QS6K1TR

Rohm Semiconductor QS6K1TR

Part Number:
QS6K1TR
Manufacturer:
Rohm Semiconductor
Ventron No:
2847601-QS6K1TR
Description:
MOSFET 2N-CH 30V 1A TSMT6
ECAD Model:
Datasheet:
QS6K1TR

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Specifications
Rohm Semiconductor QS6K1TR technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor QS6K1TR.
  • Factory Lead Time
    20 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6
  • Number of Pins
    6
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • Termination
    SMD/SMT
  • ECCN Code
    EAR99
  • Resistance
    364MOhm
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    30V
  • Max Power Dissipation
    900mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    1A
  • Time@Peak Reflow Temperature-Max (s)
    10
  • Base Part Number
    *K1
  • Pin Count
    6
  • Number of Elements
    2
  • Element Configuration
    Dual
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.25W
  • Turn On Delay Time
    7 ns
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    238m Ω @ 1A, 4.5V
  • Vgs(th) (Max) @ Id
    1.5V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    77pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    2.4nC @ 4.5V
  • Rise Time
    7ns
  • Fall Time (Typ)
    7 ns
  • Turn-Off Delay Time
    15 ns
  • Continuous Drain Current (ID)
    1A
  • Threshold Voltage
    1.5V
  • Gate to Source Voltage (Vgs)
    12V
  • Drain Current-Max (Abs) (ID)
    1A
  • Drain to Source Breakdown Voltage
    30V
  • Dual Supply Voltage
    30V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Nominal Vgs
    1.5 V
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
QS6K1TR Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of obsolete (EOL) components. The images we provide are for reference only, for detailed product information please see specification sheet QS6K1TR or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of QS6K1TR. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
QS6K1TR More Descriptions
Transistor MOSFET Array Dual N-CH 30V 1A 6-Pin TSMT Emboss T/RAvnet Japan
N-Channel N-Channel 1.25 W 30 V 364 mOhm 2.4 nC SMT 2.5 V Drive MosFet -TSMT-6
Trans Mosfet N-Ch 30V 1A 6-Pin Tsmt T/R Rohs Compliant: Yes |Rohm QS6K1TR
MOSFET, DUAL, NN, 30V, 1A; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:1A; Source Voltage Vds:30V; On Resistance
MOSFET, DUAL, NN, 30V, 1A; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 1A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.364ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 900mW; Transistor Case Style: TSMT; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Drain Current Id, N Channel: 1A; Current Id Max: 1A; Drain Source Voltage Vds, N Channel: 30V; Module Configuration: Dual; On Resistance Rds(on), N Channel: 0.17ohm; Pulse Current Idm: 4A; Termination Type: Surface Mount Device; Voltage Vds Typ: 30V; Voltage Vgs Rds on Measurement: 2.5V; Voltage Vgs th Max: 1.5V; Voltage Vgs th Min: 500mV
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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