Micron Technology Inc. MT46H32M16LFBF-5 IT:C
- Part Number:
- MT46H32M16LFBF-5 IT:C
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3717442-MT46H32M16LFBF-5 IT:C
- Description:
- IC SDRAM 512MBIT 200MHZ 60BGA
- Datasheet:
- 512Mb: x16, x32 Mobile LPDDR SDRAM
Micron Technology Inc. MT46H32M16LFBF-5 IT:C technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT46H32M16LFBF-5 IT:C.
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case60-VFBGA
- Surface MountYES
- Operating Temperature-40°C~85°C TA
- PackagingTray
- Published2012
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- Number of Terminations60
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Additional FeatureAUTO/SELF REFRESH
- HTS Code8542.32.00.28
- TechnologySDRAM - Mobile LPDDR
- Voltage - Supply1.7V~1.95V
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Number of Functions1
- Supply Voltage1.8V
- Terminal Pitch0.8mm
- Reflow Temperature-Max (s)30
- Base Part NumberMT46H32M16
- Pin Count60
- JESD-30 CodeR-PBGA-B60
- Qualification StatusNot Qualified
- Supply Voltage-Max (Vsup)1.95V
- Power Supplies1.8V
- Supply Voltage-Min (Vsup)1.7V
- Memory Size512Mb 32M x 16
- Number of Ports1
- Memory TypeVolatile
- Operating ModeSYNCHRONOUS
- Clock Frequency200MHz
- Supply Current-Max0.115mA
- Access Time5ns
- Memory FormatDRAM
- Memory InterfaceParallel
- Organization32MX16
- Output Characteristics3-STATE
- Memory Width16
- Write Cycle Time - Word, Page15ns
- Standby Current-Max0.00001A
- Memory Density536870912 bit
- I/O TypeCOMMON
- Refresh Cycles8192
- Sequential Burst Length24816
- Interleaved Burst Length24816
- Height Seated (Max)1mm
- Length9mm
- Width8mm
- RoHS StatusROHS3 Compliant
MT46H32M16LFBF-5 IT:C Overview
The product being offered is a high-quality memory chip with a published date of 2012. It has an operating temperature range of -40°C to 85°C, making it suitable for use in extreme environments. The chip has 60 terminations and requires a voltage supply of 1.7V to 1.95V. Its terminal position is at the bottom, providing ease of installation. With an access time of 5ns, it offers fast and efficient data retrieval. The organization of the chip is 32MX16, providing a total capacity of 32 megabits. It has a low standby current of 0.00001A, ensuring energy efficiency. The chip has a width of 8mm and is compliant with ROHS3 standards. Overall, this product is a reliable and efficient choice for various memory applications.
MT46H32M16LFBF-5 IT:C Features
Package / Case: 60-VFBGA
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
MT46H32M16LFBF-5 IT:C Applications
There are a lot of Micron Technology Inc. MT46H32M16LFBF-5 IT:C Memory applications.
multimedia computers
graphics card
personal computers
cell phones
data buffer
personal digital assistants
telecommunications
mainframes
hard disk drive (HDD)
eDRAM
The product being offered is a high-quality memory chip with a published date of 2012. It has an operating temperature range of -40°C to 85°C, making it suitable for use in extreme environments. The chip has 60 terminations and requires a voltage supply of 1.7V to 1.95V. Its terminal position is at the bottom, providing ease of installation. With an access time of 5ns, it offers fast and efficient data retrieval. The organization of the chip is 32MX16, providing a total capacity of 32 megabits. It has a low standby current of 0.00001A, ensuring energy efficiency. The chip has a width of 8mm and is compliant with ROHS3 standards. Overall, this product is a reliable and efficient choice for various memory applications.
MT46H32M16LFBF-5 IT:C Features
Package / Case: 60-VFBGA
Additional Feature:AUTO/SELF REFRESH
I/O Type: COMMON
MT46H32M16LFBF-5 IT:C Applications
There are a lot of Micron Technology Inc. MT46H32M16LFBF-5 IT:C Memory applications.
