Supply2.7V~3.6V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch1mm
- JESD-30 CodeS-PBGA-B64
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size512Mb 64M x 8
- Memory TypeNon-Volatile
- Operating ModeASYNCHRONOUS
- Access Time110ns
- Memory FormatFLASH
- Memory InterfaceParallel
- Organization32MX16
- Memory Width16
- Write Cycle Time - Word, Page60ns
- Memory Density536870912 bit
- Programming Voltage2.7V
- Alternate Memory Width8
- Height Seated (Max)1.4mm
- Length9mm
- Width9mm
- RoHS StatusROHS3 Compliant
S29GL512T11DHIV20 Overview
Cypress Semiconductor Corp is the brand of this part, which falls under the Memory category. Specifically, it is a Memory chip with a 64-LBGA Package/Case. The technology used is FLASH - NOR and the required Voltage - Supply is 2.7V~3.6V. The Terminal Position is BOTTOM and the Operating Mode is ASYNCHRONOUS. It has a FLASH Memory format and uses a Parallel Memory Interface with a Memory Width of 16. The Write Cycle Time for a Word or Page is 60ns and the length of the chip is 9mm.
S29GL512T11DHIV20 Features
Package / Case: 64-LBGA
S29GL512T11DHIV20 Applications
There are a lot of Cypress Semiconductor Corp S29GL512T11DHIV20 Memory applications.
networks
supercomputers
embedded logic
servers
personal digital assistants
data buffer
hard disk drive (HDD)
workstations,
main computer memory
multimedia computers
Cypress Semiconductor Corp is the brand of this part, which falls under the Memory category. Specifically, it is a Memory chip with a 64-LBGA Package/Case. The technology used is FLASH - NOR and the required Voltage - Supply is 2.7V~3.6V. The Terminal Position is BOTTOM and the Operating Mode is ASYNCHRONOUS. It has a FLASH Memory format and uses a Parallel Memory Interface with a Memory Width of 16. The Write Cycle Time for a Word or Page is 60ns and the length of the chip is 9mm.
S29GL512T11DHIV20 Features
Package / Case: 64-LBGA
S29GL512T11DHIV20 Applications
There are a lot of Cypress Semiconductor Corp S29GL512T11DHIV20 Memory applications.
networks
supercomputers
embedded logic
servers
personal digital assistants
data buffer
hard disk drive (HDD)
workstations,
main computer memory
multimedia computers
S29GL512T11DHIV20 More Descriptions
FLASH - NOR Memory IC 512Mb (64M x 8) Parallel 110ns 64-FBGA (9x9)
NOR Flash 512Mbit 32M X 16Bit/64M X 8Bit Parallel 110ns 64-Pin FBGA
IC FLASH 512MBIT PARALLEL 64FBGA
Nor/Tray |Cypress Infineon Technologies S29GL512T11DHIV20
PARALLEL NOR MIRRORBIT FLASH, 51
NOR Flash 512Mbit 32M X 16Bit/64M X 8Bit Parallel 110ns 64-Pin FBGA
IC FLASH 512MBIT PARALLEL 64FBGA
Nor/Tray |Cypress Infineon Technologies S29GL512T11DHIV20
PARALLEL NOR MIRRORBIT FLASH, 51
The three parts on the right have similar specifications to S29GL512T11DHIV20.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsHTS CodeTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityProgramming VoltageAlternate Memory WidthHeight Seated (Max)LengthWidthRoHS StatusMountNumber of PinsJESD-609 CodeECCN CodeTerminal FinishPeak Reflow Temperature (Cel)Reflow Temperature-Max (s)Power SuppliesNominal Supply CurrentAddress Bus WidthDensityStandby Current-MaxSync/AsyncWord SizeData PollingToggle BitCommand User InterfaceNumber of Sectors/SizeSector SizePage SizeReady/BusyCommon Flash InterfaceRadiation HardeningSupplier Device PackageView Compare
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S29GL512T11DHIV2013 WeeksSurface Mount64-LBGAYES-40°C~85°C TATray2016GL-TActive3 (168 Hours)648542.32.00.51FLASH - NOR2.7V~3.6VBOTTOM13V1mmS-PBGA-B643.6V2.7V512Mb 64M x 8Non-VolatileASYNCHRONOUS110nsFLASHParallel32MX161660ns536870912 bit2.7V81.4mm9mm9mmROHS3 Compliant------------------------- -
13 WeeksSurface Mount64-LBGA--40°C~85°C TATray2015GL-SActive3 (168 Hours)648542.32.00.51FLASH - NOR2.7V~3.6VBOTTOM13V1mm-3.6V2.7V1Gb 64M x 16Non-Volatile-100nsFLASHParallel-1660ns-3V-1.4mm13mm-ROHS3 CompliantSurface Mount64e13A991.B.1.ATin/Silver/Copper (Sn/Ag/Cu)260403/3.3V60mA26b1 Gb0.0001AAsynchronous16bYESYESYES1K64K32BYESYESNo-
-
-Surface Mount64-LBGA--40°C~85°C TATape & Reel (TR)2015GL-PObsolete3 (168 Hours)--FLASH - NOR3V~3.6V-------1Gb 128M x 8Non-Volatile-110nsFLASHParallel--110ns------ROHS3 Compliant-----------------------64-Fortified BGA (13x11)
-
-Surface Mount56-TFSOP (0.724, 18.40mm Width)--40°C~85°C TATray2016GL-PObsolete3 (168 Hours)--FLASH - NOR3V~3.6V-------1Gb 128M x 8Non-Volatile-130nsFLASHParallel--130ns------ROHS3 Compliant-----------------------56-TSOP
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