Micron Technology Inc. MT46V32M8P-5B IT:K
- Part Number:
- MT46V32M8P-5B IT:K
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3243137-MT46V32M8P-5B IT:K
- Description:
- IC SDRAM 256MBIT 200MHZ 66TSOP
- Datasheet:
- MT46V32M8P-5B IT:K
Micron Technology Inc. MT46V32M8P-5B IT:K technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT46V32M8P-5B IT:K.
- Mounting TypeSurface Mount
- Package / Case66-TSSOP (0.400, 10.16mm Width)
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Published2009
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations66
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- Additional FeatureAUTO/SELF REFRESH
- HTS Code8542.32.00.24
- TechnologySDRAM - DDR
- Voltage - Supply2.5V~2.7V
- Terminal PositionDUAL
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage2.6V
- Terminal Pitch0.65mm
- Time@Peak Reflow Temperature-Max (s)30
- Base Part NumberMT46V32M8
- Pin Count66
- JESD-30 CodeR-PDSO-G66
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)2.7V
- Power Supplies2.6V
- Supply Voltage-Min (Vsup)2.5V
- Memory Size256Mb 32M x 8
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency200MHz
- Supply Current-Max0.29mA
- Access Time700ps
- Memory FormatDRAM
- Memory InterfaceParallel
- Organization32MX8
- Output Characteristics3-STATE
- Memory Width8
- Write Cycle Time - Word, Page15ns
- Standby Current-Max0.004A
- Memory Density268435456 bit
- I/O TypeCOMMON
- Refresh Cycles8192
- Sequential Burst Length248
- Interleaved Burst Length248
- Height Seated (Max)1.2mm
- Length22.22mm
- Width10.16mm
- RoHS StatusROHS3 Compliant
MT46V32M8P-5B IT:K Overview
The Pbfree Code for this particular technology is yes, indicating that it is free from lead and therefore environmentally friendly. The HTS Code, 8542.32.00.24, further specifies the type of technology being used. In this case, it is SDRAM - DDR, a type of dynamic random-access memory that uses double data rate. The Terminal Position for this technology is DUAL, meaning that it has two sets of input/output pins. The Supply Voltage required for this technology is 2.6V, which is the amount of electrical potential needed for it to function properly. The JESD-30 Code, R-PDSO-G66, describes the package type and size of the technology. It has 1 port, indicating that it can handle data from one source at a time. The Clock Frequency for this technology is 200MHz, meaning that it can process data at a rate of 200 million cycles per second. It also has a Refresh Cycle of 8192, which is the number of times the data is refreshed per second to maintain its accuracy. Lastly, this technology is ROHS3 Compliant, meaning that it meets the Restriction of Hazardous Substances Directive and is safe for use.
MT46V32M8P-5B IT:K Features
Package / Case: 66-TSSOP (0.400, 10.16mm Width)
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
MT46V32M8P-5B IT:K Applications
There are a lot of Micron Technology Inc.
MT46V32M8P-5B IT:K Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
The Pbfree Code for this particular technology is yes, indicating that it is free from lead and therefore environmentally friendly. The HTS Code, 8542.32.00.24, further specifies the type of technology being used. In this case, it is SDRAM - DDR, a type of dynamic random-access memory that uses double data rate. The Terminal Position for this technology is DUAL, meaning that it has two sets of input/output pins. The Supply Voltage required for this technology is 2.6V, which is the amount of electrical potential needed for it to function properly. The JESD-30 Code, R-PDSO-G66, describes the package type and size of the technology. It has 1 port, indicating that it can handle data from one source at a time. The Clock Frequency for this technology is 200MHz, meaning that it can process data at a rate of 200 million cycles per second. It also has a Refresh Cycle of 8192, which is the number of times the data is refreshed per second to maintain its accuracy. Lastly, this technology is ROHS3 Compliant, meaning that it meets the Restriction of Hazardous Substances Directive and is safe for use.
MT46V32M8P-5B IT:K Features
Package / Case: 66-TSSOP (0.400, 10.16mm Width)
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
MT46V32M8P-5B IT:K Applications
There are a lot of Micron Technology Inc.
MT46V32M8P-5B IT:K Memory applications.
eSRAM
mainframes
multimedia computers
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
MT46V32M8P-5B IT:K More Descriptions
DRAM Chip DDR SDRAM 256M-Bit 32Mx8 2.6V 66-Pin TSOP Tray
IC DDR SDRAM 256MBIT 5NS 66TSOP
IC DRAM 256M PARALLEL 66TSOP
IC FLASH 8M PARALLEL 48TFBGA
IC DDR SDRAM 256MBIT 5NS 66TSOP
IC DRAM 256M PARALLEL 66TSOP
IC FLASH 8M PARALLEL 48TFBGA
The three parts on the right have similar specifications to MT46V32M8P-5B IT:K.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencySupply Current-MaxAccess TimeMemory FormatMemory InterfaceOrganizationOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageStandby Current-MaxMemory DensityI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthHeight Seated (Max)LengthWidthRoHS StatusFactory Lead TimeReach Compliance CodeSupplier Device PackageView Compare
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MT46V32M8P-5B IT:KSurface Mount66-TSSOP (0.400, 10.16mm Width)YES-40°C~85°C TATray2009e3yesDiscontinued3 (168 Hours)66EAR99MATTE TINAUTO/SELF REFRESH8542.32.00.24SDRAM - DDR2.5V~2.7VDUAL26012.6V0.65mm30MT46V32M866R-PDSO-G66Not Qualified2.7V2.6V2.5V256Mb 32M x 81VolatileSYNCHRONOUS200MHz0.29mA700psDRAMParallel32MX83-STATE815ns0.004A268435456 bitCOMMON81922482481.2mm22.22mm10.16mmROHS3 Compliant----
-
Surface Mount60-VFBGAYES-40°C~105°C TATray2008--Obsolete3 (168 Hours)60EAR99-AUTO/SELF REFRESH8542.32.00.24SDRAM - Mobile LPDDR1.7V~1.95VBOTTOM-11.8V0.8mm-MT46H16M1660R-PBGA-B60Not Qualified1.95V1.8V1.7V256Mb 16M x 161VolatileSYNCHRONOUS166MHz0.085mA5nsDRAMParallel16MX163-STATE1612ns0.00001A268435456 bitCOMMON81922481624816---ROHS3 Compliant---
-
Surface Mount60-VFBGAYES-40°C~105°C TATray2015e1-Obsolete-60EAR99Tin/Silver/Copper (Sn/Ag/Cu)AUTO/SELF REFRESH8542.32.00.32SDRAM - Mobile LPDDR1.7V~1.95VBOTTOM-11.8V0.8mm--60R-PBGA-B60-1.95V1.8V1.7V1Gb 64M x 161VolatileSYNCHRONOUS200MHz0.135mA5nsDRAMParallel64MX163-STATE1615ns0.000015A1073741824 bitCOMMON819224816248161mm9mm8mmRoHS Compliant4 Weekscompliant-
-
Surface Mount-YES-40°C~85°C TATray2015--Obsolete3 (168 Hours)168--AUTO/SELF REFRESH-SDRAM - Mobile LPDDR1.7V~1.95VBOTTOM-11.8V0.5mm---S-PBGA-B168-1.95V-1.7V2Gb 64M x 321VolatileSYNCHRONOUS167MHz-5nsDRAMParallel64MX32-3215ns-2147483648 bit----0.75mm12mm12mmROHS3 Compliant12 Weeks-168-WFBGA (12x12)
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