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PDTA114YU,115

Nexperia USA Inc. PDTA114YU,115

Part Number:
PDTA114YU,115
Manufacturer:
Nexperia USA Inc.
Ventron No:
2847357-PDTA114YU,115
Description:
TRANS PREBIAS PNP 200MW SOT323
ECAD Model:
Datasheet:
PDTA114YU,115

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Specifications
Nexperia USA Inc. PDTA114YU,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PDTA114YU,115.
  • Factory Lead Time
    4 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SC-70, SOT-323
  • Number of Pins
    70
  • Packaging
    Tape & Reel (TR)
  • Published
    2004
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -65°C
  • Additional Feature
    BUILT-IN BIAS RESISTOR RATIO IS 4.7
  • Max Power Dissipation
    200mW
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    PDTA114
  • Pin Count
    3
  • JESD-30 Code
    R-PDSO-G3
  • Max Output Current
    100mA
  • Number of Elements
    1
  • Polarity
    PNP
  • Element Configuration
    Single
  • Power Dissipation
    200mW
  • Transistor Application
    SWITCHING
  • Transistor Type
    PNP - Pre-Biased
  • Collector Emitter Voltage (VCEO)
    50V
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 5mA 5V
  • Current - Collector Cutoff (Max)
    1μA
  • Vce Saturation (Max) @ Ib, Ic
    100mV @ 250μA, 5mA
  • Collector Emitter Breakdown Voltage
    50V
  • Max Breakdown Voltage
    50V
  • Emitter Base Voltage (VEBO)
    -10V
  • hFE Min
    100
  • Resistor - Base (R1)
    10 k Ω
  • Resistor - Emitter Base (R2)
    47 k Ω
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
The Nexperia PDTA114YU,115 is a single, pre-biased bipolar junction transistor (BJT) designed for use in a variety of applications. It is a PNP type transistor with a maximum power dissipation of 200mW and a SOT323 package.

Features of the PDTA114YU,115 include a low collector-emitter saturation voltage, a high current gain, and a low noise figure. It also has a high switching speed and a wide operating temperature range.

The PDTA114YU,115 is suitable for use in a variety of applications, including audio amplifiers, power supplies, and motor control circuits. It can also be used in automotive, industrial, and consumer electronics applications.
PDTA114YU,115 More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
PDTA114YU Series 50 V 100 mA SMT PNP Resistor-Equipped Transistor - SOT-323
Trans Digital BJT PNP 50V 100mA Automotive 3-Pin SC-70 T/R
PDTA114Y series - PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ
BRT TRANSISTOR, PNP, -50V, -100MA, 10KOHM / 47KOHM, 3-SOT-323; Collector Emitter Voltage V(br)ceo:-50V; Continuous Collector Current Ic:-100mA; Base Input Resistor R1:10kohm; Base-Emitter Resistor R2:47kohm ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to PDTA114YU,115.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Packaging
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Max Output Current
    Number of Elements
    Polarity
    Element Configuration
    Power Dissipation
    Transistor Application
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Max Breakdown Voltage
    Emitter Base Voltage (VEBO)
    hFE Min
    Resistor - Base (R1)
    Resistor - Emitter Base (R2)
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Case Connection
    Transition Frequency
    Frequency - Transition
    View Compare
  • PDTA114YU,115
    PDTA114YU,115
    Nexperia USA Inc.
    4 Weeks
    Surface Mount
    Surface Mount
    SC-70, SOT-323
    70
    Tape & Reel (TR)
    2004
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    150°C
    -65°C
    BUILT-IN BIAS RESISTOR RATIO IS 4.7
    200mW
    DUAL
    GULL WING
    260
    40
    PDTA114
    3
    R-PDSO-G3
    100mA
    1
    PNP
    Single
    200mW
    SWITCHING
    PNP - Pre-Biased
    50V
    100mA
    100 @ 5mA 5V
    1μA
    100mV @ 250μA, 5mA
    50V
    50V
    -10V
    100
    10 k Ω
    47 k Ω
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
  • PDTA124XS,126
    PDTA124XS,126
    NXP USA Inc.
    -
    -
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    -
    Tape & Box (TB)
    2009
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    PDTA124
    -
    -
    -
    -
    -
    -
    -
    -
    PNP - Pre-Biased
    -
    -
    80 @ 5mA 5V
    1μA
    150mV @ 500μA, 10mA
    -
    -
    -
    -
    22 kOhms
    47 kOhms
    -
    ROHS3 Compliant
    -
    TO-92-3
    500mW
    50V
    100mA
    -
    -
    -
    PDTA114YU,115 vs PDTA124XS,126
  • PDTA113ZS,126
    PDTA113ZS,126
    NXP USA Inc.
    -
    -
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    -
    Tape & Box (TB)
    2009
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    PDTA113
    -
    -
    -
    -
    -
    -
    -
    -
    PNP - Pre-Biased
    -
    -
    35 @ 5mA 5V
    1μA
    150mV @ 500μA, 10mA
    -
    -
    -
    -
    1 k Ω
    10 k Ω
    -
    ROHS3 Compliant
    -
    -
    500mW
    50V
    100mA
    -
    -
    -
    PDTA114YU,115 vs PDTA113ZS,126
  • PDTA143TMB,315
    PDTA143TMB,315
    Nexperia USA Inc.
    8 Weeks
    Surface Mount
    Surface Mount
    3-XFDFN
    3
    Tape & Reel (TR)
    -
    e3
    Active
    1 (Unlimited)
    3
    -
    Tin (Sn)
    150°C
    -65°C
    BUILT IN BIAS RESISTOR
    250mW
    BOTTOM
    -
    -
    -
    PDTA143
    3
    -
    -
    1
    PNP
    Single
    -
    SWITCHING
    PNP - Pre-Biased
    50V
    100mA
    200 @ 1mA 5V
    1μA
    150mV @ 250μA, 5mA
    50V
    -
    -
    -
    4.7 k Ω
    -
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    COLLECTOR
    180MHz
    180MHz
    PDTA114YU,115 vs PDTA143TMB,315
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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