Cypress Semiconductor Corp S29GL01GS11TFV020
- Part Number:
- S29GL01GS11TFV020
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3235056-S29GL01GS11TFV020
- Description:
- IC FLASH 1GBIT 110NS 56TSOP
- Datasheet:
- S29GL01GS11TFV020
Cypress Semiconductor Corp S29GL01GS11TFV020 technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp S29GL01GS11TFV020.
- Factory Lead Time13 Weeks
- Mounting TypeSurface Mount
- Package / Case56-TFSOP (0.724, 18.40mm Width)
- Surface MountYES
- Operating Temperature-40°C~105°C TA
- PackagingTray
- Published2015
- SeriesGL-S
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations56
- Terminal FinishMATTE TIN
- HTS Code8542.32.00.51
- TechnologyFLASH - NOR
- Voltage - Supply2.7V~3.6V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch0.5mm
- Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PDSO-G56
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)3.6V
- Power Supplies3/3.3V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size1Gb 64M x 16
- Memory TypeNon-Volatile
- Operating ModeASYNCHRONOUS
- Supply Current-Max0.08mA
- Access Time110ns
- Memory FormatFLASH
- Memory InterfaceParallel
- Organization64MX16
- Memory Width16
- Write Cycle Time - Word, Page60ns
- Standby Current-Max0.0002A
- Memory Density1073741824 bit
- Programming Voltage3V
- Data PollingYES
- Toggle BitYES
- Command User InterfaceYES
- Number of Sectors/Size1K
- Sector Size64K
- Page Size16words
- Ready/BusyYES
- Boot BlockBOTTOM/TOP
- Common Flash InterfaceYES
- Height Seated (Max)1.2mm
- Length18.4mm
- Width14mm
- RoHS StatusROHS3 Compliant
S29GL01GS11TFV020 Overview
This product has an operating temperature range of -40°C to 105°C TA. It utilizes FLASH - NOR technology and has a single function. The memory type is non-volatile and the interface is parallel with a width of 16. The memory density is 1073741824 bits and there is 1K sector/size. It also features a Common Flash Interface and has a width of 14mm.
S29GL01GS11TFV020 Features
Package / Case: 56-TFSOP (0.724, 18.40mm Width)
S29GL01GS11TFV020 Applications
There are a lot of Cypress Semiconductor Corp S29GL01GS11TFV020 Memory applications.
DVD disk buffer
eSRAM
Cache memory
supercomputers
servers
data buffer
nonvolatile BIOS memory
personal digital assistants
workstations,
mainframes
This product has an operating temperature range of -40°C to 105°C TA. It utilizes FLASH - NOR technology and has a single function. The memory type is non-volatile and the interface is parallel with a width of 16. The memory density is 1073741824 bits and there is 1K sector/size. It also features a Common Flash Interface and has a width of 14mm.
S29GL01GS11TFV020 Features
Package / Case: 56-TFSOP (0.724, 18.40mm Width)
S29GL01GS11TFV020 Applications
There are a lot of Cypress Semiconductor Corp S29GL01GS11TFV020 Memory applications.
DVD disk buffer
eSRAM
Cache memory
supercomputers
servers
data buffer
nonvolatile BIOS memory
personal digital assistants
workstations,
mainframes
S29GL01GS11TFV020 More Descriptions
FLASH - NOR Memory IC 1Gb (64M x 16) Parallel 110ns 56-TSOP
NOR Flash Parallel 3V 1Gbit 64M x 16Bit 110ns 56-Pin TSOP Tray
TRAY PKGED / 1G BIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, LOWEST ADDRESS SECTOR PROTECTED
NOR Flash Parallel 3V 1Gbit 64M x 16Bit 110ns 56-Pin TSOP Tray
TRAY PKGED / 1G BIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, LOWEST ADDRESS SECTOR PROTECTED
The three parts on the right have similar specifications to S29GL01GS11TFV020.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)JESD-30 CodeQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeMemory TypeOperating ModeSupply Current-MaxAccess TimeMemory FormatMemory InterfaceOrganizationMemory WidthWrite Cycle Time - Word, PageStandby Current-MaxMemory DensityProgramming VoltageData PollingToggle BitCommand User InterfaceNumber of Sectors/SizeSector SizePage SizeReady/BusyBoot BlockCommon Flash InterfaceHeight Seated (Max)LengthWidthRoHS StatusNumber of PinsECCN CodeTime@Peak Reflow Temperature-Max (s)DensityAccess Time (Max)Alternate Memory WidthRadiation HardeningContact PlatingMountSupplier Device PackageMax Operating TemperatureMin Operating TemperatureInterfaceMax Supply VoltageMin Supply VoltageView Compare
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S29GL01GS11TFV02013 WeeksSurface Mount56-TFSOP (0.724, 18.40mm Width)YES-40°C~105°C TATray2015GL-Se3Active3 (168 Hours)56MATTE TIN8542.32.00.51FLASH - NOR2.7V~3.6VDUALNOT SPECIFIED13V0.5mmNOT SPECIFIEDR-PDSO-G56Not Qualified3.6V3/3.3V2.7V1Gb 64M x 16Non-VolatileASYNCHRONOUS0.08mA110nsFLASHParallel64MX161660ns0.0002A1073741824 bit3VYESYESYES1K64K16wordsYESBOTTOM/TOPYES1.2mm18.4mm14mmROHS3 Compliant----------------
-
-Surface Mount64-LBGAYES-40°C~85°C TATray2015GL-Pe0Obsolete3 (168 Hours)64TIN LEAD8542.32.00.51FLASH - NOR1.65V~3.6VBOTTOM24013V1mm---3.6V1.8/3.33/3.3V2.7V1Gb 128M x 8Non-Volatile-0.11mA-FLASHParallel1GX11130ns0.000005A-3VYESYESYES1K128K8/16wordsYES-YES1.4mm13mm11mmROHS3 Compliant643A991.B.1.A301 Gb130 ns8No--------
-
-Surface Mount56-TFSOP (0.724, 18.40mm Width)--40°C~85°C TATray2016GL-P-Obsolete3 (168 Hours)---FLASH - NOR3V~3.6V-----------1Gb 128M x 8Non-Volatile--110nsFLASHParallel--110ns---------------ROHS3 Compliant56--1 Gb--NoTinSurface Mount56-TSOP85°C-40°CParallel3.6V3V
-
-Surface Mount56-TFSOP (0.724, 18.40mm Width)--40°C~85°C TATray2016GL-P-Obsolete3 (168 Hours)---FLASH - NOR3V~3.6V-----------1Gb 128M x 8Non-Volatile--130nsFLASHParallel--130ns---------------ROHS3 Compliant---------56-TSOP-----
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