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MUR880EG

ON Semiconductor MUR880EG

Part Number:
MUR880EG
Manufacturer:
ON Semiconductor
Ventron No:
2424211-MUR880EG
Description:
DIODE GEN PURP 800V 8A TO220AC
ECAD Model:
Datasheet:
MUR880EG

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Specifications
ON Semiconductor MUR880EG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MUR880EG.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    11 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-2
  • Surface Mount
    NO
  • Number of Pins
    2
  • Weight
    4.535924g
  • Diode Element Material
    SILICON
  • Packaging
    Tube
  • Series
    SWITCHMODE™
  • Published
    2006
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -65°C
  • Additional Feature
    FREE WHEELING DIODE
  • HTS Code
    8541.10.00.80
  • Subcategory
    Rectifier Diodes
  • Voltage - Rated DC
    800V
  • Technology
    AVALANCHE
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    8A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    2
  • Number of Elements
    1
  • Element Configuration
    Single
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Standard
  • Current - Reverse Leakage @ Vr
    25μA @ 800V
  • Output Current
    8A
  • Voltage - Forward (Vf) (Max) @ If
    1.8V @ 8A
  • Case Connection
    CATHODE
  • Forward Current
    8A
  • Operating Temperature - Junction
    -65°C~175°C
  • Max Surge Current
    100A
  • Application
    ULTRA FAST RECOVERY POWER
  • Breakdown Voltage
    800V
  • Forward Voltage
    1.8V
  • Max Reverse Voltage (DC)
    800V
  • Average Rectified Current
    8A
  • Number of Phases
    1
  • Reverse Recovery Time
    100 ns
  • Peak Reverse Current
    25μA
  • Max Repetitive Reverse Voltage (Vrrm)
    800V
  • Peak Non-Repetitive Surge Current
    100A
  • Reverse Voltage
    800V
  • Max Forward Surge Current (Ifsm)
    100A
  • Recovery Time
    100 ns
  • Height
    9.27mm
  • Length
    10.29mm
  • Width
    4.82mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MUR880EG Overview
800V is a reasonable reverse voltage.There is an average rectified current of 8A volts for this device.The allowable value of forward current reaches 8A.Its current rating is 8A, which is the maximum current that a fuse will carry for an indefinite period without too much deterioration of the fuse element. 100A is the maximum value of surge current that can be used.In the datasheets, the peak reverse is 25μA, as indicated by the data chart.Breakdown voltage is a parameter of a diode that defines the largest reverse voltage that can be applied without causing an exponential increase in the leakage current in the diode, and its breakdown voltage is 800V.

MUR880EG Features
an average rectified current of 8A volts
a current rating of 8A
the peak reverse is 25μA
the breakdown voltage of a diode is 800V


