ON Semiconductor NTR4003NT3G
- Part Number:
- NTR4003NT3G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2481044-NTR4003NT3G
- Description:
- MOSFET N-CH 30V 500MA SOT-23
- Datasheet:
- NTR4003NT3G
ON Semiconductor NTR4003NT3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTR4003NT3G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time10 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2000
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance1Ohm
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- Number of Elements1
- Power Dissipation-Max690mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation690mW
- Turn On Delay Time16.7 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.5 Ω @ 10mA, 4V
- Vgs(th) (Max) @ Id1.4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds21pF @ 5V
- Current - Continuous Drain (Id) @ 25°C500mA Ta
- Gate Charge (Qg) (Max) @ Vgs1.15nC @ 5V
- Rise Time47.9ns
- Drive Voltage (Max Rds On,Min Rds On)2.5V 4V
- Vgs (Max)±20V
- Fall Time (Typ)47.9 ns
- Turn-Off Delay Time65.1 ns
- Continuous Drain Current (ID)500mA
- Threshold Voltage800mV
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)0.5A
- Drain to Source Breakdown Voltage30V
- Height1.01mm
- Length3.04mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NTR4003NT3G Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 21pF @ 5V.This device conducts a continuous drain current (ID) of 500mA, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.5A.When the device is turned off, a turn-off delay time of 65.1 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 16.7 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 800mV threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 2.5V 4V volts (2.5V 4V).
NTR4003NT3G Features
a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 65.1 ns
a threshold voltage of 800mV
NTR4003NT3G Applications
There are a lot of ON Semiconductor
NTR4003NT3G applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 21pF @ 5V.This device conducts a continuous drain current (ID) of 500mA, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.5A.When the device is turned off, a turn-off delay time of 65.1 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 16.7 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 800mV threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 2.5V 4V volts (2.5V 4V).
NTR4003NT3G Features
a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 65.1 ns
a threshold voltage of 800mV
NTR4003NT3G Applications
There are a lot of ON Semiconductor
NTR4003NT3G applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
NTR4003NT3G More Descriptions
NTR4003NT3G N-channel MOSFET Transistor; 0.56 A; 30 V; 3-Pin SOT-23
Trans MOSFET N-CH 30V 0.5A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled
Transistor MOSFET N-CH 30V 0.5A 3-Pin SOT-23 T/R
N-Channel 30 V 1 Ohm 0.69 W Surface Mount Small Signal MOSFET - SOT-23
Single N-Channel Small Signal MOSFET 30V, 560mA, 1.5Ω
Mosfet Transistor, N Channel, 560 Ma, 30 V, 1.5 Ohm, 4 V, 800 Mv Rohs Compliant: Yes |Onsemi NTR4003NT3G
N CHANNEL MOSFET, 30V, 560mA SOT-23, FULL REEL
Small Signal Field-Effect Transistor, 0.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
Trans MOSFET N-CH 30V 0.5A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled
Transistor MOSFET N-CH 30V 0.5A 3-Pin SOT-23 T/R
N-Channel 30 V 1 Ohm 0.69 W Surface Mount Small Signal MOSFET - SOT-23
Single N-Channel Small Signal MOSFET 30V, 560mA, 1.5Ω
Mosfet Transistor, N Channel, 560 Ma, 30 V, 1.5 Ohm, 4 V, 800 Mv Rohs Compliant: Yes |Onsemi NTR4003NT3G
N CHANNEL MOSFET, 30V, 560mA SOT-23, FULL REEL
Small Signal Field-Effect Transistor, 0.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
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