NTGD1100LT1G

ON Semiconductor NTGD1100LT1G

Part Number:
NTGD1100LT1G
Manufacturer:
ON Semiconductor
Ventron No:
3742316-NTGD1100LT1G
Description:
MOSFET N/P-CH 8V 3.3A 6-TSOP
ECAD Model:
Datasheet:
NTGD1100LT1G

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Specifications
ON Semiconductor NTGD1100LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTGD1100LT1G.
  • Factory Lead Time
    2 Weeks
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6
  • Surface Mount
    YES
  • Number of Pins
    6
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2001
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Resistance
    40MOhm
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    20V
  • Max Power Dissipation
    830mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    3.3A
  • Reflow Temperature-Max (s)
    40
  • Base Part Number
    NTGD1100L
  • Pin Count
    6
  • Number of Outputs
    1
  • Output Type
    P-Channel
  • Number of Elements
    2
  • Interface
    On/Off
  • Element Configuration
    Dual
  • Output Configuration
    High Side
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    830mW
  • Switch Type
    General Purpose
  • Transistor Application
    SWITCHING
  • Drain to Source Voltage (Vdss)
    8V
  • Continuous Drain Current (ID)
    3.3A
  • Ratio - Input:Output
    1:1
  • Gate to Source Voltage (Vgs)
    8V
  • Voltage - Load
    1.8V~8V
  • Drain to Source Breakdown Voltage
    8V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Rds On (Typ)
    40m Ω
  • Drain to Source Resistance
    80mOhm
  • Height
    1mm
  • Length
    3.1mm
  • Width
    1.7mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NTGD1100LT1G Overview
The product is a surface mount device with 6 pins. It can operate in a wide temperature range from -55°C to 150°C TJ. The JESD-609 Code for this product is e3. The maximum power dissipation is 830mW. It has a dual element configuration and is designed for switching applications. The continuous drain current (ID) is 3.3A. The FET technology used in this product is metal-oxide semiconductor. The width of the device is 1.7mm.

NTGD1100LT1G Features
Resistance of 40MOhm
Transistor applications such as SWITCHING

NTGD1100LT1G Applications
There are a lot of ON Semiconductor NTGD1100LT1G Power Switches ICs applications.

HDD and SSD
Hot Swaps
USB Protection
PC Card Hot Swap
Smartphone and PDA
Set-Top Boxes
USB Ports/Hubs
Solid State Drivers
Portable/Handheld Devices
USB Power Distribution
NTGD1100LT1G More Descriptions
P-Channel 8 V 40 mOhm 0.83 W Surface Mount Power MOSFET - TSOP-6
Dual P-Channel Small Signal MOSFET with Level-Shift -8V, -3.3A, 55mΩ Small Signal MOSFET 8V 3.3 A 55 mOhm Dual P-Channel TSOP6 with Level-Shift
NTGD1100LT1G Dual N/P-channel MOSFET Transistor, 3.3 A, 8 V, 6-Pin TSOP | ON Semiconductor NTGD1100LT1G
Transistor Polarity:complementary N And P Channel; Drain Source Voltage Vds:8V; Continuous Drain Current Id:-; On Resistance Rds(On):0.04Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; No. Of Pins:6Pins Rohs Compliant: Yes
Small Signal Field-Effect Transistor, 3.3A I(D), 8V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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