Micron Technology Inc. MT4HTF3264HY-53ED3

Name: MT4HTF3264HY-53ED3
Brand: Micron Technology Inc.
SKU: 3863354-MT4HTF3264HY-53ED3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: MT4HTF3264HY-53ED3

Manufacturer:: Micron Technology Inc.

Ventron No:: 3863354-MT4HTF3264HY-53ED3

Description:: MOD DDR2 SDRAM 256MB 200SODIMM

ECAD Model:

Datasheet:: MT4HTF3264HY-53ED3

Specifications

Micron Technology Inc. MT4HTF3264HY-53ED3 technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT4HTF3264HY-53ED3.

Package / Case
200-SODIMM
Surface Mount
NO
Number of Pins
200
Packaging
Bulk
Published
2004
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
200
Max Operating Temperature
70°C
Min Operating Temperature
0°C
Subcategory
DRAMs
Technology
CMOS
Terminal Position
DUAL
Supply Voltage
1.8V
Terminal Pitch
0.6mm
Operating Supply Voltage
1.8V
Temperature Grade
COMMERCIAL
Memory Size
256MB
Speed
533MT/s
Memory Type
DDR2 SDRAM
Clock Frequency
267MHz
Supply Current-Max
1.36mA
Data Bus Width
64b
Organization
32MX64
Output Characteristics
3-STATE
Memory Width
64
Standby Current-Max
0.028A
Memory Density
2147483648 bit
Max Frequency
533MHz
Access Time (Max)
0.5 ns
I/O Type
COMMON
Refresh Cycles
8192
Height
30mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

Images are for reference only.See Product Specifications for product details.If you are interested to buy MT4HTF3264HY-53ED3.

MT4HTF3264HY-53ED3 More Descriptions

256MB 32MEG x 64 DDR2 SDRAM MODULE PBF SODIMM 1.8V
DRAM Module DDR2 SDRAM 256MByte 200SODIMM Tray
MODUL DDR2 SDRAM 256MB 200SODIMM

Product Comparison

The three parts on the right have similar specifications to MT4HTF3264HY-53ED3.

Image

Part Number

Manufacturer

Package / Case

Surface Mount

Number of Pins

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Max Operating Temperature

Min Operating Temperature

Subcategory

Technology

Terminal Position

Supply Voltage

Terminal Pitch

Operating Supply Voltage

Temperature Grade

Memory Size

Speed

Memory Type

Clock Frequency

Supply Current-Max

Data Bus Width

Organization

Output Characteristics

Memory Width

Standby Current-Max

Memory Density

Max Frequency

Access Time (Max)

I/O Type

Refresh Cycles

Height

Radiation Hardening

RoHS Status

Lead Free

Mount

JESD-609 Code

Pbfree Code

Terminal Finish

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Number of Elements

Max Supply Voltage

Min Supply Voltage

Reach Compliance Code

View Compare
MT4HTF3264HY-53ED3

Micron Technology Inc.

200-SODIMM

NO

200

Bulk

2004

Obsolete

1 (Unlimited)

200

70°C

0°C

DRAMs

CMOS

DUAL

1.8V

0.6mm

1.8V

COMMERCIAL

256MB

533MT/s

DDR2 SDRAM

267MHz

1.36mA

64b

32MX64

3-STATE

64

0.028A

2147483648 bit

533MHz

0.5 ns

COMMON

8192

30mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-
MT4HTF3264AY-667B2

Micron Technology Inc.

240-UDIMM

-

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

256MB

667MT/s

DDR2 SDRAM

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

MT4HTF3264HY-53ED3 vs MT4HTF3264AY-667B2
MT4HTF3264HZ-667G1

Micron Technology Inc.

200-SODIMM

-

200

-

2010

Obsolete

3 (168 Hours)

200

70°C

0°C

DRAMs

CMOS

DUAL

1.8V

0.6mm

1.8V

COMMERCIAL

256MB

667MT/s

DDR2 SDRAM

333MHz

-

64b

-

3-STATE

64

0.028A

-

667MHz

-

COMMON

8192

-

No

ROHS3 Compliant

-

Socket

e3

yes

MATTE TIN

260

30

4

1.9V

1.7V

-

MT4HTF3264HY-53ED3 vs MT4HTF3264HZ-667G1
MT4HTF1664AY-667B1

Micron Technology Inc.

240-UDIMM

-

240

Bulk

2010

Discontinued

1 (Unlimited)

-

85°C

0°C

-

-

-

-

-

1.8V

-

128MB

667MT/s

DDR2 SDRAM

-

-

64b

-

-

-

-

-

667MHz

-

-

-

30mm

-

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

unknown

MT4HTF3264HY-53ED3 vs MT4HTF1664AY-667B1