ON Semiconductor NVTFS4C06NTAG

NVTFS4C06NTAG Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 34 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1683pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 21A.71A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 367A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 30V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

NVTFS4C06NTAG Features
the avalanche energy rating (Eas) is 34 mJ
a continuous drain current (ID) of 21A
based on its rated peak drain current 367A.
a 30V drain to source voltage (Vdss)


NVTFS4C06NTAG Applications
There are a lot of ON Semiconductor
NVTFS4C06NTAG applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification