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PZT3906 More Descriptions
Trans GP BJT PNP 40V 0.2A 1000mW 4-Pin(3 Tab) SOT-223 T/R / TRANS PNP 40V 0.2A SOT223
Bipolar Transistors - BJT PNP Transistor General Purpose
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
PZT3906 Series 40 V CE Breakdown 200 mA PNP General Purpose Amplifier SOT-223
Pnp 40V Bjt Sot223 Sngl Rohs Compliant: Yes
This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA.
TRANSISTOR, PNP 0.2A 40V SOT223; Transistor Polarity:P Channel; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:1W; DC Collector Current:200mA; DC Current Gain hFE:300; Operating Temperature Range:-55°C to 150°C; RF Transistor Case:SOT-223; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Continuous Collector Current Ic:100mA; Gain Bandwidth ft Typ:250MHz; Package / Case:SOT-223; Termination Type:SMD; Transistor Case Style:SOT-223; Transistor Type:General Purpose
Bipolar Transistors - BJT PNP Transistor General Purpose
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
PZT3906 Series 40 V CE Breakdown 200 mA PNP General Purpose Amplifier SOT-223
Pnp 40V Bjt Sot223 Sngl Rohs Compliant: Yes
This device is designed for general purpose amplifier and switching applications at collector currents of 10 µA to 100 mA.
TRANSISTOR, PNP 0.2A 40V SOT223; Transistor Polarity:P Channel; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:1W; DC Collector Current:200mA; DC Current Gain hFE:300; Operating Temperature Range:-55°C to 150°C; RF Transistor Case:SOT-223; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Continuous Collector Current Ic:100mA; Gain Bandwidth ft Typ:250MHz; Package / Case:SOT-223; Termination Type:SMD; Transistor Case Style:SOT-223; Transistor Type:General Purpose
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