ON Semiconductor NSM21356DW6T1G
- Part Number:
- NSM21356DW6T1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2844522-NSM21356DW6T1G
- Description:
- TRANS NPN PREBIAS/PNP SOT363
- Datasheet:
- NSM21356DW6T1G
ON Semiconductor NSM21356DW6T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSM21356DW6T1G.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Number of Pins6
- Transistor Element MaterialSILICON
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Additional FeatureBUILT IN BIAS RESISTOR RATIO IS 1
- HTS Code8541.21.00.95
- Max Power Dissipation230mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count6
- Qualification StatusNot Qualified
- Number of Elements2
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Power - Max230mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN AND PNP
- Transistor Type1 NPN Pre-Biased, 1 PNP
- Collector Emitter Voltage (VCEO)250mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA 10V / 220 @ 2mA 5V
- Current - Collector Cutoff (Max)500nA
- Vce Saturation (Max) @ Ib, Ic250mV @ 300μA, 10mA / 650mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage65V
- Voltage - Collector Emitter Breakdown (Max)50V 65V
- Resistor - Base (R1)47k Ω
- Resistor - Emitter Base (R2)47k Ω
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
NSM21356DW6T1G Overview
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSM21356DW6T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSM21356DW6T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by ON Semiconductor and belongs to the category of Transistors - Bipolar (BJT) - Arrays, Pre-Biased. The images we provide are for reference only, for detailed product information please see specification sheet NSM21356DW6T1G or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of NSM21356DW6T1G. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
NSM21356DW6T1G More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
SMALL SIGNAL BIPOLAR TRANSISTOR
Tape & Reel (TR) Surface Mount NPN AND PNP SEPARATE 2ELEMENTS WITH BUILT-IN RESISTOR Pre-Biased Bipolar Transistor (BJT) 80 @ 5mA 10V / 220 @ 2mA 5V 500nA 230mW 65V
SMALL SIGNAL BIPOLAR TRANSISTOR
Tape & Reel (TR) Surface Mount NPN AND PNP SEPARATE 2ELEMENTS WITH BUILT-IN RESISTOR Pre-Biased Bipolar Transistor (BJT) 80 @ 5mA 10V / 220 @ 2mA 5V 500nA 230mW 65V
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