GeneSiC Semiconductor MUR30020CT
- Part Number:
- MUR30020CT
- Manufacturer:
- GeneSiC Semiconductor
- Ventron No:
- 2420183-MUR30020CT
- Description:
- DIODE MODULE 200V 300A 2TOWER
- ECAD Model:
-
- Datasheet:
- MUR30020CT
GeneSiC Semiconductor MUR30020CT technical specifications, attributes, parameters and parts with similar specifications to GeneSiC Semiconductor MUR30020CT.
- Lifecycle StatusPRODUCTION (Last Updated: 6 months ago)
- Factory Lead Time6 Weeks
- MountChassis Mount
- Mounting TypeChassis Mount
- Package / CaseTwin Tower
- Number of Pins2
- Diode Element MaterialSILICON
- PackagingBulk
- Published2010
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- Max Operating Temperature175°C
- Min Operating Temperature-40°C
- Terminal PositionUPPER
- Terminal FormUNSPECIFIED
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Number of Elements2
- Element ConfigurationCommon Cathode
- SpeedFast Recovery =< 500ns, > 200mA (Io)
- Diode TypeStandard
- Current - Reverse Leakage @ Vr25μA @ 50V
- Voltage - Forward (Vf) (Max) @ If1.3V @ 100A
- Forward Current100A
- Operating Temperature - Junction-55°C~150°C
- Max Surge Current1.5kA
- Output Current-Max150A
- ApplicationSUPER FAST RECOVERY
- Current - Average Rectified (Io)300A DC
- Forward Voltage1.3V
- Max Reverse Voltage (DC)200V
- Average Rectified Current300A
- Number of Phases1
- Reverse Recovery Time90 ns
- Peak Reverse Current25μA
- Max Repetitive Reverse Voltage (Vrrm)200V
- Reverse Voltage200V
- Diode Configuration1 Pair Common Cathode
- Max Forward Surge Current (Ifsm)1.5kA
- RoHS StatusRoHS Compliant
MUR30020CT Overview
In this case, the forward voltage has to be set at 1.3V to operate the device.An output voltage of 150A is the maximum it can handle.Maintaining a surge current under 1.5kA and not letting it exceed it is the key to preventing it.In this case, the forward voltage has to be set at 100A to operate the device.A reverse voltage peak of 25μA is applied to devices like this one.
MUR30020CT Features
1.3V forward voltage
a maximum output voltage of 150A
a peak voltage of 25μA
a reverse voltage peak of 25μA
MUR30020CT Applications
There are a lot of GeneSiC Semiconductor
MUR30020CT applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
In this case, the forward voltage has to be set at 1.3V to operate the device.An output voltage of 150A is the maximum it can handle.Maintaining a surge current under 1.5kA and not letting it exceed it is the key to preventing it.In this case, the forward voltage has to be set at 100A to operate the device.A reverse voltage peak of 25μA is applied to devices like this one.
MUR30020CT Features
1.3V forward voltage
a maximum output voltage of 150A
a peak voltage of 25μA
a reverse voltage peak of 25μA
MUR30020CT Applications
There are a lot of GeneSiC Semiconductor
MUR30020CT applications of rectifier diode array.
