Nexperia USA Inc. PXT2222A,115
- Part Number:
- PXT2222A,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2465375-PXT2222A,115
- Description:
- TRANS NPN 40V 0.1A SOT89
- Datasheet:
- PXT2222A,115
Nexperia USA Inc. PXT2222A,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PXT2222A,115.
- Factory Lead Time4 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Max Power Dissipation1.1W
- Terminal FormFLAT
- Frequency300MHz
- Base Part NumberPXT2222A
- Pin Count3
- Number of Elements1
- PolarityNPN, PNP
- Element ConfigurationSingle
- Power Dissipation1.1W
- Case ConnectionCOLLECTOR
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product300MHz
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA 10V
- Current - Collector Cutoff (Max)10nA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
- Collector Emitter Breakdown Voltage40V
- Current - Collector (Ic) (Max)600mA
- Transition Frequency300MHz
- Collector Emitter Saturation Voltage1V
- Max Breakdown Voltage40V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)6V
- VCEsat-Max1 V
- Turn Off Time-Max (toff)250ns
- Collector-Base Capacitance-Max8pF
- Height1.6mm
- Length4.6mm
- Width2.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
PXT2222A,115 Overview
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.300MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
PXT2222A,115 Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
PXT2222A,115 Applications
There are a lot of Nexperia USA Inc.
PXT2222A,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 100 @ 150mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.300MHz is present in the transition frequency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.
PXT2222A,115 Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz
PXT2222A,115 Applications
There are a lot of Nexperia USA Inc.
PXT2222A,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
PXT2222A,115 More Descriptions
PXT2222A Series 40 V 100 mA 800 mW SMT NPN Switching Transistor - SOT-89
Trans GP BJT NPN 40V 0.6A 1100mW Automotive 4-Pin(3 Tab) SOT-89 T/R
PXT2222A - NPN switching transistor
40V 800mW 600mA 100@150mA,10V 300MHz 1V@500mA,50mA NPN 150¡æ@(Tj) SOT-89 Bipolar Transistors - BJT ROHS
Switching Transistor, Pnp, -60V, -600Ma, 3-Sot-89, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:40V; Continuous Collector Current:600Ma; Power Dissipation:500Mw; Transistor Mounting:Surface Mount; Product Range:-Rohs Compliant: Yes |Nexperia PXT2222A,115.
Trans GP BJT NPN 40V 0.6A 1100mW Automotive 4-Pin(3 Tab) SOT-89 T/R
PXT2222A - NPN switching transistor
40V 800mW 600mA 100@150mA,10V 300MHz 1V@500mA,50mA NPN 150¡æ@(Tj) SOT-89 Bipolar Transistors - BJT ROHS
Switching Transistor, Pnp, -60V, -600Ma, 3-Sot-89, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:40V; Continuous Collector Current:600Ma; Power Dissipation:500Mw; Transistor Mounting:Surface Mount; Product Range:-Rohs Compliant: Yes |Nexperia PXT2222A,115.
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