ON Semiconductor NTD20N06T4G
- Part Number:
- NTD20N06T4G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3070098-NTD20N06T4G
- Description:
- MOSFET N-CH 60V 20A DPAK
- Datasheet:
- NTD20N06T4G
ON Semiconductor NTD20N06T4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD20N06T4G.
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Resistance37.5MOhm
- SubcategoryFET General Purpose Power
- Voltage - Rated DC60V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating20A
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Power Dissipation-Max1.88W Ta 60W Tj
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation60W
- Case ConnectionDRAIN
- Turn On Delay Time9.5 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs46m Ω @ 10A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1015pF @ 25V
- Current - Continuous Drain (Id) @ 25°C20A Ta
- Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
- Rise Time60.5ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)37.1 ns
- Turn-Off Delay Time27.1 ns
- Continuous Drain Current (ID)20A
- Threshold Voltage2.91V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage60V
- Pulsed Drain Current-Max (IDM)60A
- Height4.83mm
- Length10.29mm
- Width9.65mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NTD20N06T4G Description
Designed for low voltage, high-speed switching applications in power supplies, converters and power motor controls, and bridge circuits.
NTD20N06T4G Features Lower RDS(on) Lower VDS(on) Lower Capacitances Lower Total Gate Charge Lower and Tighter VSD Lower Diode Reverse Recovery Time Lower Reverse Recovery Stored Charge NTDV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable These Devices are Pb?Free and are RoHS Compliant
NTD20N06T4G Applications Power Supplies Converters Power Motor Controls Bridge Circuits
NTD20N06T4G Features Lower RDS(on) Lower VDS(on) Lower Capacitances Lower Total Gate Charge Lower and Tighter VSD Lower Diode Reverse Recovery Time Lower Reverse Recovery Stored Charge NTDV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable These Devices are Pb?Free and are RoHS Compliant
NTD20N06T4G Applications Power Supplies Converters Power Motor Controls Bridge Circuits
NTD20N06T4G More Descriptions
NTD20N06T4G N-channel MOSFET Transistor, 20 A, 60 V, 3-Pin D2PAK | ON Semiconductor NTD20N06T4G
N-Channel 60 V 37.5 mOhm 60 W Tab Mount Power MOSFET - TO-252-3
Single N-Channel Power MOSFET 60V, 20A, 46mΩ
MOSFET, N CHANNEL, 60V, 20A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0375ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.
N-Channel 60 V 37.5 mOhm 60 W Tab Mount Power MOSFET - TO-252-3
Single N-Channel Power MOSFET 60V, 20A, 46mΩ
MOSFET, N CHANNEL, 60V, 20A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0375ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.
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