NTD20N06T4G

ON Semiconductor NTD20N06T4G

Part Number:
NTD20N06T4G
Manufacturer:
ON Semiconductor
Ventron No:
3070098-NTD20N06T4G
Description:
MOSFET N-CH 60V 20A DPAK
ECAD Model:
Datasheet:
NTD20N06T4G

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Specifications
ON Semiconductor NTD20N06T4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD20N06T4G.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2005
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    37.5MOhm
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    60V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    20A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    1.88W Ta 60W Tj
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    60W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    9.5 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    46m Ω @ 10A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1015pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    20A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    30nC @ 10V
  • Rise Time
    60.5ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    37.1 ns
  • Turn-Off Delay Time
    27.1 ns
  • Continuous Drain Current (ID)
    20A
  • Threshold Voltage
    2.91V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    60V
  • Pulsed Drain Current-Max (IDM)
    60A
  • Height
    4.83mm
  • Length
    10.29mm
  • Width
    9.65mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NTD20N06T4G Description Designed for low voltage, high-speed switching applications in power supplies, converters and power motor controls, and bridge circuits.

NTD20N06T4G Features Lower RDS(on) Lower VDS(on) Lower Capacitances Lower Total Gate Charge Lower and Tighter VSD Lower Diode Reverse Recovery Time Lower Reverse Recovery Stored Charge NTDV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable These Devices are Pb?Free and are RoHS Compliant

NTD20N06T4G Applications Power Supplies Converters Power Motor Controls Bridge Circuits


NTD20N06T4G More Descriptions
NTD20N06T4G N-channel MOSFET Transistor, 20 A, 60 V, 3-Pin D2PAK | ON Semiconductor NTD20N06T4G
N-Channel 60 V 37.5 mOhm 60 W Tab Mount Power MOSFET - TO-252-3
Single N-Channel Power MOSFET 60V, 20A, 46mΩ
MOSFET, N CHANNEL, 60V, 20A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0375ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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