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MUR810G

ON Semiconductor MUR810G

Part Number:
MUR810G
Manufacturer:
ON Semiconductor
Ventron No:
2824917-MUR810G
Description:
DIODE GEN PURP 100V 8A TO220-2
ECAD Model:
Datasheet:
MUR810G

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Specifications
ON Semiconductor MUR810G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor MUR810G.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    4 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-2
  • Surface Mount
    NO
  • Number of Pins
    2
  • Weight
    4.535924g
  • Diode Element Material
    SILICON
  • Packaging
    Tube
  • Series
    SWITCHMODE™
  • Published
    2000
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -65°C
  • Additional Feature
    FREE WHEELING DIODE, LOW LEAKAGE CURRENT
  • HTS Code
    8541.10.00.80
  • Subcategory
    Rectifier Diodes
  • Voltage - Rated DC
    100V
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    8A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    2
  • Number of Elements
    1
  • Element Configuration
    Single
  • Speed
    Fast Recovery =< 500ns, > 200mA (Io)
  • Diode Type
    Standard
  • Current - Reverse Leakage @ Vr
    5μA @ 100V
  • Output Current
    8A
  • Voltage - Forward (Vf) (Max) @ If
    975mV @ 8A
  • Case Connection
    CATHODE
  • Forward Current
    8A
  • Operating Temperature - Junction
    -65°C~175°C
  • Max Surge Current
    100A
  • Application
    ULTRA FAST RECOVERY POWER
  • Breakdown Voltage
    100V
  • Forward Voltage
    975mV
  • Max Reverse Voltage (DC)
    100V
  • Average Rectified Current
    8A
  • Number of Phases
    1
  • Reverse Recovery Time
    35 ns
  • Peak Reverse Current
    5μA
  • Max Repetitive Reverse Voltage (Vrrm)
    100V
  • Peak Non-Repetitive Surge Current
    100A
  • Reverse Voltage
    100V
  • Max Forward Surge Current (Ifsm)
    100A
  • Recovery Time
    35 ns
  • Height
    6.35mm
  • Length
    6.35mm
  • Width
    25.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
MUR810G Overview
There is no reason to reverse the voltage at 100V.Devices like this have an average rectified current of 8A volts.There is no limit to the forward current value.Having a current rating of 8A means it can carry the maximum current an indefinite period without deterioration.Surge current can reach maximum value 100A.On the data sheets, the peak reverse is indicated by the data chart as 5μA.A diode's breakdown voltage indicates the maximum reverse voltage that can be applied without causing an exponential increase in leakage current in the diode, and its breakdown voltage is 100V.

MUR810G Features
an average rectified current of 8A volts
a current rating of 8A
the peak reverse is 5μA
the breakdown voltage of a diode is 100V


MUR810G Applications
There are a lot of ON Semiconductor
MUR810G applications of single-phase diode rectifier.


