Micron Technology Inc. MT29F256G08CBHBBJ4-3R:B TR
- Part Number:
- MT29F256G08CBHBBJ4-3R:B TR
- Manufacturer:
- Micron Technology Inc.
- Ventron No:
- 3836427-MT29F256G08CBHBBJ4-3R:B TR
- Description:
- IC FLASH 256GBIT 333MHZ 132VBGA
- Datasheet:
- MT29F256G08CBHBBJ4-3R:B TR
Micron Technology Inc. MT29F256G08CBHBBJ4-3R:B TR technical specifications, attributes, parameters and parts with similar specifications to Micron Technology Inc. MT29F256G08CBHBBJ4-3R:B TR.
- Operating Temperature0°C~70°C TA
- PackagingTape & Reel (TR)
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologyFLASH - NAND
- Voltage - Supply2.5V~3.6V
- Memory Size256Gb 32G x 8
- Memory TypeNon-Volatile
- Clock Frequency333MHz
- Memory FormatFLASH
- Memory InterfaceParallel
- RoHS StatusROHS3 Compliant
MT29F256G08CBHBBJ4-3R:B TR Overview
In this case, the memory type of the device can be classified as Non-Volatile. Case Tape & Reel (TR) is available. It is estimated that the memory size on the chip is 256Gb 32G x 8. As with most mainstream devices, this one uses FLASH-format memory. Due to its wide temperature range of 0°C~70°C TA, this device is well suited to a wide range of applications that require high performance. With 2.5V~3.6V as the supply voltage, it is capable of handling memory ics. In order to operate effectively, the memory rotates at a clock frequency within a range of 333MHz.
MT29F256G08CBHBBJ4-3R:B TR Features
This product has an operating temperature range of 0°C to 70°C and is packaged in Tape & Reel (TR) format. It is currently not recommended for new designs. The Moisture Sensitivity Level (MSL) is 3, meaning it can be exposed to ambient air for up to 168 hours without any adverse effects. The technology used in this product is FLASH - NAND, and it requires a voltage supply of 2.5V to 3.6V. It is a non-volatile memory type, meaning it retains data even when power is turned off. It has a clock frequency of 333MHz and a parallel memory interface. This product is also compliant with ROHS3 regulations.
MT29F256G08CBHBBJ4-3R:B TR Applications
There are a lot of Micron Technology Inc.
MT29F256G08CBHBBJ4-3R:B TR Memory applications.
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
In this case, the memory type of the device can be classified as Non-Volatile. Case Tape & Reel (TR) is available. It is estimated that the memory size on the chip is 256Gb 32G x 8. As with most mainstream devices, this one uses FLASH-format memory. Due to its wide temperature range of 0°C~70°C TA, this device is well suited to a wide range of applications that require high performance. With 2.5V~3.6V as the supply voltage, it is capable of handling memory ics. In order to operate effectively, the memory rotates at a clock frequency within a range of 333MHz.
MT29F256G08CBHBBJ4-3R:B TR Features
This product has an operating temperature range of 0°C to 70°C and is packaged in Tape & Reel (TR) format. It is currently not recommended for new designs. The Moisture Sensitivity Level (MSL) is 3, meaning it can be exposed to ambient air for up to 168 hours without any adverse effects. The technology used in this product is FLASH - NAND, and it requires a voltage supply of 2.5V to 3.6V. It is a non-volatile memory type, meaning it retains data even when power is turned off. It has a clock frequency of 333MHz and a parallel memory interface. This product is also compliant with ROHS3 regulations.
MT29F256G08CBHBBJ4-3R:B TR Applications
There are a lot of Micron Technology Inc.
MT29F256G08CBHBBJ4-3R:B TR Memory applications.
networking
personal computers
servers
supercomputers
telecommunications
workstations,
DVD disk buffer
data buffer
nonvolatile BIOS memory
Camcorders
MT29F256G08CBHBBJ4-3R:B TR More Descriptions
IC FLASH 256GBIT PAR 132VBGA
IC FLASH 256G PARALLEL 333MHZ
IC EEPROM 1M I2C 1MHZ 8SO
IC FLASH 256G PARALLEL 333MHZ
IC EEPROM 1M I2C 1MHZ 8SO
The three parts on the right have similar specifications to MT29F256G08CBHBBJ4-3R:B TR.
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ImagePart NumberManufacturerOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)TechnologyVoltage - SupplyMemory SizeMemory TypeClock FrequencyMemory FormatMemory InterfaceRoHS StatusMounting TypePackage / CaseSeriesFactory Lead TimeSurface MountNumber of TerminationsAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Number of FunctionsSupply VoltageTerminal PitchReach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeSupply Voltage-Max (Vsup)Supply Voltage-Min (Vsup)Operating ModeOrganizationMemory WidthMemory DensityHeight Seated (Max)LengthWidthView Compare
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MT29F256G08CBHBBJ4-3R:B TR0°C~70°C TATape & Reel (TR)Not For New Designs3 (168 Hours)FLASH - NAND2.5V~3.6V256Gb 32G x 8Non-Volatile333MHzFLASHParallelROHS3 Compliant-------------------------
-
-40°C~105°C TATape & Reel (TR)Last Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 8Gb 512M x 16 LPDDR2Non-Volatile533MHzFLASH, RAMParallelROHS3 CompliantSurface Mount162-VFBGAAutomotive, AEC-Q100---------------------
-
-40°C~85°C TATrayActive-FLASH - NAND, Mobile LPDRAM1.7V~1.95V1Gb 128M x 8 N 512M 16M x 32 LPDRAMNon-Volatile200MHzFLASH, RAMParallelRoHS CompliantSurface Mount130-VFBGA-16 WeeksYES130LPDRAM IS ORGANISED AS 32M X 16BOTTOMNOT SPECIFIED11.8V0.65mmcompliantNOT SPECIFIEDR-PBGA-B1301.95V1.7VSYNCHRONOUS128MX881073741824 bit1mm9mm8mm
-
-40°C~85°C TATrayLast Time Buy3 (168 Hours)FLASH - NAND, Mobile LPDRAM1.7V~1.9V4Gb 512M x 8 N 2Gb 128M x 16 LPDDR2Non-Volatile533MHzFLASH, RAMParallel-Surface Mount162-VFBGA----------------------
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