MT29F256G08CBHBBJ4-3R:B TR

Micron Technology Inc. MT29F256G08CBHBBJ4-3R:B TR

Part Number:
MT29F256G08CBHBBJ4-3R:B TR
Manufacturer:
Micron Technology Inc.
Ventron No:
3836427-MT29F256G08CBHBBJ4-3R:B TR
Description:
IC FLASH 256GBIT 333MHZ 132VBGA
ECAD Model:
Datasheet:
MT29F256G08CBHBBJ4-3R:B TR

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Specifications
Micron Technology Inc. MT29F256G08CBHBBJ4-3R:B TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29F256G08CBHBBJ4-3R:B TR.
  • Operating Temperature
    0°C~70°C TA
  • Packaging
    Tape & Reel (TR)
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    3 (168 Hours)
  • Technology
    FLASH - NAND
  • Voltage - Supply
    2.5V~3.6V
  • Memory Size
    256Gb 32G x 8
  • Memory Type
    Non-Volatile
  • Clock Frequency
    333MHz
  • Memory Format
    FLASH
  • Memory Interface
    Parallel
  • RoHS Status
    ROHS3 Compliant
Description
MT29F256G08CBHBBJ4-3R:B TR Overview
In this case, the memory type of the device can be classified as Non-Volatile. Case Tape & Reel (TR) is available. It is estimated that the memory size on the chip is 256Gb 32G x 8. As with most mainstream devices, this one uses FLASH-format memory. Due to its wide temperature range of 0°C~70°C TA, this device is well suited to a wide range of applications that require high performance. With 2.5V~3.6V as the supply voltage, it is capable of handling memory ics. In order to operate effectively, the memory rotates at a clock frequency within a range of 333MHz.

MT29F256G08CBHBBJ4-3R:B TR Features
This product has an operating temperature range of 0°C to 70°C and is packaged in Tape & Reel (TR) format. It is currently not recommended for new designs. The Moisture Sensitivity Level (MSL) is 3, meaning it can be exposed to ambient air for up to 168 hours without any adverse effects. The technology used in this product is FLASH - NAND, and it requires a voltage supply of 2.5V to 3.6V. It is a non-volatile memory type, meaning it retains data even when power is turned off. It has a clock frequency of 333MHz and a parallel memory interface. This product is also compliant with ROHS3 regulations.

MT29F256G08CBHBBJ4-3R:B TR Applications
There are a lot of Micron Technology Inc.
MT29F256G08CBHBBJ4-3R:B TR Memory applications.


networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
MT29F256G08CBHBBJ4-3R:B TR More Descriptions
IC FLASH 256GBIT PAR 132VBGA
IC FLASH 256G PARALLEL 333MHZ
IC EEPROM 1M I2C 1MHZ 8SO
Product Comparison
The three parts on the right have similar specifications to MT29F256G08CBHBBJ4-3R:B TR.
  • Image
    Part Number
    Manufacturer
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Technology
    Voltage - Supply
    Memory Size
    Memory Type
    Clock Frequency
    Memory Format
    Memory Interface
    RoHS Status
    Mounting Type
    Package / Case
    Series
    Factory Lead Time
    Surface Mount
    Number of Terminations
    Additional Feature
    Terminal Position
    Peak Reflow Temperature (Cel)
    Number of Functions
    Supply Voltage
    Terminal Pitch
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Supply Voltage-Max (Vsup)
    Supply Voltage-Min (Vsup)
    Operating Mode
    Organization
    Memory Width
    Memory Density
    Height Seated (Max)
    Length
    Width
    View Compare
  • MT29F256G08CBHBBJ4-3R:B TR
    MT29F256G08CBHBBJ4-3R:B TR
    0°C~70°C TA
    Tape & Reel (TR)
    Not For New Designs
    3 (168 Hours)
    FLASH - NAND
    2.5V~3.6V
    256Gb 32G x 8
    Non-Volatile
    333MHz
    FLASH
    Parallel
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MT29AZ5A3CHHWD-18AAT.84F TR
    -40°C~105°C TA
    Tape & Reel (TR)
    Last Time Buy
    3 (168 Hours)
    FLASH - NAND, Mobile LPDRAM
    1.7V~1.9V
    4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2
    Non-Volatile
    533MHz
    FLASH, RAM
    Parallel
    ROHS3 Compliant
    Surface Mount
    162-VFBGA
    Automotive, AEC-Q100
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • MT29C1G12MAAIYAMR-5 AIT
    -40°C~85°C TA
    Tray
    Active
    -
    FLASH - NAND, Mobile LPDRAM
    1.7V~1.95V
    1Gb 128M x 8 N 512M 16M x 32 LPDRAM
    Non-Volatile
    200MHz
    FLASH, RAM
    Parallel
    RoHS Compliant
    Surface Mount
    130-VFBGA
    -
    16 Weeks
    YES
    130
    LPDRAM IS ORGANISED AS 32M X 16
    BOTTOM
    NOT SPECIFIED
    1
    1.8V
    0.65mm
    compliant
    NOT SPECIFIED
    R-PBGA-B130
    1.95V
    1.7V
    SYNCHRONOUS
    128MX8
    8
    1073741824 bit
    1mm
    9mm
    8mm
  • MT29AZ5A3CHHWD-18AIT.84F
    -40°C~85°C TA
    Tray
    Last Time Buy
    3 (168 Hours)
    FLASH - NAND, Mobile LPDRAM
    1.7V~1.9V
    4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2
    Non-Volatile
    533MHz
    FLASH, RAM
    Parallel
    -
    Surface Mount
    162-VFBGA
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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