ON Semiconductor NTGD1100LT1G
- Part Number:
- NTGD1100LT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3742316-NTGD1100LT1G
- Description:
- MOSFET N/P-CH 8V 3.3A 6-TSOP
- Datasheet:
- NTGD1100LT1G
ON Semiconductor NTGD1100LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTGD1100LT1G.
- Factory Lead Time2 Weeks
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Mounting TypeSurface Mount
- Package / CaseSOT-23-6 Thin, TSOT-23-6
- Surface MountYES
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2001
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Resistance40MOhm
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC20V
- Max Power Dissipation830mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating3.3A
- Reflow Temperature-Max (s)40
- Base Part NumberNTGD1100L
- Pin Count6
- Number of Outputs1
- Output TypeP-Channel
- Number of Elements2
- InterfaceOn/Off
- Element ConfigurationDual
- Output ConfigurationHigh Side
- Operating ModeENHANCEMENT MODE
- Power Dissipation830mW
- Switch TypeGeneral Purpose
- Transistor ApplicationSWITCHING
- Drain to Source Voltage (Vdss)8V
- Continuous Drain Current (ID)3.3A
- Ratio - Input:Output1:1
- Gate to Source Voltage (Vgs)8V
- Voltage - Load1.8V~8V
- Drain to Source Breakdown Voltage8V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Rds On (Typ)40m Ω
- Drain to Source Resistance80mOhm
- Height1mm
- Length3.1mm
- Width1.7mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NTGD1100LT1G Overview
The product is a surface mount device with 6 pins. It can operate in a wide temperature range from -55°C to 150°C TJ. The JESD-609 Code for this product is e3. The maximum power dissipation is 830mW. It has a dual element configuration and is designed for switching applications. The continuous drain current (ID) is 3.3A. The FET technology used in this product is metal-oxide semiconductor. The width of the device is 1.7mm.
NTGD1100LT1G Features
Resistance of 40MOhm
Transistor applications such as SWITCHING
NTGD1100LT1G Applications
There are a lot of ON Semiconductor NTGD1100LT1G Power Switches ICs applications.
HDD and SSD
Hot Swaps
USB Protection
PC Card Hot Swap
Smartphone and PDA
Set-Top Boxes
USB Ports/Hubs
Solid State Drivers
Portable/Handheld Devices
USB Power Distribution
The product is a surface mount device with 6 pins. It can operate in a wide temperature range from -55°C to 150°C TJ. The JESD-609 Code for this product is e3. The maximum power dissipation is 830mW. It has a dual element configuration and is designed for switching applications. The continuous drain current (ID) is 3.3A. The FET technology used in this product is metal-oxide semiconductor. The width of the device is 1.7mm.
NTGD1100LT1G Features
Resistance of 40MOhm
Transistor applications such as SWITCHING
NTGD1100LT1G Applications
There are a lot of ON Semiconductor NTGD1100LT1G Power Switches ICs applications.
HDD and SSD
Hot Swaps
USB Protection
PC Card Hot Swap
Smartphone and PDA
Set-Top Boxes
USB Ports/Hubs
Solid State Drivers
Portable/Handheld Devices
USB Power Distribution
NTGD1100LT1G More Descriptions
P-Channel 8 V 40 mOhm 0.83 W Surface Mount Power MOSFET - TSOP-6
Dual P-Channel Small Signal MOSFET with Level-Shift -8V, -3.3A, 55mΩ Small Signal MOSFET 8V 3.3 A 55 mOhm Dual P-Channel TSOP6 with Level-Shift
NTGD1100LT1G Dual N/P-channel MOSFET Transistor, 3.3 A, 8 V, 6-Pin TSOP | ON Semiconductor NTGD1100LT1G
Transistor Polarity:complementary N And P Channel; Drain Source Voltage Vds:8V; Continuous Drain Current Id:-; On Resistance Rds(On):0.04Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; No. Of Pins:6Pins Rohs Compliant: Yes
Small Signal Field-Effect Transistor, 3.3A I(D), 8V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
Dual P-Channel Small Signal MOSFET with Level-Shift -8V, -3.3A, 55mΩ Small Signal MOSFET 8V 3.3 A 55 mOhm Dual P-Channel TSOP6 with Level-Shift
NTGD1100LT1G Dual N/P-channel MOSFET Transistor, 3.3 A, 8 V, 6-Pin TSOP | ON Semiconductor NTGD1100LT1G
Transistor Polarity:complementary N And P Channel; Drain Source Voltage Vds:8V; Continuous Drain Current Id:-; On Resistance Rds(On):0.04Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; No. Of Pins:6Pins Rohs Compliant: Yes
Small Signal Field-Effect Transistor, 3.3A I(D), 8V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
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