ON Semiconductor NSCT817-40LT1G
- Part Number:
- NSCT817-40LT1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3553960-NSCT817-40LT1G
- Description:
- TRANS NPN 45V 0.1A SOT-23
- Datasheet:
- NSCT817-25,-40 LT1G
ON Semiconductor NSCT817-40LT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NSCT817-40LT1G.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Supplier Device PackageSOT-23-3 (TO-236)
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC45V
- Max Power Dissipation225mW
- Current Rating100mA
- Base Part NumberNSCT817
- Power - Max225mW
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)700mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce250 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage45V
- Voltage - Collector Emitter Breakdown (Max)45V
- Current - Collector (Ic) (Max)100mA
- Frequency - Transition100MHz
- Collector Base Voltage (VCBO)50V
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
NSCT817-40LT1G Overview
This device has a DC current gain of 250 @ 100mA 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).This device has a current rating of 100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Product package SOT-23-3 (TO-236) comes from the supplier.Collector Emitter Breakdown occurs at 45VV - Maximum voltage.A maximum collector current of 100mA volts is possible.
NSCT817-40LT1G Features
the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the current rating of this device is 100mA
the supplier device package of SOT-23-3 (TO-236)
NSCT817-40LT1G Applications
There are a lot of ON Semiconductor
NSCT817-40LT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 250 @ 100mA 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 700mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).This device has a current rating of 100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Product package SOT-23-3 (TO-236) comes from the supplier.Collector Emitter Breakdown occurs at 45VV - Maximum voltage.A maximum collector current of 100mA volts is possible.
NSCT817-40LT1G Features
the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the current rating of this device is 100mA
the supplier device package of SOT-23-3 (TO-236)
NSCT817-40LT1G Applications
There are a lot of ON Semiconductor
NSCT817-40LT1G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
NSCT817-40LT1G More Descriptions
TRANS NPN 45V 0.1A SOT-23
XSTR NPN 45V CU WIRE
RES SMD 820 OHM 5% 1/8W 0805
XSTR NPN 45V CU WIRE
RES SMD 820 OHM 5% 1/8W 0805
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