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NSVMUN5312DW1T3G

ON Semiconductor NSVMUN5312DW1T3G

Part Number:
NSVMUN5312DW1T3G
Manufacturer:
ON Semiconductor
Ventron No:
2844599-NSVMUN5312DW1T3G
Description:
TRANS NPN/PNP 50V BIPO SC88-6
ECAD Model:
Datasheet:
NSVMUN5312DW1T3G

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Specifications
ON Semiconductor NSVMUN5312DW1T3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSVMUN5312DW1T3G.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    8 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Transistor Element Material
    SILICON
  • Packaging
    Tape & Reel (TR)
  • Published
    2014
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • Terminal Finish
    Tin (Sn)
  • Additional Feature
    BUILT IN BIAS RESISTANCE RATIO IS 1
  • Subcategory
    BIP General Purpose Small Signal
  • Max Power Dissipation
    250mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Reference Standard
    AEC-Q101
  • JESD-30 Code
    R-PDSO-G6
  • Operating Temperature (Max)
    150°C
  • Operating Temperature (Min)
    -55°C
  • Number of Elements
    2
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
  • Power - Max
    250mW
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN AND PNP
  • Transistor Type
    1 NPN, 1 PNP - Pre-Biased (Dual)
  • Collector Emitter Voltage (VCEO)
    250mV
  • Max Collector Current
    100mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    60 @ 5mA 10V
  • Current - Collector Cutoff (Max)
    500nA
  • Vce Saturation (Max) @ Ib, Ic
    250mV @ 300μA, 10mA
  • Collector Emitter Breakdown Voltage
    50V
  • Resistor - Base (R1)
    22k Ω
  • Resistor - Emitter Base (R2)
    22k Ω
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NSVMUN5312DW1T3G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSVMUN5312DW1T3G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSVMUN5312DW1T3G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NSVMUN5312DW1T3G More Descriptions
Transistor Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-363 T/R
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Complementary Bipolar Digital Transistor (BRT)
Tape & Reel (TR) Surface Mount NPN AND PNP SEPARATE 2ELEMENTS WITH BUILT-IN RESISTOR Pre-Biased Bipolar Transistor (BJT) 60 @ 5mA 10V 500nA 250mW 50V
Rf Transistor, Compl, 50V, 0.1A, Sot-363; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:22Kohm Rohs Compliant: Yes |Onsemi NSVMUN5312DW1T3G
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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