Cypress Semiconductor Corp S29GL01GS11DHI020
- Part Number:
- S29GL01GS11DHI020
- Manufacturer:
- Cypress Semiconductor Corp
- Ventron No:
- 3229923-S29GL01GS11DHI020
- Description:
- IC FLASH 1GBIT 110NS 64BGA
- Datasheet:
- S29GL01GS11DHI020
Cypress Semiconductor Corp S29GL01GS11DHI020 technical specifications, attributes, parameters and parts with similar specifications to Cypress Semiconductor Corp S29GL01GS11DHI020.
- Factory Lead Time13 Weeks
- Contact PlatingCopper, Silver, Tin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case64-LBGA
- Number of Pins64
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Published2011
- SeriesGL-S
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations64
- ECCN Code3A991.B.1.A
- HTS Code8542.32.00.51
- TechnologyFLASH - NOR
- Voltage - Supply2.7V~3.6V
- Terminal PositionBOTTOM
- Number of Functions1
- Supply Voltage3V
- Terminal Pitch1mm
- Supply Voltage-Max (Vsup)3.6V
- Power Supplies3/3.3V
- Supply Voltage-Min (Vsup)2.7V
- Memory Size1Gb 64M x 16
- Nominal Supply Current60mA
- Memory TypeNon-Volatile
- Access Time110ns
- Memory FormatFLASH
- Memory InterfaceParallel
- Data Bus Width16b
- Organization128MX8
- Memory Width8
- Write Cycle Time - Word, Page60ns
- Address Bus Width26b
- Density1 Gb
- Standby Current-Max0.0001A
- Sync/AsyncAsynchronous
- Word Size16b
- Programming Voltage2.7V
- Data PollingYES
- Toggle BitYES
- Command User InterfaceYES
- Number of Sectors/Size1K
- Sector Size64K
- Page Size32B
- Ready/BusyYES
- Common Flash InterfaceYES
- Height Seated (Max)1.4mm
- Length9mm
- Radiation HardeningNo
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
S29GL01GS11DHI020 Overview
The contact plating for this particular component consists of copper, silver, and tin, ensuring a strong and reliable connection. This part is currently active and readily available for use. It features 64 terminations, allowing for multiple connections to be made. The technology used in this component is FLASH - NOR, providing fast and efficient data storage and retrieval. The supply voltage for this part is 3V, with a maximum of 3.6V and a minimum of 2.7V. The terminal pitch is 1mm, making it suitable for various applications. The programming voltage is 2.7V, ensuring compatibility with other devices. Additionally, this component features a "ready/busy" indicator, denoting its status as active and ready for use.
S29GL01GS11DHI020 Features
Package / Case: 64-LBGA
64 Pins
S29GL01GS11DHI020 Applications
There are a lot of Cypress Semiconductor Corp S29GL01GS11DHI020 Memory applications.
eSRAM
eDRAM
networking
printers
cell phones
workstations,
networks
Camcorders
personal digital assistants
mainframes
The contact plating for this particular component consists of copper, silver, and tin, ensuring a strong and reliable connection. This part is currently active and readily available for use. It features 64 terminations, allowing for multiple connections to be made. The technology used in this component is FLASH - NOR, providing fast and efficient data storage and retrieval. The supply voltage for this part is 3V, with a maximum of 3.6V and a minimum of 2.7V. The terminal pitch is 1mm, making it suitable for various applications. The programming voltage is 2.7V, ensuring compatibility with other devices. Additionally, this component features a "ready/busy" indicator, denoting its status as active and ready for use.
S29GL01GS11DHI020 Features
Package / Case: 64-LBGA
64 Pins
S29GL01GS11DHI020 Applications
There are a lot of Cypress Semiconductor Corp S29GL01GS11DHI020 Memory applications.