MUR880EG Applications
There are a lot of ON Semiconductor
MUR880EG applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
MUR880EG More Descriptions
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 8A, 800V V(RRM), Silicon, TO-220AC
Rectifier Diode Switching 800V 8A 100ns 2-Pin(2 Tab) TO-220AC Tube
Power Rectifier, Ultra-Fast Recovery, Switch-mode, 8 A, 800 V
MUR Series 8 A 1000 V 75 ns Flange Mount SWITCHMODE™ Power Rectifier - TO-220AC
ON Semi MUR880EG, Switching Diode, 800V 8A, 100ns, 2-Pin TO-220AC
RECTIFIER, FAST, 8A, 800V, TO-220AC; Repetitive Reverse Voltage Vrrm Max: 800V; Forward Current If(AV): 8A; Diode Configuration: Single; Forward Voltage VF Max: 1.8V; Reverse Recovery Time trr Max: 100ns; Forward Surge Curren
Ultrafast "E" Series with High Reverse Energy Capability . . . designed for use in switching power supplies inverters and as free wheeling diodes these state-of-the-art devices have the following
Product Comparison
The three parts on the right have similar specifications to MUR880EG.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Weight
    Diode Element Material
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    HTS Code
    Subcategory
    Voltage - Rated DC
    Technology
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Element Configuration
    Speed
    Diode Type
    Current - Reverse Leakage @ Vr
    Output Current
    Voltage - Forward (Vf) (Max) @ If
    Case Connection
    Forward Current
    Operating Temperature - Junction
    Max Surge Current
    Application
    Breakdown Voltage
    Forward Voltage
    Max Reverse Voltage (DC)
    Average Rectified Current
    Number of Phases
    Reverse Recovery Time
    Peak Reverse Current
    Max Repetitive Reverse Voltage (Vrrm)
    Peak Non-Repetitive Surge Current
    Reverse Voltage
    Max Forward Surge Current (Ifsm)
    Recovery Time
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Mount
    Terminal Finish
    Reach Compliance Code
    Base Part Number
    Qualification Status
    Output Current-Max
    Natural Thermal Resistance
    Supplier Device Package
    Polarity
    Voltage - DC Reverse (Vr) (Max)
    Current - Average Rectified (Io)
    View Compare
  • MUR880EG
    MUR880EG
    ON Semiconductor
    ACTIVE (Last Updated: 3 days ago)
    11 Weeks
    Tin
    Through Hole
    TO-220-2
    NO
    2
    4.535924g
    SILICON
    Tube
    SWITCHMODE™
    2006
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    175°C
    -65°C
    FREE WHEELING DIODE
    8541.10.00.80
    Rectifier Diodes
    800V
    AVALANCHE
    260
    8A
    40
    2
    1
    Single
    Fast Recovery =< 500ns, > 200mA (Io)
    Standard
    25μA @ 800V
    8A
    1.8V @ 8A
    CATHODE
    8A
    -65°C~175°C
    100A
    ULTRA FAST RECOVERY POWER
    800V
    1.8V
    800V
    8A
    1
    100 ns
    25μA
    800V
    100A
    800V
    100A
    100 ns
    9.27mm
    10.29mm
    4.82mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • VS-MUR820PBF
    VS-MUR820PBF
    Vishay Semiconductor Diodes Division
    -
    11 Weeks
    -
    Through Hole
    TO-220-2
    -
    2
    -
    SILICON
    Tube
    -
    2004
    e3
    -
    Discontinued
    1 (Unlimited)
    2
    EAR99
    175°C
    -65°C
    FREE WHEELING DIODE, LOW LEAKAGE CURRENT
    8541.10.00.80
    Rectifier Diodes
    -
    -
    NOT APPLICABLE
    -
    NOT APPLICABLE
    3
    1
    Single
    Fast Recovery =< 500ns, > 200mA (Io)
    Standard, Reverse Polarity
    5μA @ 200V
    -
    975mV @ 8A
    CATHODE
    8A
    -65°C~175°C
    100A
    ULTRA FAST RECOVERY
    -
    975mV
    200V
    8A
    1
    35 ns
    5μA
    200V
    100A
    200V
    100A
    35 ns
    9.02mm
    10.4902mm
    4.6482mm
    No SVHC
    -
    ROHS3 Compliant
    Lead Free
    Through Hole
    MATTE TIN OVER NICKEL
    unknown
    MUR820
    Not Qualified
    8A
    0.5 °C/W
    -
    -
    -
    -
    MUR880EG vs VS-MUR820PBF
  • MUR810G
    MUR810G
    ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    4 Weeks
    Tin
    Through Hole
    TO-220-2
    NO
    2
    4.535924g
    SILICON
    Tube
    SWITCHMODE™
    2000
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    175°C
    -65°C
    FREE WHEELING DIODE, LOW LEAKAGE CURRENT
    8541.10.00.80
    Rectifier Diodes
    100V
    -
    260
    8A
    40
    2
    1
    Single
    Fast Recovery =< 500ns, > 200mA (Io)
    Standard
    5μA @ 100V
    8A
    975mV @ 8A
    CATHODE
    8A
    -65°C~175°C
    100A
    ULTRA FAST RECOVERY POWER
    100V
    975mV
    100V
    8A
    1
    35 ns
    5μA
    100V
    100A
    100V
    100A
    35 ns
    6.35mm
    6.35mm
    25.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    MUR880EG vs MUR810G
  • MUR810
    MUR810
    ON Semiconductor
    LAST SHIPMENTS (Last Updated: 3 days ago)
    -
    -
    Through Hole
    TO-220-2
    -
    2
    -
    -
    Tube
    SWITCHMODE™
    2009
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    175°C
    -65°C
    -
    -
    -
    100V
    -
    -
    8A
    -
    -
    -
    Single
    Fast Recovery =< 500ns, > 200mA (Io)
    Standard
    5μA @ 100V
    8A
    975mV @ 8A
    -
    -
    -65°C~175°C
    100A
    -
    100V
    -
    100V
    8A
    -
    35ns
    5μA
    100V
    -
    100V
    100A
    35 ns
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    TO-220-2
    Standard
    100V
    8A
    MUR880EG vs MUR810
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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