Micron Technology Inc. MT4HTF3264HZ-667G1

Name: MT4HTF3264HZ-667G1
Brand: Micron Technology Inc.
SKU: 3863475-MT4HTF3264HZ-667G1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MT4HTF3264HZ-667G1

Manufacturer:: Micron Technology Inc.

Ventron No:: 3863475-MT4HTF3264HZ-667G1

Description:: MOD DDR2 SDRAM 256MB 200SODIMM

ECAD Model:

Datasheet:: MT4HTFyyyHZ

Specifications

Micron Technology Inc. MT4HTF3264HZ-667G1 technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT4HTF3264HZ-667G1.

Mount
Socket
Package / Case
200-SODIMM
Number of Pins
200
Published
2010
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
200
Terminal Finish
MATTE TIN
Max Operating Temperature
70°C
Min Operating Temperature
0°C
Subcategory
DRAMs
Technology
CMOS
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Supply Voltage
1.8V
Terminal Pitch
0.6mm
Time@Peak Reflow Temperature-Max (s)
30
Operating Supply Voltage
1.8V
Number of Elements
4
Temperature Grade
COMMERCIAL
Max Supply Voltage
1.9V
Min Supply Voltage
1.7V
Memory Size
256MB
Speed
667MT/s
Memory Type
DDR2 SDRAM
Clock Frequency
333MHz
Data Bus Width
64b
Output Characteristics
3-STATE
Memory Width
64
Standby Current-Max
0.028A
Max Frequency
667MHz
I/O Type
COMMON
Refresh Cycles
8192
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

part#MT4HTF3264HZ-667G1, Manufacturer:Micron Technology is available at ventronchip.com, see description of MT4HTF3264HZ-667G1 as below .use the request quote form to request MT4HTF3264HZ-667G1 price and lead time.Every pieces of Electronic Components you buy from ventronchip.com is warranty and quality guaranted.we are an independent distributor of electronic components with extensive inventory in stock.The price and lead time for MT4HTF3264HZ-667G1 depending on the quantity required, availability and warehouse location.

MT4HTF3264HZ-667G1 More Descriptions

U67A .256MB 32MX64 DDR2 SDRAM MODULE COMMERCIAL PBF SODIMM 1.8V NON BUF
MEMORY MODULESDRAMDDR32MX64CMOSDIMM200PINPLASTIC
CoC and 2-years warranty / RFQ for pricing
DRAM Module DDR2 SDRAM 256Mbyte 200SODIMM
MOD DDR2 SDRAM 256MB 200SODIMM

Product Comparison

The three parts on the right have similar specifications to MT4HTF3264HZ-667G1.

Image

Part Number

Manufacturer

Mount

Package / Case

Number of Pins

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Max Operating Temperature

Min Operating Temperature

Subcategory

Technology

Terminal Position

Peak Reflow Temperature (Cel)

Supply Voltage

Terminal Pitch

Time@Peak Reflow Temperature-Max (s)

Operating Supply Voltage

Number of Elements

Temperature Grade

Max Supply Voltage

Min Supply Voltage

Memory Size

Speed

Memory Type

Clock Frequency

Data Bus Width

Output Characteristics

Memory Width

Standby Current-Max

Max Frequency

I/O Type

Refresh Cycles

Radiation Hardening

RoHS Status

ECCN Code

Additional Feature

Number of Functions

Pin Count

Number of Ports

Organization

Memory Density

Access Mode

Height Seated (Max)

Length

Surface Mount

Packaging

Supply Current-Max

Access Time (Max)

Height

Lead Free

View Compare
MT4HTF3264HZ-667G1

Micron Technology Inc.

Socket

200-SODIMM

200

2010

e3

yes

Obsolete

3 (168 Hours)

200

MATTE TIN

70°C

0°C

DRAMs

CMOS

DUAL

260

1.8V

0.6mm

30

1.8V

4

COMMERCIAL

1.9V

1.7V

256MB

667MT/s

DDR2 SDRAM

333MHz

64b

3-STATE

64

0.028A

667MHz

COMMON

8192

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
MT4HTF3264AY-667B2

Micron Technology Inc.

-

240-UDIMM

-

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

256MB

667MT/s

DDR2 SDRAM

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MT4HTF3264HZ-667G1 vs MT4HTF3264AY-667B2
MT4HTF3264HZ-800G1

Micron Technology Inc.

Socket

200-SODIMM

200

2014

e3

yes

Obsolete

1 (Unlimited)

200

MATTE TIN

70°C

0°C

DRAMs

CMOS

DUAL

260

1.8V

0.6mm

30

1.8V

4

OTHER

1.9V

1.7V

256MB

800MT/s

DDR2 SDRAM

-

64b

3-STATE

16

0.028A

800MHz

COMMON

8192

No

ROHS3 Compliant

EAR99

AUTO/SELF REFRESH

1

200

1

32MX16

536870912 bit

SINGLE BANK PAGE BURST

30.15mm

67.6mm

-

-

-

-

-

-

MT4HTF3264HZ-667G1 vs MT4HTF3264HZ-800G1
MT4HTF3264HY-53ED3

Micron Technology Inc.

-

200-SODIMM

200

2004

-

-

Obsolete

1 (Unlimited)

200

-

70°C

0°C

DRAMs

CMOS

DUAL

-

1.8V

0.6mm

-

1.8V

-

COMMERCIAL

-

-

256MB

533MT/s

DDR2 SDRAM

267MHz

64b

3-STATE

64

0.028A

533MHz

COMMON

8192

No

ROHS3 Compliant

-

-

-

-

-

32MX64

2147483648 bit

-

-

-

NO

Bulk

1.36mA

0.5 ns

30mm

Lead Free

MT4HTF3264HZ-667G1 vs MT4HTF3264HY-53ED3