DC motor control and drives
Battery chargers
Welders
Power converters
Reverse Polarity Protection
Ultra High-Speed Switching
Freewheeling
Polarity Protection Diode
Recirculating Diode
Switching Diode
MUR810G More Descriptions
Rectifier Diode, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, TO-220AC
Rectifier Diode Switching 100V 8A 35ns 2-Pin(2 Tab) TO-220AC Tube
MUR Series 8 A 100 V 25 ns Flange Mount SWITCHMODE™ Power Rectifier - TO-220AC
Power Rectifier, Ultra-Fast Recovery, Switch-mode, 8 A, 100 V
Diode,Rectifier,Ultrafast,Vr 100V,If 8A,Pkg TO-220AC,Vf 0.895V,Trr 35ns,Cs 100A | ON Semiconductor MUR810G
...designed for use in switching power supplies inverters and as free wheeling diodes these state-of-the-art devices have the following
RECTIFIER, SINGLE, 8A, 100V, TO-220AC; Repetitive Reverse Voltage Vrrm Max: 100V; Forward Current If(AV): 8A; Diode Configuration: Single; Forward Voltage VF Max: 975mV; Reverse Recovery Time trr Max: 35ns; Forward Surge Curr
Product Comparison
The three parts on the right have similar specifications to MUR810G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Weight
    Diode Element Material
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    HTS Code
    Subcategory
    Voltage - Rated DC
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Element Configuration
    Speed
    Diode Type
    Current - Reverse Leakage @ Vr
    Output Current
    Voltage - Forward (Vf) (Max) @ If
    Case Connection
    Forward Current
    Operating Temperature - Junction
    Max Surge Current
    Application
    Breakdown Voltage
    Forward Voltage
    Max Reverse Voltage (DC)
    Average Rectified Current
    Number of Phases
    Reverse Recovery Time
    Peak Reverse Current
    Max Repetitive Reverse Voltage (Vrrm)
    Peak Non-Repetitive Surge Current
    Reverse Voltage
    Max Forward Surge Current (Ifsm)
    Recovery Time
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Mount
    Terminal Finish
    Reach Compliance Code
    Base Part Number
    Qualification Status
    Output Current-Max
    Natural Thermal Resistance
    Supplier Device Package
    Polarity
    Voltage - DC Reverse (Vr) (Max)
    Current - Average Rectified (Io)
    Voltage - Forward (Vf) (Max) @ If:
    Voltage - DC Reverse (Vr) (Max):
    Supplier Device Package:
    Speed:
    Series:
    Reverse Recovery Time (trr):
    Packaging:
    Package / Case:
    Operating Temperature - Junction:
    Mounting Type:
    Diode Type:
    Current - Reverse Leakage @ Vr:
    Current - Average Rectified (Io):
    Capacitance @ Vr, F:
    View Compare
  • MUR810G
    MUR810G
    ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    4 Weeks
    Tin
    Through Hole
    TO-220-2
    NO
    2
    4.535924g
    SILICON
    Tube
    SWITCHMODE™
    2000
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    175°C
    -65°C
    FREE WHEELING DIODE, LOW LEAKAGE CURRENT
    8541.10.00.80
    Rectifier Diodes
    100V
    260
    8A
    40
    2
    1
    Single
    Fast Recovery =< 500ns, > 200mA (Io)
    Standard
    5μA @ 100V
    8A
    975mV @ 8A
    CATHODE
    8A
    -65°C~175°C
    100A
    ULTRA FAST RECOVERY POWER
    100V
    975mV
    100V
    8A
    1
    35 ns
    5μA
    100V
    100A
    100V
    100A
    35 ns
    6.35mm
    6.35mm
    25.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • VS-MUR820PBF
    VS-MUR820PBF
    Vishay Semiconductor Diodes Division
    -
    11 Weeks
    -
    Through Hole
    TO-220-2
    -
    2
    -
    SILICON
    Tube
    -
    2004
    e3
    -
    Discontinued
    1 (Unlimited)
    2
    EAR99
    175°C
    -65°C
    FREE WHEELING DIODE, LOW LEAKAGE CURRENT
    8541.10.00.80
    Rectifier Diodes
    -
    NOT APPLICABLE
    -
    NOT APPLICABLE
    3
    1
    Single
    Fast Recovery =< 500ns, > 200mA (Io)
    Standard, Reverse Polarity
    5μA @ 200V
    -
    975mV @ 8A
    CATHODE
    8A
    -65°C~175°C
    100A
    ULTRA FAST RECOVERY
    -
    975mV
    200V
    8A
    1
    35 ns
    5μA
    200V
    100A
    200V
    100A
    35 ns
    9.02mm
    10.4902mm
    4.6482mm
    No SVHC
    -
    ROHS3 Compliant
    Lead Free
    Through Hole
    MATTE TIN OVER NICKEL
    unknown
    MUR820
    Not Qualified
    8A
    0.5 °C/W
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    MUR810G vs VS-MUR820PBF
  • MUR810
    MUR810
    ON Semiconductor
    LAST SHIPMENTS (Last Updated: 3 days ago)
    -
    -
    Through Hole
    TO-220-2
    -
    2
    -
    -
    Tube
    SWITCHMODE™
    2009
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    175°C
    -65°C
    -
    -
    -
    100V
    -
    8A
    -
    -
    -
    Single
    Fast Recovery =< 500ns, > 200mA (Io)
    Standard
    5μA @ 100V
    8A
    975mV @ 8A
    -
    -
    -65°C~175°C
    100A
    -
    100V
    -
    100V
    8A
    -
    35ns
    5μA
    100V
    -
    100V
    100A
    35 ns
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    TO-220-2
    Standard
    100V
    8A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    MUR810G vs MUR810
  • MUR860
    MUR860
    Fairchild/ON Semiconductor
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    1.5V @ 8A
    600V
    TO-220AC
    Fast Recovery = 200mA (Io)
    -
    70ns
    Tube
    TO-220-2
    -65°C ~ 175°C
    Through Hole
    Standard
    100µA @ 600V
    8A
    -
    MUR810G vs MUR860
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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