eSRAM
eDRAM
networking
printers
cell phones
workstations,
networks
Camcorders
personal digital assistants
mainframes
S29GL01GS11DHI020 More Descriptions
GL-S Series 1 Gb 110 ns Parallel Surface Mount Flash - Nor Memory IC - FBGA-64
NOR Flash Parallel 3V/3.3V 1G-bit 64M x 16 110ns 64-Pin Fortified BGA Tray
MEMORY, FLASH, 1GB, 3V, 64FBGA; Flash Memory Type:Parallel NOR; Memory Size:1Gbit; Flash Memory Configuration:64M x 16bit; IC Interface Type:Parallel; Memory Case Style:FBGA; No. of Pins:64Pins; Clock Frequency:-; Access Time:110ns; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Operating Temperature Min:-40°C; Operating Temperature Max:85°C; Product Range:3V Parallel NOR Flash Memories; RoHS Phthalates Compliant:Yes; MSL:MSL 3 - 168 hours; SVHC:No SVHC (17-Dec-2015); Memory Type:Flash
NOR Flash Parallel 3V/3.3V 1G-bit 64M x 16 110ns 64-Pin Fortified BGA Tray
MEMORY, FLASH, 1GB, 3V, 64FBGA; Flash Memory Type:Parallel NOR; Memory Size:1Gbit; Flash Memory Configuration:64M x 16bit; IC Interface Type:Parallel; Memory Case Style:FBGA; No. of Pins:64Pins; Clock Frequency:-; Access Time:110ns; Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Operating Temperature Min:-40°C; Operating Temperature Max:85°C; Product Range:3V Parallel NOR Flash Memories; RoHS Phthalates Compliant:Yes; MSL:MSL 3 - 168 hours; SVHC:No SVHC (17-Dec-2015); Memory Type:Flash
The three parts on the right have similar specifications to S29GL01GS11DHI020.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeHTS CodeTechnologyVoltage - SupplyTerminal PositionNumber of FunctionsSupply VoltageTerminal PitchSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeNominal Supply CurrentMemory TypeAccess TimeMemory FormatMemory InterfaceData Bus WidthOrganizationMemory WidthWrite Cycle Time - Word, PageAddress Bus WidthDensityStandby Current-MaxSync/AsyncWord SizeProgramming VoltageData PollingToggle BitCommand User InterfaceNumber of Sectors/SizeSector SizePage SizeReady/BusyCommon Flash InterfaceHeight Seated (Max)LengthRadiation HardeningREACH SVHCRoHS StatusJESD-609 CodeTerminal FinishPeak Reflow Temperature (Cel)Reflow Temperature-Max (s)Surface MountTime@Peak Reflow Temperature-Max (s)Supply Current-MaxAccess Time (Max)Alternate Memory WidthWidthSupplier Device PackageView Compare
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S29GL01GS11DHI02013 WeeksCopper, Silver, TinSurface MountSurface Mount64-LBGA64-40°C~85°C TATray2011GL-SActive3 (168 Hours)643A991.B.1.A8542.32.00.51FLASH - NOR2.7V~3.6VBOTTOM13V1mm3.6V3/3.3V2.7V1Gb 64M x 1660mANon-Volatile110nsFLASHParallel16b128MX8860ns26b1 Gb0.0001AAsynchronous16b2.7VYESYESYES1K64K32BYESYES1.4mm9mmNoNo SVHCROHS3 Compliant------------
-
13 Weeks-Surface MountSurface Mount64-LBGA64-40°C~85°C TATray2015GL-SActive3 (168 Hours)643A991.B.1.A8542.32.00.51FLASH - NOR2.7V~3.6VBOTTOM13V1mm3.6V3/3.3V2.7V1Gb 64M x 1660mANon-Volatile100nsFLASHParallel--1660ns26b1 Gb0.0001AAsynchronous16b3VYESYESYES1K64K32BYESYES1.4mm13mmNo-ROHS3 Compliante1Tin/Silver/Copper (Sn/Ag/Cu)26040-------
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---Surface Mount64-LBGA64-40°C~85°C TATray2015GL-PObsolete3 (168 Hours)643A991.B.1.A8542.32.00.51FLASH - NOR1.65V~3.6VBOTTOM13V1mm3.6V1.8/3.33/3.3V2.7V1Gb 128M x 8-Non-Volatile-FLASHParallel-1GX11130ns-1 Gb0.000005A--3VYESYESYES1K128K8/16wordsYESYES1.4mm13mmNo-ROHS3 Compliante0TIN LEAD240-YES300.11mA130 ns811mm-
-
---Surface Mount56-TFSOP (0.724, 18.40mm Width)--40°C~85°C TATray2016GL-PObsolete3 (168 Hours)---FLASH - NOR3V~3.6V-------1Gb 128M x 8-Non-Volatile130nsFLASHParallel---130ns------------------ROHS3 Compliant----------56-TSOP
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