Rectifier for drives applications
Crowbar applications
Rectifiers for UBS
Battery chargers
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
General Rectification
MUR30020CT More Descriptions
200V 300A Twin Tower Silicon Rectifier Module - Super Fast Recovery (Standard Configuration)
Fast Recovery Diode, 200V, 300A, Twin Tower; Repetitive Peak Reverse Voltage:200V; Average Forward Current:100A; Forward Voltage Max:1.3V; Diode Module Configuration:-; Diode Case Style:Module; No. Of Pins:2Pins; Diode Mounting:Panelrohs Compliant: Yes |Genesic Semiconductor MUR30020CT
DIODE, RECTIF, 200V, 300A, TWIN TOW; Diode Type:Fast Recovery; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):100A; Forward Voltage VF Max:1.3V; Reverse Recovery Time trr Max:90ns; Forward Surge Current Ifsm Max:1.5kA; Operating Temperature Range:-40°C to 175°C; Diode Case Style:Twin Tower; No. of Pins:2
Fast Recovery Diode, 200V, 300A, Twin Tower; Repetitive Peak Reverse Voltage:200V; Average Forward Current:100A; Forward Voltage Max:1.3V; Diode Module Configuration:-; Diode Case Style:Module; No. Of Pins:2Pins; Diode Mounting:Panelrohs Compliant: Yes |Genesic Semiconductor MUR30020CT
DIODE, RECTIF, 200V, 300A, TWIN TOW; Diode Type:Fast Recovery; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):100A; Forward Voltage VF Max:1.3V; Reverse Recovery Time trr Max:90ns; Forward Surge Current Ifsm Max:1.5kA; Operating Temperature Range:-40°C to 175°C; Diode Case Style:Twin Tower; No. of Pins:2
The three parts on the right have similar specifications to MUR30020CT.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsDiode Element MaterialPackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsMax Operating TemperatureMin Operating TemperatureTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ElementsElement ConfigurationSpeedDiode TypeCurrent - Reverse Leakage @ VrVoltage - Forward (Vf) (Max) @ IfForward CurrentOperating Temperature - JunctionMax Surge CurrentOutput Current-MaxApplicationCurrent - Average Rectified (Io)Forward VoltageMax Reverse Voltage (DC)Average Rectified CurrentNumber of PhasesReverse Recovery TimePeak Reverse CurrentMax Repetitive Reverse Voltage (Vrrm)Reverse VoltageDiode ConfigurationMax Forward Surge Current (Ifsm)RoHS StatusSurface MountSeriesJESD-609 CodeECCN CodeTerminal FinishAdditional FeatureHTS CodeSubcategoryPin CountPeak Non-Repetitive Surge CurrentRecovery TimeRadiation HardeningLead FreeJESD-30 CodeOperating Temperature (Max)Non-rep Pk Forward Current-MaxContact PlatingBase Part NumberJEDEC-95 CodeHeightLengthWidthView Compare
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MUR30020CTPRODUCTION (Last Updated: 6 months ago)6 WeeksChassis MountChassis MountTwin Tower2SILICONBulk2010yesActive1 (Unlimited)2175°C-40°CUPPERUNSPECIFIEDNOT SPECIFIEDNOT SPECIFIED2Common CathodeFast Recovery =< 500ns, > 200mA (Io)Standard25μA @ 50V1.3V @ 100A100A-55°C~150°C1.5kA150ASUPER FAST RECOVERY300A DC1.3V200V300A190 ns25μA200V200V1 Pair Common Cathode1.5kARoHS Compliant----------------------- -
ACTIVE (Last Updated: 2 days ago)10 Weeks-Through HoleTO-247-33SILICONTube2002yesActive1 (Unlimited)3175°C-65°CSINGLE---2Common CathodeFast Recovery =< 500ns, > 200mA (Io)Standard10μA @ 400V1.25V @ 15A15A-65°C~175°C150A-ULTRA FAST RECOVERY POWER-1.25V400V15A160 ns10μA400V400V1 Pair Common Cathode150AROHS3 CompliantNOSWITCHMODE™e3EAR99Tin (Sn)FREE WHEELING DIODE8541.10.00.80Rectifier Diodes3150A60 nsNoLead Free---------
-
PRODUCTION (Last Updated: 4 months ago)6 WeeksChassis MountChassis MountTwin Tower-SILICONBulk-yesActive1 (Unlimited)2--UPPERUNSPECIFIED--2Common CathodeFast Recovery =< 500ns, > 200mA (Io)Standard25μA @ 50V1.7V @ 100A--55°C~150°C1.5kA150ASUPER FAST RECOVERY300A DC-600V300A190 ns25μA-600V1 Pair Common Cathode-RoHS Compliant-------------R-PUFM-X2150°C2750A------
-
-11 WeeksThrough HoleThrough HoleTO-247-33SILICONTube2008-Obsolete1 (Unlimited)3175°C-65°CSINGLE---2Common CathodeFast Recovery =< 500ns, > 200mA (Io)Standard10μA @ 200V1.05V @ 15A15A-65°C~175°C200A-ULTRA FAST RECOVERY-1.05V200V15A135 ns10μA200V200V1 Pair Common Cathode200AROHS3 Compliant-FRED Pt®e3EAR99-FREE WHEELING DIODE, LOW LEAKAGE CURRENT8541.10.00.80Rectifier Diodes3200A35 nsNoLead Free---TinMUR3020WTTO-247AC20.701mm15.875mm5.3086mm
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