NXP USA Inc. PDTA115TE,115
- Part Number:
- PDTA115TE,115
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2472688-PDTA115TE,115
- Description:
- TRANS PREBIAS PNP 150MW SC75
- ECAD Model:
-
- Datasheet:
- PDTA115TE,115
NXP USA Inc. PDTA115TE,115 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. PDTA115TE,115.
- Mounting TypeSurface Mount
- Package / CaseSC-75, SOT-416
- Surface MountYES
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2009
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Additional FeatureBUILT IN BIAS RESISTOR
- SubcategoryBIP General Purpose Small Signal
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberPDTA115
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusNot Qualified
- Operating Temperature (Max)150°C
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN RESISTOR
- Power - Max150mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP - Pre-Biased
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1mA 5V
- Current - Collector Cutoff (Max)1μA
- Vce Saturation (Max) @ Ib, Ic150mV @ 250μA, 5mA
- Voltage - Collector Emitter Breakdown (Max)50V
- Current - Collector (Ic) (Max)100mA
- Power Dissipation-Max (Abs)0.15W
- Resistor - Base (R1)100 k Ω
- RoHS StatusROHS3 Compliant
PDTA115TE,115 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PDTA115TE,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PDTA115TE,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - Bipolar (BJT) - Single, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet PDTA115TE,115 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of PDTA115TE,115. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
PDTA115TE,115 More Descriptions
BRT TRANSISTOR, PNP, -50V, -100MA, 100KOHM / OPEN, 3-SOT-416 - More Details
Trans Digital BJT PNP 50V 100mA 3-Pin SC-75 T/R
PDTA115T series - PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = open
Tape & Reel (TR) Surface Mount PNP SINGLE WITH BUILT-IN RESISTOR Pre-Biased Bipolar Transistor (BJT) 100 @ 1mA 5V 100mA 150mW 50V
TRANS PNP W/RES 50V SOT-416; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -50V; Transition Frequency ft: -; Power Dissipation Pd: 150mW; DC Collector Current: -100mA; DC Current Gain hFE: 100hFE; Transistor Ca
Small Signal Digital (BRT) Transistor; Collector Emitter Voltage V(br)ceo:-50V; Continuous Collector Current Ic:-100mA; Base Input Resistor R1:100kohm; RF Transistor Case:SOT-416; No. of Pins:3 ;RoHS Compliant: Yes
TRANS PNP W/RES 50V SOT-416; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-50V; Power Dissipation Pd:150mW; DC Collector Current:-100mA; DC Current Gain hFE:100; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-416; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:-150mV; Current Ic Continuous a Max:-5mA; Hfe Min:100; Package / Case:SOT-416; Power Dissipation Pd:150mW; Termination Type:SMD; Transistor Type:General Purpose
Trans Digital BJT PNP 50V 100mA 3-Pin SC-75 T/R
PDTA115T series - PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = open
Tape & Reel (TR) Surface Mount PNP SINGLE WITH BUILT-IN RESISTOR Pre-Biased Bipolar Transistor (BJT) 100 @ 1mA 5V 100mA 150mW 50V
TRANS PNP W/RES 50V SOT-416; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -50V; Transition Frequency ft: -; Power Dissipation Pd: 150mW; DC Collector Current: -100mA; DC Current Gain hFE: 100hFE; Transistor Ca
Small Signal Digital (BRT) Transistor; Collector Emitter Voltage V(br)ceo:-50V; Continuous Collector Current Ic:-100mA; Base Input Resistor R1:100kohm; RF Transistor Case:SOT-416; No. of Pins:3 ;RoHS Compliant: Yes
TRANS PNP W/RES 50V SOT-416; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-50V; Power Dissipation Pd:150mW; DC Collector Current:-100mA; DC Current Gain hFE:100; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-416; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:-150mV; Current Ic Continuous a Max:-5mA; Hfe Min:100; Package / Case:SOT-416; Power Dissipation Pd:150mW; Termination Type:SMD; Transistor Type:General Purpose
The three parts on the right have similar specifications to PDTA115TE,115.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialPackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusOperating Temperature (Max)Number of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power Dissipation-Max (Abs)Resistor - Base (R1)RoHS StatusSupplier Device PackageResistor - Emitter Base (R2)Factory Lead TimeMountNumber of PinsMax Operating TemperatureMin Operating TemperatureMax Power DissipationPolarityElement ConfigurationCase ConnectionCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageMax Breakdown VoltageRadiation HardeningMax Output CurrentPower DissipationEmitter Base Voltage (VEBO)hFE MinLead FreeView Compare
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PDTA115TE,115Surface MountSC-75, SOT-416YESSILICONTape & Reel (TR)2009e3Obsolete1 (Unlimited)3EAR99Tin (Sn)BUILT IN BIAS RESISTORBIP General Purpose Small SignalDUALGULL WING26040PDTA1153R-PDSO-G3Not Qualified150°C1SINGLE WITH BUILT-IN RESISTOR150mWSWITCHINGPNPPNP - Pre-Biased100 @ 1mA 5V1μA150mV @ 250μA, 5mA50V100mA0.15W100 k ΩROHS3 Compliant---------------------- -
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)--Tape & Box (TB)2009-Obsolete1 (Unlimited)---------PDTA143------500mW--PNP - Pre-Biased100 @ 10mA 5V1μA100mV @ 250μA, 5mA50V100mA-4.7 kOhmsROHS3 CompliantTO-92-347 kOhms-------------------
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Surface MountSC-101, SOT-883--Tape & Reel (TR)2009e3Active1 (Unlimited)3EAR99Tin (Sn)BUILT IN BIAS RESISTOR-BOTTOM-26030PDTA1153---1--SWITCHING-PNP - Pre-Biased100 @ 1mA 5V1μA150mV @ 250μA, 5mA---100 k ΩROHS3 Compliant--8 WeeksSurface Mount3150°C-65°C250mWPNPSingleCOLLECTOR50V100mA50V50VNo-----
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Surface MountSC-70, SOT-323--Tape & Reel (TR)2004e3Active1 (Unlimited)3EAR99Tin (Sn)BUILT-IN BIAS RESISTOR RATIO IS 4.7-DUALGULL WING26040PDTA1143R-PDSO-G3--1--SWITCHING-PNP - Pre-Biased100 @ 5mA 5V1μA100mV @ 250μA, 5mA---10 k ΩROHS3 Compliant-47 k Ω4 WeeksSurface Mount70150°C-65°C200mWPNPSingle-50V100mA50V50VNo100mA200mW-10V100Lead Free
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