Cypress Semiconductor Corp S29GL01GT12TFN010
- Part Number:
- S29GL01GT12TFN010
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3235369-S29GL01GT12TFN010
- Description:
- IC 1GB MEMORY
- ECAD Model:
-
- Datasheet:
- S29GL01GT12TFN010
Cypress Semiconductor Corp S29GL01GT12TFN010 technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp S29GL01GT12TFN010.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case56-TFSOP (0.724, 18.40mm Width)
- Surface MountYES
- Operating Temperature-40°C~125°C TA
- PackagingTray
- Published2016
- SeriesGL-T
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations56
- HTS Code8542.32.00.51
- TechnologyFLASH - NOR
- Voltage - Supply2.7V~3.6V
- Terminal PositionDUAL
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch0.5mm
- JESD-30 CodeR-PDSO-G56
- Supply Voltage-Max (Vsup)3.6V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size1Gb 128M x 8
- Memory TypeNon-Volatile
- Operating ModeASYNCHRONOUS
- Access Time120ns
- Memory FormatFLASH
- Memory InterfaceParallel
- Organization64MX16
- Memory Width16
- Write Cycle Time - Word, Page60ns
- Memory Density1073741824 bit
- Programming Voltage2.7V
- Height Seated (Max)1.2mm
- Length18.4mm
- Width14mm
- RoHS StatusROHS3 Compliant
S29GL01GT12TFN010 Overview
The product, published in 2016, is currently active in the market. It falls under the HTS Code 8542.32.00.51, indicating its classification as an electronic integrated circuit. The technology used in this product is FLASH - NOR, which offers non-volatile storage capabilities. It requires a voltage supply ranging from 2.7V to 3.6V for proper functioning. The JESD-30 Code for this product is R-PDSO-G56, indicating its package type. The organization of this product is 64MX16, referring to its memory capacity. The programming voltage required for this product is 2.7V. In terms of physical dimensions, it has a length of 18.4mm and a width of 14mm.
S29GL01GT12TFN010 Features
Package / Case: 56-TFSOP (0.724, 18.40mm Width)
S29GL01GT12TFN010 Applications
There are a lot of Cypress Semiconductor Corp S29GL01GT12TFN010 Memory applications.
nonvolatile BIOS memory
graphics card
multimedia computers
supercomputers
networks
personal digital assistants
personal computers
cell phones
embedded logic
data buffer
The product, published in 2016, is currently active in the market. It falls under the HTS Code 8542.32.00.51, indicating its classification as an electronic integrated circuit. The technology used in this product is FLASH - NOR, which offers non-volatile storage capabilities. It requires a voltage supply ranging from 2.7V to 3.6V for proper functioning. The JESD-30 Code for this product is R-PDSO-G56, indicating its package type. The organization of this product is 64MX16, referring to its memory capacity. The programming voltage required for this product is 2.7V. In terms of physical dimensions, it has a length of 18.4mm and a width of 14mm.
S29GL01GT12TFN010 Features
Package / Case: 56-TFSOP (0.724, 18.40mm Width)
S29GL01GT12TFN010 Applications
There are a lot of Cypress Semiconductor Corp S29GL01GT12TFN010 Memory applications.
nonvolatile BIOS memory
graphics card
multimedia computers
supercomputers
networks
personal digital assistants
personal computers
cell phones
embedded logic
data buffer
S29GL01GT12TFN010 More Descriptions
NOR Flash Parallel 3V/3.3V 1G-bit 128M x 8/64M x 16 120ns 56-Pin TSOP Tray
IC FLASH 1GBIT PARALLEL 56TSOP
Nor/Tray |Cypress Infineon Technologies S29GL01GT12TFN010
IC FLASH 1GBIT PARALLEL 56TSOP
Nor/Tray |Cypress Infineon Technologies S29GL01GT12TFN010
The three parts on the right have similar specifications to S29GL01GT12TFN010.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsHTS CodeTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchJESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageMemory DensityProgramming VoltageHeight Seated (Max)LengthWidthRoHS StatusSupplier Device PackageContact PlatingMountNumber of PinsMax Operating TemperatureMin Operating TemperatureInterfaceMax Supply VoltageMin Supply VoltageDensityRadiation HardeningView Compare
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S29GL01GT12TFN01013 WeeksSurface Mount56-TFSOP (0.724, 18.40mm Width)YES-40°C~125°C TATray2016GL-TActive3 (168 Hours)568542.32.00.51FLASH - NOR2.7V~3.6VDUAL13V0.5mmR-PDSO-G563.6V2.7V1Gb 128M x 8Non-VolatileASYNCHRONOUS120nsFLASHParallel64MX161660ns1073741824 bit2.7V1.2mm18.4mm14mmROHS3 Compliant------------ -
-Surface Mount64-LBGA--40°C~85°C TATape & Reel (TR)2015GL-PObsolete3 (168 Hours)--FLASH - NOR3V~3.6V-------1Gb 128M x 8Non-Volatile-110nsFLASHParallel--110ns-----ROHS3 Compliant64-Fortified BGA (13x11)----------
-
-Surface Mount56-TFSOP (0.724, 18.40mm Width)--40°C~85°C TATray2016GL-PObsolete3 (168 Hours)--FLASH - NOR3V~3.6V-------1Gb 128M x 8Non-Volatile-110nsFLASHParallel--110ns-----ROHS3 Compliant56-TSOPTinSurface Mount5685°C-40°CParallel3.6V3V1 GbNo
-
-Surface Mount56-TFSOP (0.724, 18.40mm Width)--40°C~85°C TATray2016GL-PObsolete3 (168 Hours)--FLASH - NOR3V~3.6V-------1Gb 128M x 8Non-Volatile-130nsFLASHParallel--130ns-----ROHS3 Compliant56-TSOP----------
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