multimedia computers
graphics card
personal computers
cell phones
data buffer
personal digital assistants
telecommunications
mainframes
hard disk drive (HDD)
eDRAM
MT46H32M16LFBF-5 IT:C More Descriptions
DRAM Chip Mobile LPDDR SDRAM 512M-Bit 32Mx16 1.8V 60-Pin VFBGA Tray
DRAM, 32M X 16BIT, -40 TO 85DEG C; DRAM Type:Mobile LPDDR; Memory Configuration:32M x 16bit; Clock Frequency Max:200MHz; IC Case / Package:VFBGA; No. of Pins:60Pins; Supply Voltage Nom:1.8V; IC Mounting:Surface Mount; Product Range:-RoHS Compliant: Yes
SDRAM, 32M X 16BIT, -40 TO 85DEG C; DRAM Memory Configuration: 32M x 16bit; Memory Case Style: VFBGA; No. of Pins: 60Pins; IC Interface Type: Parallel; Access Time: 5ns; Page Size: -; Operating Temperature Min: -40°C; Operating Temperature Max: 85°C; Product Range: -; SVHC: No SVHC (27-Jun-2018)
DRAM, 32M X 16BIT, -40 TO 85DEG C; DRAM Type:Mobile LPDDR; Memory Configuration:32M x 16bit; Clock Frequency Max:200MHz; IC Case / Package:VFBGA; No. of Pins:60Pins; Supply Voltage Nom:1.8V; IC Mounting:Surface Mount; Product Range:-RoHS Compliant: Yes
SDRAM, 32M X 16BIT, -40 TO 85DEG C; DRAM Memory Configuration: 32M x 16bit; Memory Case Style: VFBGA; No. of Pins: 60Pins; IC Interface Type: Parallel; Access Time: 5ns; Page Size: -; Operating Temperature Min: -40°C; Operating Temperature Max: 85°C; Product Range: -; SVHC: No SVHC (27-Jun-2018)
The three parts on the right have similar specifications to MT46H32M16LFBF-5 IT:C.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTechnologyVoltage - SupplyTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusSupply Voltage-Max (Vsup)Power SuppliesSupply Voltage-Min (Vsup)Memory SizeNumber of PortsMemory TypeOperating ModeClock FrequencySupply Current-MaxAccess TimeMemory FormatMemory InterfaceOrganizationOutput CharacteristicsMemory WidthWrite Cycle Time - Word, PageStandby Current-MaxMemory DensityI/O TypeRefresh CyclesSequential Burst LengthInterleaved Burst LengthHeight Seated (Max)LengthWidthRoHS StatusMountNumber of PinsReach Compliance CodeTime@Peak Reflow Temperature-Max (s)Operating Supply VoltageNominal Supply CurrentAddress Bus WidthDensityLead FreeView Compare
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MT46H32M16LFBF-5 IT:C8 WeeksSurface Mount60-VFBGAYES-40°C~85°C TATray2012e1yesActive3 (168 Hours)60EAR99Tin/Silver/Copper (Sn/Ag/Cu)AUTO/SELF REFRESH8542.32.00.28SDRAM - Mobile LPDDR1.7V~1.95VBOTTOM26011.8V0.8mm30MT46H32M1660R-PBGA-B60Not Qualified1.95V1.8V1.7V512Mb 32M x 161VolatileSYNCHRONOUS200MHz0.115mA5nsDRAMParallel32MX163-STATE1615ns0.00001A536870912 bitCOMMON819224816248161mm9mm8mmROHS3 Compliant----------
-
-Surface Mount60-VFBGA--40°C~85°C TATape & Reel (TR)2009--Obsolete3 (168 Hours)-----SDRAM - Mobile LPDDR1.7V~1.95V------MT46H32M16------512Mb 32M x 16-Volatile-200MHz-5nsDRAMParallel---15ns---------ROHS3 Compliant---------
-
-Surface Mount90-VFBGA-0°C~70°C TATray2009-yesObsolete3 (168 Hours)90EAR99-AUTO/SELF REFRESH8542.32.00.28SDRAM - Mobile LPDDR1.7V~1.95VBOTTOMNOT SPECIFIED11.8V0.8mm-MT46H16M3290-Not Qualified1.95V-1.7V512Mb 16M x 321VolatileSYNCHRONOUS166MHz-5nsDRAMParallel16MX323-STATE3215ns0.00001A-COMMON819224816248161mm13mm-ROHS3 CompliantSurface Mount90unknownNOT SPECIFIED1.8V115mA15b512 MbLead Free
-
4 WeeksSurface Mount60-VFBGAYES-40°C~105°C TATray-e1-Active-60EAR99TIN SILVER COPPERAUTO/SELF REFRESH8542.32.00.28SDRAM - Mobile LPDDR1.7V~1.95VBOTTOM-11.8V0.8mm--60R-PBGA-B60Not Qualified1.95V1.8V1.7V512Mb 32M x 161VolatileSYNCHRONOUS166MHz0.105mA5nsDRAMParallel32MX163-STATE1615ns0.000015A536870912 bitCOMMON819224816248161mm9mm8mmRoHS Compliant--compliant------
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